TY - JOUR
T1 - A 1-V 10.7-MHz fourth-order bandpass ΔΣ modulators using two switched opamps
AU - Kuo, Chien Hung
AU - Liu, Shen Iuan
N1 - Funding Information:
Manuscript received January 14, 2004; revised July 6, 2004. This work was supported by the National Science Council, Taiwan. The authors are with the Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 10617, R.O.C. (e-mail: [email protected]). Digital Object Identifier 10.1109/JSSC.2004.835792
PY - 2004/11
Y1 - 2004/11
N2 - A 1-V 10.7-MHz fourth-order bandpass delta-sigma modulator using two switched opamps (SOPs) is presented. The 3/4 sampling frequency and the double-sampling techniques are adapted for this modulator to relax the required clocking rate. The presented modulator can not only reduce the number of SOPs, but also the number of capacitors. It has been implemented in 0.25-μm 1P5M CMOS process with MIM capacitors. The modulator can receive 10.7-MHz IF signals by using a clock frequency of 7.13 MHz. A dynamic range of 62 dB within bandwidth of 200 kHz is achieved and the power consumption of 8.45 mW is measured at 1-V supply voltage. The image tone can be suppressed by 44 dB with respect to the carrier. The in-band third-order intermodulation (IM3) distortion is -65 dBc below the desired signal.
AB - A 1-V 10.7-MHz fourth-order bandpass delta-sigma modulator using two switched opamps (SOPs) is presented. The 3/4 sampling frequency and the double-sampling techniques are adapted for this modulator to relax the required clocking rate. The presented modulator can not only reduce the number of SOPs, but also the number of capacitors. It has been implemented in 0.25-μm 1P5M CMOS process with MIM capacitors. The modulator can receive 10.7-MHz IF signals by using a clock frequency of 7.13 MHz. A dynamic range of 62 dB within bandwidth of 200 kHz is achieved and the power consumption of 8.45 mW is measured at 1-V supply voltage. The image tone can be suppressed by 44 dB with respect to the carrier. The in-band third-order intermodulation (IM3) distortion is -65 dBc below the desired signal.
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U2 - 10.1109/JSSC.2004.835792
DO - 10.1109/JSSC.2004.835792
M3 - Article
AN - SCOPUS:8344252825
SN - 0018-9200
VL - 39
SP - 2041
EP - 2045
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 11
ER -