In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-μm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance.
- RF frontends
- low noise amplifier
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering