A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture

Chia Lin Hsieh, Ming Hang Wu, Jen Hao Cheng, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this paper, a gm-boosted low-noise amplifier (LNA) with a low-voltage architecture is proposed to enhance gain and noise performance under low-power operation. It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption. In addition, gm-boosted topology using transformer-coupling is added to the LNA to further improve gain and to reduce noise factor simultaneously. Based on aforementioned techniques, the 5-GHz LNA presents a gain of 10.0 dB and a noise figure of 4.8 dB at 4.8 GHz. Under a supply voltage of 0.6 V, the dc power consumption is 336 μW.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
Publication statusPublished - 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: 2013 Jun 22013 Jun 7

Other

Other2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
CountryUnited States
CitySeattle, WA
Period13/6/213/6/7

Fingerprint

Low noise amplifiers
low voltage
low noise
amplifiers
augmentation
Electric potential
Electric power utilization
Noise figure
electric potential
transformers
CMOS
topology
Topology

Keywords

  • Current-reused
  • Forward-body-bias
  • Low-noise amplifiers (LNAs)
  • Transformer-couple
  • Ultra-low-power

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation
  • Condensed Matter Physics

Cite this

Hsieh, C. L., Wu, M. H., Cheng, J. H., Tsai, J. H., & Huang, T. W. (2013). A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture. In 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 [6697468] https://doi.org/10.1109/MWSYM.2013.6697468

A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture. / Hsieh, Chia Lin; Wu, Ming Hang; Cheng, Jen Hao; Tsai, Jeng Han; Huang, Tian Wei.

2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013. 2013. 6697468.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hsieh, CL, Wu, MH, Cheng, JH, Tsai, JH & Huang, TW 2013, A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture. in 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013., 6697468, 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013, Seattle, WA, United States, 13/6/2. https://doi.org/10.1109/MWSYM.2013.6697468
Hsieh CL, Wu MH, Cheng JH, Tsai JH, Huang TW. A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture. In 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013. 2013. 6697468 https://doi.org/10.1109/MWSYM.2013.6697468
Hsieh, Chia Lin ; Wu, Ming Hang ; Cheng, Jen Hao ; Tsai, Jeng Han ; Huang, Tian Wei. / A 0.6-V 336-μW 5-GHz LNA using a low-voltage and gain-enhancement architecture. 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013. 2013.
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abstract = "In this paper, a gm-boosted low-noise amplifier (LNA) with a low-voltage architecture is proposed to enhance gain and noise performance under low-power operation. It is designed at 5-GHz using 0.18-μm CMOS process. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption. In addition, gm-boosted topology using transformer-coupling is added to the LNA to further improve gain and to reduce noise factor simultaneously. Based on aforementioned techniques, the 5-GHz LNA presents a gain of 10.0 dB and a noise figure of 4.8 dB at 4.8 GHz. Under a supply voltage of 0.6 V, the dc power consumption is 336 μW.",
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