@inproceedings{9c566556ce9e46dc8cb2a632a791b111,
title = "A 1-Watt 38 GHz Power Amplifier Using 0.1-μm GaAs p-HEMT Technology",
abstract = "The paper presents a 38 GHz power amplifier using 0.1-μm D-mode GaAs pseudomorphic high electron mobility transistor (p-HEMT) technology for the fifth generation (5G) mobile communications. Utilizing four-way direct shunt power combining and low impedance transmission line pre-matching techniques, the measured saturation output power of the PA is 30.2 dBm and the output 1-dB gain compression point (OP1dB) is 29.4 dBm at 38 GHz. The measured peak power added efficiency (PAE) is 23.4 % and the PAE at OP1dB is 20.8 %. The small signal gain is 18.4 dB at 38 GHz and the chip size is 2.9 × 1.8mm2.",
keywords = "GaAs, mm-Wave, power amplifier",
author = "Tsai, {Jeng Han} and Wei, {Geng Sheng} and Lin, {Yu Zhe}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 ; Conference date: 25-08-2021 Through 27-08-2021",
year = "2021",
month = aug,
day = "25",
doi = "10.1109/RFIT52905.2021.9565248",
language = "English",
series = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
}