A 0.6 v low-power 3.5-GHz CMOS low noise amplifier for WIMAX applications

Jeng Han Tsai; Yi Jhang Lin; Hao Chun Yu

doi:10.1002/mop.26463

A 0.6 v low-power 3.5-GHz CMOS low noise amplifier for WIMAX applications

Jeng Han Tsai^*, Yi Jhang Lin, Hao Chun Yu

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-μm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance.

Original language	English
Pages (from-to)	145-147
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	54
Issue number	1
DOIs	https://doi.org/10.1002/mop.26463
Publication status	Published - 2012 Jan

Keywords

CMOS
RF frontends
low noise amplifier
low-power
low-voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.26463

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abstract = "In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-μm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance.",

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T1 - A 0.6 v low-power 3.5-GHz CMOS low noise amplifier for WIMAX applications

AU - Tsai, Jeng Han

AU - Lin, Yi Jhang

AU - Yu, Hao Chun

PY - 2012/1

Y1 - 2012/1

N2 - In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-μm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance.

AB - In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-μm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance.

KW - CMOS

KW - RF frontends

KW - low noise amplifier

KW - low-power

KW - low-voltage

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

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ER -

A 0.6 v low-power 3.5-GHz CMOS low noise amplifier for WIMAX applications

Abstract

Keywords

ASJC Scopus subject areas

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