A 1-V operated polymer vertical transistor with high on/off current ratio

Yu Chiang Chao; Wu Wei Tsai; Chun Yu Chen; Hsiao Wen Zan; Hsin Fei Meng

doi:10.1109/IEDM.2009.5424347

A 1-V operated polymer vertical transistor with high on/off current ratio

Yu Chiang Chao^*, Wu Wei Tsai, Chun Yu Chen, Hsiao Wen Zan, Hsin Fei Meng

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×10⁴ is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	15.2.1-15.2.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424347
Publication status	Published - 2009
Externally published	Yes
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 2009 Dec 7 → 2009 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	2009/12/07 → 2009/12/09

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2009.5424347

Cite this

Chao, Y. C., Tsai, W. W., Chen, C. Y., Zan, H. W., & Meng, H. F. (2009). A 1-V operated polymer vertical transistor with high on/off current ratio. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 15.2.1-15.2.4). Article 5424347 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424347

A 1-V operated polymer vertical transistor with high on/off current ratio. / Chao, Yu Chiang; Tsai, Wu Wei; Chen, Chun Yu et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 15.2.1-15.2.4 5424347 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chao, YC, Tsai, WW, Chen, CY, Zan, HW & Meng, HF 2009, A 1-V operated polymer vertical transistor with high on/off current ratio. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424347, Technical Digest - International Electron Devices Meeting, IEDM, pp. 15.2.1-15.2.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 2009/12/07. https://doi.org/10.1109/IEDM.2009.5424347

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abstract = "A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.",

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A 1-V operated polymer vertical transistor with high on/off current ratio

Abstract

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ASJC Scopus subject areas

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