A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture

Chia Lin Hsieh, Ming Hang Wu, Jen Hao Cheng, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

In this paper, a gm-boosted low-noise amplifier (LNA) with a low-voltage architecture is proposed to enhance gain and noise performance under low-power operation. It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption. In addition, gm-boosted topology using transformer-coupling is added to the LNA to further improve gain and to reduce noise factor simultaneously. Based on aforementioned techniques, the 5-GHz LNA presents a gain of 10.0 dB and a noise figure of 4.8 dB at 4.8 GHz. Under a supply voltage of 0.6 V, the dc power consumption is 336 μW.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
Publication statusPublished - 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2013 Jun 22013 Jun 7

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/TerritoryUnited States
CitySeattle, WA
Period2013/06/022013/06/07

Keywords

  • Current-reused
  • Forward-body-bias
  • Low-noise amplifiers (LNAs)
  • Transformer-couple
  • Ultra-low-power

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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