A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process

Wei Heng Lin, Jeng Han Tsai, Yung Nien Jen, Tian Wei Huang, Huei Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

A low voltage and low power 60 GHz low noise amplifier (LNA) using 90 nm standard MS/RF CMOS technology is presented in this paper. For the low voltage applications, a three-stage common source configuration is utilized. By using forward-body-bias, our LNA can operate at 0.7 V supply voltage and consumes 4.9 mW dc power while maintaining a peak gain of 13 dB at 55 GHz and 12.6 dB at 60 GHz with a compact chip size of 0.351 mm2. The 1-dB gain bandwidth is 54.5 to 61.0 GHz and the minimum noise figure is 6.3 dB at 64 GHz. This MMIC successfully demonstrates the forward-body-biased LNA in millimeter-wave frequency region with the lowest supply-voltage among the published LNAs around 60 GHz.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2009, EuMW 2009
Subtitle of host publicationScience, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009
Pages393-396
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
EventEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009 - Rome, Italy
Duration: 2009 Sep 282009 Oct 2

Other

OtherEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009
CountryItaly
CityRome
Period09/9/2809/10/2

Fingerprint

Low noise amplifiers
Power amplifiers
Electric potential
Monolithic microwave integrated circuits
Noise figure
Millimeter waves
Bandwidth

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lin, W. H., Tsai, J. H., Jen, Y. N., Huang, T. W., & Wang, H. (2009). A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009 (pp. 393-396). [5296384] https://doi.org/10.1109/EUMC.2009.5296384

A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process. / Lin, Wei Heng; Tsai, Jeng Han; Jen, Yung Nien; Huang, Tian Wei; Wang, Huei.

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009. 2009. p. 393-396 5296384.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, WH, Tsai, JH, Jen, YN, Huang, TW & Wang, H 2009, A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process. in European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009., 5296384, pp. 393-396, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009, Rome, Italy, 09/9/28. https://doi.org/10.1109/EUMC.2009.5296384
Lin WH, Tsai JH, Jen YN, Huang TW, Wang H. A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009. 2009. p. 393-396. 5296384 https://doi.org/10.1109/EUMC.2009.5296384
Lin, Wei Heng ; Tsai, Jeng Han ; Jen, Yung Nien ; Huang, Tian Wei ; Wang, Huei. / A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process. European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009. 2009. pp. 393-396
@inproceedings{2257cf5833f54463a1d2c3afc7dd8a1b,
title = "A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process",
abstract = "A low voltage and low power 60 GHz low noise amplifier (LNA) using 90 nm standard MS/RF CMOS technology is presented in this paper. For the low voltage applications, a three-stage common source configuration is utilized. By using forward-body-bias, our LNA can operate at 0.7 V supply voltage and consumes 4.9 mW dc power while maintaining a peak gain of 13 dB at 55 GHz and 12.6 dB at 60 GHz with a compact chip size of 0.351 mm2. The 1-dB gain bandwidth is 54.5 to 61.0 GHz and the minimum noise figure is 6.3 dB at 64 GHz. This MMIC successfully demonstrates the forward-body-biased LNA in millimeter-wave frequency region with the lowest supply-voltage among the published LNAs around 60 GHz.",
author = "Lin, {Wei Heng} and Tsai, {Jeng Han} and Jen, {Yung Nien} and Huang, {Tian Wei} and Huei Wang",
year = "2009",
month = "12",
day = "1",
doi = "10.1109/EUMC.2009.5296384",
language = "English",
isbn = "9782874870118",
pages = "393--396",
booktitle = "European Microwave Week 2009, EuMW 2009",

}

TY - GEN

T1 - A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process

AU - Lin, Wei Heng

AU - Tsai, Jeng Han

AU - Jen, Yung Nien

AU - Huang, Tian Wei

AU - Wang, Huei

PY - 2009/12/1

Y1 - 2009/12/1

N2 - A low voltage and low power 60 GHz low noise amplifier (LNA) using 90 nm standard MS/RF CMOS technology is presented in this paper. For the low voltage applications, a three-stage common source configuration is utilized. By using forward-body-bias, our LNA can operate at 0.7 V supply voltage and consumes 4.9 mW dc power while maintaining a peak gain of 13 dB at 55 GHz and 12.6 dB at 60 GHz with a compact chip size of 0.351 mm2. The 1-dB gain bandwidth is 54.5 to 61.0 GHz and the minimum noise figure is 6.3 dB at 64 GHz. This MMIC successfully demonstrates the forward-body-biased LNA in millimeter-wave frequency region with the lowest supply-voltage among the published LNAs around 60 GHz.

AB - A low voltage and low power 60 GHz low noise amplifier (LNA) using 90 nm standard MS/RF CMOS technology is presented in this paper. For the low voltage applications, a three-stage common source configuration is utilized. By using forward-body-bias, our LNA can operate at 0.7 V supply voltage and consumes 4.9 mW dc power while maintaining a peak gain of 13 dB at 55 GHz and 12.6 dB at 60 GHz with a compact chip size of 0.351 mm2. The 1-dB gain bandwidth is 54.5 to 61.0 GHz and the minimum noise figure is 6.3 dB at 64 GHz. This MMIC successfully demonstrates the forward-body-biased LNA in millimeter-wave frequency region with the lowest supply-voltage among the published LNAs around 60 GHz.

UR - http://www.scopus.com/inward/record.url?scp=72949113644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72949113644&partnerID=8YFLogxK

U2 - 10.1109/EUMC.2009.5296384

DO - 10.1109/EUMC.2009.5296384

M3 - Conference contribution

AN - SCOPUS:72949113644

SN - 9782874870118

SP - 393

EP - 396

BT - European Microwave Week 2009, EuMW 2009

ER -