A 1-V operated polymer vertical transistor with high on/off current ratio

Yu Chiang Chao, Wu Wei Tsai, Chun Yu Chen, Hsiao Wen Zan, Hsin Fei Meng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages15.2.1-15.2.4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period09/12/709/12/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Chao, Y. C., Tsai, W. W., Chen, C. Y., Zan, H. W., & Meng, H. F. (2009). A 1-V operated polymer vertical transistor with high on/off current ratio. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 15.2.1-15.2.4). [5424347] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424347