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• 2019

  Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs

  Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Field effect transistors
  • Hysteresis
  • Capacitance
  • capacitance
  1 Citation (Scopus)

• Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era

  Hsieh, E. R., Wang, H. W., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2019 Jun, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T118-T119 8776515. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2019-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • FinFET
  • Internet of things
  • Data storage equipment
  • Hamming distance
  • Electric breakdown
  1 Citation (Scopus)

• Integration of ARCS motivational model and it to enhance students learning in the context of atayal culture

  Chao, J., Jiang, T. W., Yeh, Y. H., Liu, C. H. & Lin, C. M., 2019 Jan 1, In: Eurasia Journal of Mathematics, Science and Technology Education. 15, 11, em1771.

  Research output: Contribution to journal › Article › peer-review

  • Team Work
  • Student Learning
  • Culture
  • Information Technology
  • Communication

• The guideline on designing a high performance nc mosfet by matching the gate capacitance and mobility enhancement

  Luo, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Chenz, O., 2019 Apr, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804688. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Capacitance
  • Scattering
  • Degradation
  • Polarization

• The understanding of gate capacitance matching on achieving a high performance NC MOSFET with sufficient mobility

  Chiang, C. K., Husan, P., Lou, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H. & Chung, S. S., 2019 Jun, 2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 8782951. (2019 Silicon Nanoelectronics Workshop, SNW 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Capacitance
  • Ferroelectric materials
  • Scattering
  • Degradation
  • Annealing
• 2018

  Analysis of the learning effectiveness of Atayal culture CPS spatial concept course on indigenous students

  Chao, J., Liu, C. H. & Yeh, Y. H., 2018 Jan 1, In: Eurasia Journal of Mathematics, Science and Technology Education. 14, 6, p. 2059-2066 8 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Culture
  • Learning
  • Students
  • Concepts
  • Teaching
  2 Citations (Scopus)

• A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

  Cheng, H. W., Hsieh, E. R., Huang, Z. H., Chuang, C. H., Chen, C. H., Li, F. L., Lo, Y. M., Liu, C. H. & Chung, S. S., 2018 Jul 3, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • RRAM
  • fuses
  • endurance
  • programming
  • Electric fuses

• Editorial: IEDMS 2016

  Liu, C. H., Cheng, C. H., Cheng, C. P. & Liou, J. J., 2018 Apr, In: Microelectronics Reliability. 83, 1 p.

  Research output: Contribution to journal › Editorial › peer-review

• Effect of contact-etch-stop-layer and Si_1-xGe_x channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

  Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 Apr 1, In: Microelectronics Reliability. 83, p. 230-234 5 p.

  Research output: Contribution to journal › Article › peer-review

  • dummies
  • Transistors
  • transistors
  • mechanical properties
  • Mechanical properties

• On the electrical characteristics of ferroelectric FinFET using hafnium zirconium oxide with optimized gate stack

  Lin, M. H., Fan, C. C., Hsu, H. H., Liu, C-H., Chen, K. M., Cheng, C. H. & Chang, C. Y., 2018, In: ECS Journal of Solid State Science and Technology. 7, 11, p. P640-P646

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • Ferroelectric materials
  • zirconium oxide
  • FinFET
  • Zirconia
  2 Citations (Scopus)

• Wide Bandgap Materials for Semiconductor Devices

  Lee, K. W., Liu, C. H. & Misra, D., 2018 Dec 1, In: Microelectronics Reliability. 91, 1 p.

  Research output: Contribution to journal › Editorial › peer-review
• 2017

  A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

  Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 Dec 1, In: IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

  Research output: Contribution to journal › Article › peer-review

  • RRAM
  • FinFET
  • Data storage equipment
  • Transistors
  • Oxygen vacancies
  3 Citations (Scopus)

• A case study on the spatial conceptualization abilities for sixth grade elementary students from urban, suburban and remote schools

  Chao, J. Y. & Liu, C. H., 2017 Jun 1, In: Eurasia Journal of Mathematics, Science and Technology Education. 13, 6, p. 1675-1686 12 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Taiwan
  • Students
  • school grade
  • student
  • Performance
  7 Citations (Scopus)

• A novel design of P-N staggered face-tunneling TFET targeting for low power and appropriate performance applications

  Hsieh, E. R., Fan, Y. C., Chang, K. Y., Liu, C. H., Chien, C. H. & Chung, S. S., 2017 Jun 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942487. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Tunnel field effect transistors
  • Field effect transistors
  • Ions
  • Application programs

• Exploring the spatial concepts and abilities of indigenous Atayal elementary school students in Taiwan

  Chao, J. Y., Liu, C. H. & Yao, L. Y., 2017 Feb 2, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Meen, T-H., Prior, S. D. & Lam, A. D. K-T. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 65-67 3 p. 7840233. (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Students
  • Teaching
  • Experiments

• First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

  Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J. & Cheng, O., 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T72-T73 7998204. (Digest of Technical Papers - Symposium on VLSI Technology).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • RRAM
  • FinFET
  • Demonstrations
  • Vacancies
  • Ions
  2 Citations (Scopus)

• Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

  Hsieh, E. R., Fan, Y. C., Liu, C. H., Chung, S. S., Huang, R. M., Tsai, C. T. & Yew, T. R., 2017 Jun 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 130-131 2 p. 7947549. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • FinFET
  • Oxides
  • Surface roughness
  • Heavy ions
  • Aspect ratio

• Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs

  Lee, C. C., Kuo, Y. T. & Liu, C. H., 2017 Nov 1, In: Materials Science in Semiconductor Processing. 70, p. 254-259 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Lattice mismatch
  • n-type semiconductors
  • MOSFET devices
  • metal oxide semiconductors
  • field effect transistors
  1 Citation (Scopus)

• Kinect augmented reality gear game design

  Chen, J. Y., Liu, C. H., Hsieh, C. H., Huang, S. Y., Wang, W. K. & Nien, B. H., 2017 Jul 21, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. Meen, T-H., Lam, A. D. K-T. & Prior, S. D. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 373-375 3 p. 7988429. (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • games
  • learning
  • Augmented reality
  • Gears
  • Students
  2 Citations (Scopus)