A 0.6 v low-power 3.5-GHz CMOS low noise amplifier for WIMAX applications

Jeng Han Tsai, Yi Jhang Lin, Hao Chun Yu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-μm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance.

Original languageEnglish
Pages (from-to)145-147
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume54
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Keywords

  • CMOS
  • RF frontends
  • low noise amplifier
  • low-power
  • low-voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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