Find Research Outputs

Search results

• 2020

  A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

  Lee, T. M., Lin, C. L., Fan, Y. C., Lee, S., Liu, W. D., Liu, H. M., Huang, Z. Y., Zheng, Z. W., Wang, S. A., Cheng, C. H. & Hsu, H. H., 2020 May 1, In: Thin Solid Films. 701, 137927.

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • hafnium oxides
  • Ferroelectric materials
  • zirconium oxide
  • Zirconia
  1 Citation (Scopus)

• A p-Type Ferroelectric Field-Effect Transistor Using Ultrathin Hafnium Aluminum Oxide

  Cheng, C. H., Liu, C., Tung, Y. C., Chen, H. H., Liao, R. Y. & Chou, W. C., 2020 Dec, In: Physica Status Solidi - Rapid Research Letters. 14, 12, 2000356.

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • hafnium oxides
  • Ferroelectric materials
  • Aluminum Oxide
  • Field effect transistors

• A Self-align Gate-last Resistive Gate Switching FinFET Nonvolatile Memory Feasible for Embedded Applications

  Yang, W. Y., Hsieh, E. R., Cheng, C. H. & Chung, S. S., 2020 Jun, 2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020. Institute of Electrical and Electronics Engineers Inc., p. 23-24 2 p. 9131669. (2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • FinFET
  • Data storage equipment
  • RRAM
  • Electric power utilization

• Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

  Ma, J., Liu, C., Liu, W. D., Hung, Y. W., Fan, Y. C., Hsu, H. H., Zheng, Z. W. & Cheng, C. H., 2020 Jan 1, In: IEEE Transactions on Nanotechnology. 19, p. 89-93 5 p., 8946883.

  Research output: Contribution to journal › Article › peer-review

  • Field effect transistors
  • Multilayers
  • Capacitance
  • Power integrated circuits
  • Three dimensional integrated circuits

• Development of optimum preparation conditions of Fe-deficient M-type Ca-Sr-La System hexagonal ferrite Magnet

  Huang, C. C., Lin, S. H., Mo, C. C., Hsiao, T. H., Tai, Y. H., Hung, Y. H., Chiu, C. H., Hsu, H. H. & Cheng, C. H., 2020, (Accepted/In press) In: IEEE Transactions on Magnetics.

  Research output: Contribution to journal › Article › peer-review

  • Magnetic properties
  • Magnets
  • Ferrite
  • Iron oxides
  • ferric oxide

• High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec^-1 swing

  Liu, C., Chen, H. H., Tung, Y. C., Wang, W. C., Huang, Z. Y., Shih, B. Y., Hsiung, S. Y., Wang, S. A., Fan, Y. C., Lee, T. M., Lin, C. L., Huang, Z. Y., Liu, H. M., Lee, S., Chou, W. C., Cheng, C. H. & Hsu, H. H., 2020 Apr 1, In: Japanese Journal of Applied Physics. 59, SG, SGGA01.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Doping (additives)
  • Field effect transistors
  • high current
  • Capacitance
  • capacitance

• Impact of Series-Connected Ferroelectric Capacitor in HfO-Based Ferroelectric Field-Effect Transistors for Memory Application

  Liu, W. D., Huang, Z. Y., Ma, J., Zheng, Z. W. & Cheng, C. H., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 1076-1081 6 p., 9216106.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Ferroelectric materials
  • Field effect transistors
  • Capacitors
  • Memory
  • Data storage equipment

• Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

  Shang, Z. W., Ma, J., Liu, W. D., Fan, Y. C., Hsu, H. H., Zheng, Z. W. & Cheng, C. H., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 485-489 5 p., 9060932.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • stannic oxide
  • Plasma applications
  • Tin oxides
  • Thin film transistors
  • Oxide films

• Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors

  Rajshekar, K., Hsu, H. H., Kumar, K. U. M., Sathyanarayanan, P., Velmurugan, V., Cheng, C. H. & Kannadassan, D., 2020, In: IEEE Journal of the Electron Devices Society. 8, p. 948-958 11 p., 9173540.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • stannic oxide
  • Tin oxides
  • Thin film transistors
  • Oxide films
  • Display devices

• PID auto-tuning for simultaneously fulfilling the requirements of relative stability and steady-state error

  Lu, Y. S., Tsai, T. S., Huang, C. C. & Cheng, C. H., 2020, (Accepted/In press) In: Artificial Life and Robotics.

  Research output: Contribution to journal › Article › peer-review

  • Lenses
  • Derivatives
  • Lasers
  • Tuning
  • Gain control
• 2019

  Effect of particle size of as-milled powders on microstructural and magnetic properties of Y ₃ Mn _x Al _{0.8- x} Fe _4.2 O ₁₂ ferrites

  Ching-Chien, H., Chih-Chieh, M., Yung-Hsiung, H., Wei-Zong, Z., Jing-Yi, H., Hsiao-Hsuan, H. & Chun-Hu, C., 2019 Jun, In: Journal of the American Ceramic Society. 102, 6, p. 3525-3534 10 p.

  Research output: Contribution to journal › Article › peer-review

  • Ferrites
  • Magnetic properties
  • magnetic property
  • Yttrium iron garnet
  • ferrite

• Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation

  Rajshekar, K., Hsu, H. H., Kumar, K. U. M., Sathyanarayanan, P., Velmurugan, V., Cheng, C. H. & Kannadassan, D., 2019 Mar, In: IEEE Transactions on Electron Devices. 66, 3, p. 1314-1321 8 p., 8636528.

  Research output: Contribution to journal › Article › peer-review

  • Fluorination
  • Thin film transistors
  • Plasmas
  • Computer simulation
  • Experiments
  6 Citations (Scopus)

• Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

  Lee, Y. T., Chen, H. H., Tung, Y. C., Shih, B. Y., Hsiung, S. Y., Lee, T. M., Hsu, C. C., Liu, C., Hsu, H. H., Chang, C. Y., Lan, Y. P. & Cheng, C. H., 2019 Jun, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8753958. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nitrogen plasma
  • Hafnium oxides
  • hafnium oxides
  • Ferroelectric materials
  • nitrogen plasma

• Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

  Liu, C., Tung, Y. C., Wu, T. L., Cheng, C. H., Tseng, C. Y., Chen, H. H., Chen, H. H., Ma, J., Lin, C. L., Zheng, Z. W., Chou, W. C. & Hsu, H. H., 2019 Dec 1, In: Physica Status Solidi - Rapid Research Letters. 13, 12, 1900414.

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • Ferroelectric devices
  • hafnium oxides
  • Aluminum Oxide
  • Gamma rays

• Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

  Cheng, C. H., Lin, M. H., Chen, H. Y., Fan, C. C., Liu, C., Hsu, H. H. & Chang, C. Y., 2019 May, In: Physica Status Solidi - Rapid Research Letters. 13, 5, 1800573.

  Research output: Contribution to journal › Letter › peer-review

  • hafnium oxide
  • Hafnium oxides
  • Zirconium
  • hafnium oxides
  • Doping (additives)
  5 Citations (Scopus)

• Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

  Cheng, C. H., Fan, C. C., Tu, C. Y., Hsu, H. H. & Chang, C. Y., 2019 Jan 1, In: IEEE Transactions on Electron Devices. 66, 1, p. 825-828 4 p., 8543493.

  Research output: Contribution to journal › Article › peer-review

  • hafnium oxide
  • Hafnium oxides
  • Doping (additives)
  • Field effect transistors
  • Capacitance
  11 Citations (Scopus)

• Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

  Cheng, C. H., Fan, C. C., Hsu, H. H., Wang, S. A. & Chang, C. Y., 2019 Feb 1, In: Physica Status Solidi - Rapid Research Letters. 13, 2, 1800493.

  Research output: Contribution to journal › Letter › peer-review

  • capacitance switches
  • Fluorine
  • Ferroelectric materials
  • Passivation
  • Field effect transistors
  1 Citation (Scopus)

• Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

  Cheng, C. H., Fan, C. C., Liu, C., Hsu, H. H., Chen, H. H., Hsu, C. C., Wang, S. A. & Chang, C. Y., 2019 Feb, In: IEEE Transactions on Electron Devices. 66, 2, p. 1082-1086 5 p., 8598996.

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • Ferroelectric materials
  • Aluminum Oxide
  • Field effect transistors
  • Aluminum oxide
  10 Citations (Scopus)

• Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

  Liu, K. W., Chen, H. H., Huang, Z. Y., Wang, W. C., Fan, Y. C., Lin, C. L., Hsu, C. C., Fan, C. C., Hsu, H. H., Chang, C. Y., Lin, C. C. & Cheng, C. H., 2019 Jun, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8754036. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Phase transitions
  • phase transformations
  • capacitors
  • magnetic force microscopy

• Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

  Chang, T. J., Liu, C., Fan, C. C., Hsu, H. H., Chen, H. H., Chen, W. H., Fan, Y. C., Lee, T. M., Lin, C. L., Ma, J., Zheng, Z. W., Cheng, C. H., Wang, S. A. & Chang, C. Y., 2019 Aug, In: Vacuum. 166, p. 11-14 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • hafnium oxides
  • Ferroelectric materials
  • Aluminum Oxide
  • polarization characteristics
  3 Citations (Scopus)

• Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

  Liu, C., Chen, H. H., Hsu, C. C., Fan, C. C., Hsu, H. H. & Cheng, C. H., 2019 Jun, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T224-T225 8776482. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2019-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Field effect transistors
  • Capacitance
  • Passivation
  • Doping (additives)
  • Defects
  2 Citations (Scopus)

• Progress and challenges in p-type oxide-based thin film transistors

  Shang, Z. W., Hsu, H. H., Zheng, Z. W. & Cheng, C. H., 2019 Jan 1, In: Nanotechnology Reviews. 8, 1, p. 422-443 22 p.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Thin film transistors
  • Oxides
  • Oxide films
  • stannic oxide
  • nickel monoxide
  4 Citations (Scopus)

• Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

  Shang, Z. W., Ma, J., Liu, W. D., Zheng, Z. W. & Cheng, C. H., 2019 Oct, 2019 8th International Symposium on Next Generation Electronics, ISNE 2019. Institute of Electrical and Electronics Engineers Inc., 8896500. (2019 8th International Symposium on Next Generation Electronics, ISNE 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Thin film transistors
  • Capacitance
  • capacitance
  • transistors

• Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

  Liu, C., Tung, Y. C., Tseng, C. Y., Wang, W. C., Chen, H. H., Lee, T. M., Chou, W. C., Zheng, Z. W., Cheng, C. H. & Hsu, H. H., 2019 Jan 1, In: ECS Journal of Solid State Science and Technology. 8, 10, p. P553-P556

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • Ferroelectric materials
  • Aluminum Oxide
  • Nitrides
  • Aluminum oxide
  1 Citation (Scopus)
• 2018

  Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain

  Fan, C. C., Cheng, C. H., Tu, C. Y., Liu, C., Chen, W. H., Chang, T. J. & Chang, C. Y., 2018 Oct 25, 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., p. 139-140 2 p. 8510640. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2018-June).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Hafnium oxides
  • Doping (additives)
  • Field effect transistors
  • Capacitance
  • Scalability
  7 Citations (Scopus)

• Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors

  Cho, C. L., Kao, H. L., Wu, Y. H., Chang, L. C. & Cheng, C. H., 2018 Jan 1, In: Journal of Electronic Materials. 47, 1, p. 677-683 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Dielectric films
  • Polymer films
  • capacitors
  • Capacitors
  • Fabrication

• Editorial: IEDMS 2016

  Liu, C. H., Cheng, C. H., Cheng, C. P. & Liou, J. J., 2018 Apr, In: Microelectronics Reliability. 83, 1 p.

  Research output: Contribution to journal › Editorial › peer-review

• Effect of specific surface area of raw material Fe₂O₃ on magnetic properties of YIG

  Huang, C. C., Zuo, W. Z., Hung, Y. H., Huang, J. Y., Kuo, M. F. & Cheng, C. H., 2018 Mar 1, In: Journal of Magnetism and Magnetic Materials. 449, p. 157-164 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Yttrium iron garnet
  • Specific surface area
  • Magnetic properties
  • yttrium-iron garnet
  • Raw materials
  3 Citations (Scopus)

• Energy-efficient HfAlO_x NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage

  Fan, C. C., Cheng, C. H., Chen, Y. R., Liu, C. & Chang, C. Y., 2018 Jan 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., p. 23.2.1-23.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Passivation
  • Hysteresis
  • passivity
  • Capacitance
  • leakage
  14 Citations (Scopus)

• High speed negative capacitance ferroelectric memory

  Chang, C. Y., Fan, C. C., Liu, C., Chiu, Y. C. & Cheng, C. H., 2018 Jan 8, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Tang, T-A. & Hong, Z. (eds.). IEEE Computer Society, p. 1-5 5 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Capacitance
  • Data storage equipment
  • Durability
  • Metals

• Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

  Liu, C., Cheng, C. H., Lin, M. H., Shih, Y. J., Hung, Y. W., Fan, C. C., Chen, H. H., Chen, W. H., Hsu, C. C., Shih, B. Y., Chiu, Y. C., Chou, W. C., Hsu, H. H. & Chang, C. Y., 2018 Jan, In: ECS Journal of Solid State Science and Technology. 7, 12, p. Q242-Q245

  Research output: Contribution to journal › Article › peer-review

  • Field effect transistors
  • Thermodynamic stability
  • Thermal stress
  • Electric fields
  • Transistors
  1 Citation (Scopus)

• Influence of CaCO₃ and SiO₂ additives on magnetic properties of M-type Sr ferrites

  Huang, C. C., Jiang, A. H., Hung, Y. H., Liou, C. H., Wang, Y. C., Lee, C. P., Hung, T. Y., Shaw, C. C., Kuo, M. F. & Cheng, C. H., 2018 Apr 1, In: Journal of Magnetism and Magnetic Materials. 451, p. 288-294 7 p.

  Research output: Contribution to journal › Article › peer-review

  • Ferrites
  • Magnetic properties
  • ferrites
  • magnetic properties
  • Grain growth
  10 Citations (Scopus)

• Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

  Fan, C. C., Tu, C. Y., Lin, M. H., Chang, C. Y., Cheng, C. H., Chen, Y. L., Liou, G. L., Liu, C., Chou, W. C. & Hsu, H. H., 2018 May 25, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PTX.81-PTX.85 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Fluorine
  • Ferroelectric materials
  • Passivation
  • Field effect transistors
  • Hysteresis
  2 Citations (Scopus)

• Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

  Liu, C., Fan, C. C., Tseng, C. Y., Hsu, H. H., Cheng, C. H., Chen, Y. L., Chang, C. Y., Chou, W. C., Lin, C. L., Fan, Y. C. & Lee, T. M., 2018 Dec 5, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Tang, T-A., Ye, F. & Jiang, Y-L. (eds.). Institute of Electrical and Electronics Engineers Inc., 8565049. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Hafnium oxides
  • Ferroelectric materials
  • Hysteresis
  • Polarization
  • Aluminum
  2 Citations (Scopus)

• On the electrical characteristics of ferroelectric FinFET using hafnium zirconium oxide with optimized gate stack

  Lin, M. H., Fan, C. C., Hsu, H. H., Liu, C-H., Chen, K. M., Cheng, C. H. & Chang, C. Y., 2018, In: ECS Journal of Solid State Science and Technology. 7, 11, p. P640-P646

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • Ferroelectric materials
  • zirconium oxide
  • FinFET
  • Zirconia
  2 Citations (Scopus)

• Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

  Fan, C. C., Chiu, Y. C., Liu, C., Lai, W. W., Tu, C. Y., Lin, M. H., Chang, T. J., Chang, C. Y., Liou, G. L., Hsu, H. H., Tang, C. Y. & Cheng, C. H., 2018 Jul 26, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 280-282 3 p. 8421478. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • hafnium oxide
  • Hafnium oxides
  • Ferroelectric materials
  • Data storage equipment
  • Recovery
  1 Citation (Scopus)
• 2017

  A high output power and low phase noise GaN HEMT VCO with array of switchable inductors

  Kao, H. L., Yeh, C. S., Chiu, H. C., Cho, C. L. & Cheng, C. H., 2017 Nov 1, In: International Journal of Circuit Theory and Applications. 45, 11, p. 1621-1636 16 p.

  Research output: Contribution to journal › Article › peer-review

  • Phase Noise
  • High electron mobility transistors
  • Voltage
  • Variable frequency oscillators
  • Phase noise

• Channel modification engineering by plasma processing in tin-oxide thin film transistor: Experimental results and first-principles calculation

  Chiu, Y. C., Chen, P. C., Chang, S. L., Zheng, Z. W., Cheng, C. H., Liou, G. L., Kao, H. L., Wu, Y. H. & Chang, C. Y., 2017 Jan 1, In: ECS Journal of Solid State Science and Technology. 6, 4, p. Q53-Q57

  Research output: Contribution to journal › Article › peer-review

  • stannic oxide
  • Plasma applications
  • Tin oxides
  • Thin film transistors
  • Oxide films
  3 Citations (Scopus)

• Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs

  Chiu, H. C., Chou, M. L., Cheng, C. H., Kao, H. L. & Cho, C. L., 2017 Nov 1, In: Microelectronics Reliability. 78, p. 267-271 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Fermi level
  • low frequencies
  • Drain current
  • Electric potential
  • Capacitance
  2 Citations (Scopus)

• Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

  Chiu, Y. C., Zheng, Z. W., Cheng, C. H., Chen, P. C., Yen, S. S., Fan, C. C., Hsu, H. H., Kao, H. L. & Chang, C. Y., 2017 Mar 1, In: Applied Physics A: Materials Science and Processing. 123, 3, 188.

  Research output: Contribution to journal › Article › peer-review

  • Thin film transistors
  • Oxides
  • Titanium
  • Passivation
  • Lighting

• Energy-Efficient Versatile Memories with Ferroelectric Negative Capacitance by Gate-Strain Enhancement

  Chiu, Y. C., Cheng, C. H., Liou, G. L. & Chang, C. Y., 2017 Aug, In: IEEE Transactions on Electron Devices. 64, 8, p. 3498-3501 4 p., 7949049.

  Research output: Contribution to journal › Article › peer-review

  • Ferroelectric materials
  • Capacitance
  • Data storage equipment
  • Polarization
  • Depolarization
  23 Citations (Scopus)

• Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory

  Cheng, C. H., Chiu, Y. C. & Liou, G. L., 2017 Oct, In: Physica Status Solidi - Rapid Research Letters. 11, 10, 1700098.

  Research output: Contribution to journal › Letter › peer-review

  • Ferroelectric materials
  • Capacitance
  • Transistors
  • capacitance
  • transistors
  18 Citations (Scopus)

• Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

  Chen, P. C., Chiu, Y. C., Zheng, Z. W., Lin, M. H., Cheng, C. H., Liou, G. L., Hsu, H. H. & Kao, H. L., 2017 Sep 1, In: IEEE Transactions on Nanotechnology. 16, 5, p. 876-879 4 p., 7959132.

  Research output: Contribution to journal › Article › peer-review

  • Tin oxides
  • Thin film transistors
  • Plasmas
  • Oxygen
  • Polyimides
  8 Citations (Scopus)

• First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

  Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J. & Cheng, O., 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T72-T73 7998204. (Digest of Technical Papers - Symposium on VLSI Technology).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • RRAM
  • FinFET
  • Demonstrations
  • Vacancies
  • Ions
  2 Citations (Scopus)

• Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

  Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., Cheng, C. H. & Chang, C. Y., 2017 Jun 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 224-225 2 p. 7947573. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Charge trapping
  • Ferroelectric materials
  • Data storage equipment
  • Polarization
  1 Citation (Scopus)

• Improved electrical characteristics and reliability of multi-stacking PNPN junctionless transistors using channel depletion effect

  Lin, M. H., Shih, Y. J., Liu, C., Chiu, Y. C., Fan, C. C., Liou, G. L., Cheng, C. H. & Chang, C. Y., 2017 Dec 29, 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., p. 47-48 2 p. 8242290. (2017 Silicon Nanoelectronics Workshop, SNW 2017; vol. 2017-January).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Voltage measurement
  • Nanowires
  • Stress measurement
  • Field effect transistors
  • Transistors

• Influence of plasma fluorination on p-type channel tin-oxide thin film transistors

  Chen, P. C., Chiu, Y. C., Zheng, Z. W., Cheng, C. H. & Wu, Y. H., 2017 Jan 1, In: Journal of Alloys and Compounds. 707, p. 162-166 5 p.

  Research output: Contribution to journal › Article › peer-review

  • stannic oxide
  • Fluorination
  • Fluorine
  • Tin oxides
  • Thin film transistors
  18 Citations (Scopus)

• Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure

  Yen, S. S., Cheng, C. H., Fan, C. C., Chiu, Y. C., Hsu, H. H., Lan, Y. P. & Chang, C. Y., 2017 Oct 1, In: IEEE Transactions on Electron Devices. 64, 10, p. 4200-4205 6 p., 8010910.

  Research output: Contribution to journal › Article › peer-review

  • Thyristors
  • Resistors
  • Electrostatic discharge
  • Electric potential
  • Current voltage characteristics
  7 Citations (Scopus)

• Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al₂O₃ gate dielectric

  Lin, M. H., Lin, Y. C., Lin, Y. S., Sun, W. J., Chen, S. H., Chiu, Y. C., Cheng, C. H. & Chang, C. Y., 2017, In: ECS Journal of Solid State Science and Technology. 6, 4, p. Q58-Q62

  Research output: Contribution to journal › Article › peer-review

  • Gate dielectrics
  • FinFET
  • Aluminum oxide
  • Atomic layer deposition
  • Substrates
  1 Citation (Scopus)

• Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode

  Chiu, Y. C., Cheng, C. H., Chang, C. Y., Tang, Y. T. & Chen, M. C., 2017 Mar 1, In: Physica Status Solidi - Rapid Research Letters. 11, 3, 1600368.

  Research output: Contribution to journal › Article › peer-review

  • metal nitrides
  • Ferroelectric materials
  • Nitrides
  • Phase transitions
  • phase transformations
  25 Citations (Scopus)