Find Research Outputs

Search results

• 2020

  Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films

  Luo, J. D., Yeh, Y. T., Lai, Y. Y., Wu, C. F., Chung, H. T., Li, Y. S., Chuang, K. C., Li, W. S., Chen, P. G., Lee, M. H. & Cheng, H. C., 2020 Jun, In: Vacuum. 176, 109317.

  Research output: Contribution to journal › Article › peer-review

  • Hafnium
  • Ferroelectricity
  • titanium nitride
  • Titanium nitride
  • hafnium

• Double Layers Omega FETs with Ferroelectric HfZrO₂ for One-Transistor Memory

  Chen, K. T., Lo, C., Lin, Y. Y., Chueh, C. Y., Chang, C., Siang, G. Y., Tseng, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. H., Liang, H., Chiang, S. H., Liu, J. H., Lin, Y. Y., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Liao, M. H., Chang, S. T. & 2 others, Tseng, Y. Y. & Lee, M. H., 2020 Apr, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9129088. (IEEE International Reliability Physics Symposium Proceedings; vol. 2020-April).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Field effect transistors
  • Polarization
  • Transistors
  • Nanosheets
  1 Citation (Scopus)

• Ferroelectric HfZrO₂with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

  Hsiang, K. Y., Liao, C. Y., Chen, K. T., Lin, Y. Y., Chueh, C. Y., Chang, C., Tseng, Y. J., Yang, Y. J., Chang, S. T., Liao, M. H., Hou, T. H., Wu, C. H., Ho, C. C., Chiu, J. P., Chang, C. & Lee, M. H., 2020 Oct, In: IEEE Transactions on Electron Devices. 67, 10, p. 4201-4207 7 p., 9180313.

  Research output: Contribution to journal › Article › peer-review

  • Ferroelectric materials
  • Deep neural networks
  • Electrodes
  • Metals
  • Atomic layer deposition

• Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

  Chen, K. T., Liao, C. Y., Hsiang, K. Y., Chang, S. H., Hsieh, F. J., Liang, H., Chiang, S. H., Liu, J. H., Li, K. S., Chang, S. T. & Lee, M. H., 2020 Oct, In: Semiconductor Science and Technology. 35, 12, 125011.

  Research output: Contribution to journal › Article › peer-review

  • Ferroelectric materials
  • Polarization
  • Field effect transistors
  • polarization
  • field effect transistors

• The Demonstration of 3-D Bi_2.0Te_2.7Se_0.3/Bi_0.4Te_3.0Sb_1.6 Thermoelectric Devices by Ionized Sputter System

  Liao, M. H., Huang, K. C., Su, W. J., Chen, S. C. & Lee, M. H., 2020 Jan, In: IEEE Transactions on Electron Devices. 67, 1, p. 406-408 3 p., 8906168.

  Research output: Contribution to journal › Article › peer-review

  • Demonstrations
  • Seebeck coefficient
  • Electric Conductivity
  • Electricity
  • Temperature

• The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance

  Liao, M. H., Lu, P. Y., Su, W. J., Chen, S. C., Hung, H. T., Kao, C. R., Pu, W. C., Chen, C. C. A. & Lee, M. H., 2020 May, In: IEEE Transactions on Electron Devices. 67, 5, p. 2205-2207 3 p., 9042868.

  Research output: Contribution to journal › Article › peer-review

  • Carbon Nanotubes
  • Carbon nanotubes
  • Integrated circuits
  • Demonstrations
  • Multiwalled carbon nanotubes (MWCN)
• 2019

  3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x

  Lin, Y. D., Tang, Y. T., Sheu, S. S., Hou, T. H., Lo, W. C., Lee, M. H., Chang, M. F., King, Y. C., Lin, C. J., Lee, H. Y., Yeh, P. C., Yang, H. Y., Yeh, P. S., Wang, C. Y., Su, J. W. & Li, S. H., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993504. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric RAM
  • wakes
  • endurance
  • CMOS
  • capacitors
  1 Citation (Scopus)

• Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs

  Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Field effect transistors
  • Hysteresis
  • Capacitance
  • capacitance
  1 Citation (Scopus)

• Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

  Chen, K. T., Chou, Y. C., Siang, G. Y., Chen, H. Y., Lo, C., Liao, C. Y., Chang, S. T. & Lee, M. H., 2019 Jul 1, In: Applied Physics Express. 12, 7, 071003.

  Research output: Contribution to journal › Article › peer-review

  • Ferroelectric materials
  • Field effect transistors
  • Capacitance
  • switches
  • capacitance
  3 Citations (Scopus)

• Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

  Lee, M. H., Chen, K. T., Liao, C. Y., Gu, S. S., Siang, G. Y., Chou, Y. C., Chen, H. Y., Le, J., Hong, R. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Tang, M., Lin, Y. D., Lee, H. Y., Li, K. S. & Liu, C. W., 2019 Jan 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 31.8.1-31.8.4 8614510. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Nanosheets
  • FinFET
  • Field effect transistors
  • Capacitance
  • switches
  8 Citations (Scopus)

• Ferroelectric HfZrO₂ FETs for steep switch onset

  Chen, K. T., Liao, C. Y., Chen, H. Y., Lo, C., Siang, G. Y., Lin, Y. Y., Tseng, Y. J., Chang, C., Chueh, C. Y., Yang, Y. J., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 Jul 15, In: Microelectronic Engineering. 215, 110991.

  Research output: Contribution to journal › Article › peer-review

  • Ferroelectric materials
  • Field effect transistors
  • Capacitance
  • switches
  • capacitance
  3 Citations (Scopus)

• Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

  Luo, J. D., Zhang, H. X., Wang, Z. Y., Gu, S. S., Yeh, Y. T., Chung, H. T., Chuang, K. C., Liao, C. Y., Li, W. S., Li, Y. S., Li, K. S., Lee, M. H. & Cheng, H. C., 2019 Jan 1, In: Japanese Journal of Applied Physics. 58, SD, SDDE07.

  Research output: Contribution to journal › Article › peer-review

  • Hafnium oxides
  • Atomic layer deposition
  • hafnium oxides
  • Ferroelectric materials
  • Oxide films
  2 Citations (Scopus)

• Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode

  Chen, K. T., Liao, C. Y., Lo, C., Chen, H. Y., Siang, G. Y., Liu, S., Chang, S. C., Liao, M. H., Chang, S. T. & Lee, M. H., 2019 Mar, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., p. 62-64 3 p. 8731272. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectricity
  • Molybdenum
  • endurance
  • ferroelectricity
  • molybdenum
  5 Citations (Scopus)

• Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

  Li, K. S., Wei, Y. J., Chen, Y. J., Chiu, W. C., Chen, H. C., Lee, M. H., Chiu, Y. F., Hsueh, F. K., Wu, B. W., Chen, P. G., Lai, T. Y., Chen, C. C., Shieh, J. M., Yeh, W. K., Salahuddin, S. & Hu, C., 2019 Jan 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 31.7.1-31.7.4 8614521. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • FinFET
  • Static random access storage
  • Capacitance
  • capacitance
  • field effect transistors
  5 Citations (Scopus)

• Non-Volatile Ferroelectric FETs Using 5-nm Hf_0.5Zr_0.5O₂ with High Data Retention and Read Endurance for 1T Memory Applications

  Chen, K. T., Chen, H. Y., Liao, C. Y., Siang, G. Y., Lo, C., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 Mar, In: IEEE Electron Device Letters. 40, 3, p. 399-402 4 p., 8630859.

  Research output: Contribution to journal › Article › peer-review

  • Ferroelectric materials
  • Field effect transistors
  • Durability
  • Data storage equipment
  • Ferroelectricity
  16 Citations (Scopus)

• The Development of a Dynamic Model to Investigate the Dielectric Layer Thickness Effect for the Device Performance in Triboelectric Nanogenerators

  Liao, M. H., Wu, C. C., Su, W. J., Chen, S. C. & Lee, M. H., 2019 Oct, In: IEEE Transactions on Electron Devices. 66, 10, p. 4478-4480 3 p., 8818614.

  Research output: Contribution to journal › Article › peer-review

  • Nanogenerators
  • Dynamic models
  • Spin coating
  • Surface charge
  • Electrons
  1 Citation (Scopus)
• 2018

  Ferroelectric Al:HfO₂ negative capacitance FETs

  Lee, M. H., Chen, P. G., Fan, S. T., Chou, Y. C., Kuo, C. Y., Tang, C. H., Chen, H. H., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Chen, K. T., Chang, S. T., Liao, M. H., Li, K. S. & Liu, C. W., 2018 Jan 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., p. 23.3.1-23.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Field effect transistors
  • Capacitance
  • capacitance
  • field effect transistors
  10 Citations (Scopus)

• Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications

  Lee, M. H., Kuo, C. Y., Tang, C. H., Chen, H. H., Liao, C. Y., Hong, R. C., Gu, S. S., Chou, Y. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Liao, M. H. & Li, K. S., 2018 Jul 26, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 271-273 3 p. 8421475. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Data storage equipment
  • Durability
  1 Citation (Scopus)

• Ferroelectric HfZrOₓ FETs on SOI Substrate with Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

  Chen, K. T., Gu, S. S., Wang, Z. Y., Liao, C. Y., Chou, Y. C., Hong, R. C., Chen, S. Y., Chen, H. Y., Siang, G. Y., Le, J., Chen, P. G., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2018 Aug 3, (Accepted/In press) In: IEEE Journal of the Electron Devices Society.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Ferroelectric materials
  • Silicon
  • Field effect transistors
  • Substrates
  • Hysteresis
  6 Citations (Scopus)

• Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

  Lee, Y. J., Yang, Z. P., Chen, P. G., Hsieh, Y. A., Yao, Y. C., Liao, M. H., Lee, M-H., Wang, M. T. & Hwang, J. M., 2018 Jan 22, In: Optics Express. 26, 2, p. A110

  Research output: Contribution to journal › Review article › peer-review

  • metal oxide semiconductors
  • light emitting diodes
  • field effect transistors

• Steep switching of In_0.18 Al_0.82 N/AlN/GaN MIS-HEMT (metal insulator semiconductor high electron mobility transistors) on si for sensor applications

  Chen, P. G., Chen, K. T., Tang, M., Wang, Z. Y., Chou, Y. C. & Lee, M. H., 2018 Sep, In: Sensors (Switzerland). 18, 9, 2795.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • Semiconductors
  • High electron mobility transistors
  • MIS (semiconductors)
  • high electron mobility transistors
  • Semiconductor materials

• Steep switch-off of In_0.18Al_0.82N/AlN/GaN on Si MIS-HEMT

  Chen, P. G., Chou, Y. C., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Tang, M., Liao, M. H. & Lee, M. H., 2018 Jun 22, Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Management information systems
  • High electron mobility transistors
  • MIS (semiconductors)
  • high electron mobility transistors
  • switches

• The demonstration of high-performance multilayer BaTiO₃/BiFeO₃ stack MIM capacitors

  Lien, C., Hsieh, C. F., Wu, H. S., Wu, T. C., Wei, S. J., Chu, Y. H., Liao, M. H. & Lee, M. H., 2018 Nov, In: IEEE Transactions on Electron Devices. 65, 11, p. 4834-4838 5 p., 8466023.

  Research output: Contribution to journal › Article › peer-review

  • Permittivity
  • Multilayers
  • TiO2-SiO2
  • Metals
  • Demonstrations
  3 Citations (Scopus)

• The Design of High Performance Si/SiGe-Based Tunneling FET: Strategies and Solutions

  Chung, S. S., Hsieh, E. R., Zhao, Y. B., Lee, J. W. & Lee, M. H., 2018 Oct 9, 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018. Institute of Electrical and Electronics Engineers Inc., 8487104. (2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Field effect transistors
  • Ions
  • Tunnel field effect transistors
  • Electric potential
  • Experiments

• Thickness dependence of electrical conductivity and thermo-electric power of Bi_2.0Te_2.7Se_0.3/Bi_0.4Te_3.0Sb_1.6 thermo-electric devices

  Liao, M. H., Huang, K. C., Tsai, F. A., Liu, C. Y., Lien, C. & Lee, M. H., 2018 Jan 1, In: AIP Advances. 8, 1, 015020.

  Research output: Contribution to journal › Article › peer-review

  • bismuth tellurides
  • electric power
  • electrical resistivity
  • thin films
  • film thickness
  8 Citations (Scopus)
• 2017

  Coherent and Polarized Random Laser Emissions from Colloidal CdSe/ZnS Quantum Dots Plasmonically Coupled to Ellipsoidal Ag Nanoparticles

  Yao, Y. C., Yang, Z. P., Hwang, J. M., Su, H. C., Haung, J. Y., Lin, T. N., Shen, J. L., Lee, M. H., Tsai, M. T. & Lee, Y. J., 2017 Feb 2, In: Advanced Optical Materials. 5, 3, 1600746.

  Research output: Contribution to journal › Article › peer-review

  • Silver nanoparticles
  • Semiconductor quantum dots
  • Surface plasmon resonance
  • quantum dots
  • Lasers
  27 Citations (Scopus)

• Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

  Lee, M. H., Liao, M. H., Tai, C. W. & Chang, S. T., 2017 Jan 17, FTC 2016 - Proceedings of Future Technologies Conference. Institute of Electrical and Electronics Engineers Inc., p. 13298-13301 4 p. 7821775. (FTC 2016 - Proceedings of Future Technologies Conference).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Heterojunctions
  • CAD
  • Solar cells
  • Computer aided design
  • energy

• Hidden Antipolar Order Parameter and Entangled Néel-Type Charged Domain Walls in Hybrid Improper Ferroelectrics

  Lee, M. H., Chang, C. P., Huang, F. T., Guo, G. Y., Gao, B., Chen, C. H., Cheong, S. W. & Chu, M. W., 2017 Oct 10, In: Physical Review Letters. 119, 15, 157601.

  Research output: Contribution to journal › Article › peer-review

  Open Access

  • domain wall
  • ferroelectricity
  • screening
  • ingredients
  • divergence
  18 Citations (Scopus)

• In_0.18Al_0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

  Chen, P. G., Tang, M., Liao, M. H. & Lee, M. H., 2017 Mar 1, In: Solid-State Electronics. 129, p. 206-209 4 p.

  Research output: Contribution to journal › Letter › peer-review

  • Management information systems
  • High electron mobility transistors
  • MIS (semiconductors)
  • high electron mobility transistors
  • Substrates
  5 Citations (Scopus)

• Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

  Lee, M-H., Chen, P. G., Fan, S. T., Kuo, C. Y., Chen, H. H., Gu, S. S., Chou, Y. C., Tang, C. H., Hong, R. C., Wang, Z. Y., Liao, M. H., Li, K. S., Chen, M. C. & Liu, C. W., 2017 Jun 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942466. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Field effect transistors
  • FinFET
  • Oxides
  • Capacitance
  2 Citations (Scopus)

• Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

  Lee, M. H., Fan, S. T., Tang, C. H., Chen, P. G., Chou, Y. C., Chen, H. H., Kuo, J. Y., Xie, M. J., Liu, S. N., Liao, M. H., Jong, C. A., Li, K. S., Chen, M. C. & Liu, C. W., 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 12.1.1-12.1.4 7838400. (Technical Digest - International Electron Devices Meeting, IEDM).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Field effect transistors
  • Capacitance
  • capacitance
  • field effect transistors
  53 Citations (Scopus)

• Plasmonically induced coherent and polarized random laser emissions in colloidal CdSe/ZnS quantum dots with ellipsoidal Ag Nanoparticles

  Yao, Y. C., Yang, Z. P., Haung, J. Y., Lee, M. H. & Lee, Y. J., 2017 Oct 25, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings; vol. 2017-January).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Silver nanoparticles
  • Semiconductor quantum dots
  • Surface plasmon resonance
  • quantum dots
  • Lasers
  1 Citation (Scopus)

• The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect

  Liao, M. H., Huang, H. Y., Tsai, F. A., Chuang, C. C., Hsu, M. H., Lee, C. C., Lee, M. H., Lien, C., Hsieh, C. F., Wu, T. C., Wu, H. S. & Yao, C. W., 2017 Jun 1, In: Vacuum. 140, p. 63-65 3 p.

  Research output: Contribution to journal › Article › peer-review

  • fins
  • Field effect transistors
  • Capacitance
  • Oxides
  • capacitance

• The guideline on designing face-tunneling FET for large-scale-device applications in IoT

  Hsieh, E. R., Lee, J. W., Lee, M. H. & Chung, S. S., 2017 Dec 29, 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., p. 3-4 2 p. 8242268. (2017 Silicon Nanoelectronics Workshop, SNW 2017; vol. 2017-January).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Tunnel field effect transistors
  • Field effect transistors
  • Internet of things
  • Ions
• 2016

  Amorphous layers by electron beam evaporator deposition for hetero-junction with intrinsic thin layer solar cells applications

  Liu, S., Chen, Z. Y., Chang, S. T. & Lee, M. H., 2016, In: International Journal of Nanotechnology. 13, 7, p. 485-491 7 p.

  Research output: Contribution to journal › Article › peer-review

  • evaporators
  • Electron beams
  • Evaporators
  • Solar cells
  • Annealing

• A pilot study of students' perceptions of collaborative knowledge building in 21st century learning with their knowledge building behaviors

  Tsai, P. S., Chen, Y. Y., Liang, J. C., Chai, C. S., Lee, M. H. & Tsai, C. C., 2016 Nov 28, Proceedings - IEEE 16th International Conference on Advanced Learning Technologies, ICALT 2016. Spector, J. M., Tsai, C-C., Huang, R., Resta, P., Sampson, D. G., Kinshuk & Chen, N-S. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 354-356 3 p. 7756995. (Proceedings - IEEE 16th International Conference on Advanced Learning Technologies, ICALT 2016).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Students
  • learning
  • building activity
  • social studies
  • student

• Divergent dielectric characteristics in cascaded high-K gate stacks with reverse gradient bandgap structures

  Tsai, M. C., Cheng, P. H., Lee, M-H., Lin, H. C. & Chen, M. J., 2016 May 26, In: Journal of Physics D: Applied Physics. 49, 26, 265108.

  Research output: Contribution to journal › Article › peer-review

  • Energy gap
  • Aluminum oxide
  • Capacitance
  • Leakage currents
  • capacitance
  2 Citations (Scopus)

• Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiN_x/HfO₂ passivation layers

  Hsu, S. M., Li, Y. S., Tu, M. S., He, J. C., Chiu, I. C., Chen, P. G., Lee, M. H., Chen, J. Z. & Cheng, I. C., 2016 Aug 15, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., p. 153-156 4 p. 7543648. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Thin film transistors
  • Passivation
  • Threshold voltage
  • Molecules
  • Adsorption
  1 Citation (Scopus)

• In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

  Tsai, M. C., Lee, M. H., Kuo, C. L., Lin, H. C. & Chen, M. J., 2016 Nov 30, In: Applied Surface Science. 387, p. 274-279 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Nitridation
  • Gate dielectrics
  • Crystalline materials
  • Metallizing
  • Annealing
  4 Citations (Scopus)

• Metal insulator semiconductor field effect transistors with thin strained Ge film

  Chen, K. T., He, R. Y., Chen, C. W., Tu, W. H., Kao, C. Y., Chang, S. T. & Lee, M. H., 2016 Dec 1, In: Thin Solid Films. 620, p. 197-200 4 p.

  Research output: Contribution to journal › Article › peer-review

  • MISFET devices
  • MIS (semiconductors)
  • Metals
  • field effect transistors
  • Transistors

• Morphology control and characteristics of ZnO/ZnS nanorod arrays synthesised by microwave-assisted heating

  Tsai, M. K., Huang, W., Hu, S. Y., Lee, J. W., Lee, Y. C., Lee, M. H. & Shen, J. L., 2016 Apr 1, In: Micro and Nano Letters. 11, 4, p. 192-195 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Nanorods
  • nanorods
  • Microwaves
  • Heating
  • microwaves
  4 Citations (Scopus)

• On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 10¹²-cycling endurance

  Chiu, Y. C., Chang, C. Y., Yen, S. S., Fan, C. C., Hsu, H. H., Cheng, C. H., Chen, P. C., Chen, P. W., Liou, G. L., Lee, M. H., Liu, C. & Chou, W. C., 2016 Sep 22, 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., p. MY71-MY75 7574623. (IEEE International Reliability Physics Symposium Proceedings; vol. 2016-September).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Ferroelectric materials
  • Threshold voltage
  • Durability
  • Data storage equipment
  • Capacitance
  2 Citations (Scopus)

• Reliable doping technique for WSe₂ by W:Ta co-sputtering process

  Chien, P. Y., Zhang, M., Huang, S. C., Lee, M. H., Hsu, H. R., Ho, Y. T., Chu, Y. C., Jong, C. A. & Woo, J., 2016 Sep 27, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., p. 58-59 2 p. 7577984. (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

  Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

  • Hole mobility
  • Sheet resistance
  • Sputtering
  • Contact resistance
  • Doping (additives)
  3 Citations (Scopus)

• Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

  Liu, C., Chen, P. G., Xie, M. J., Liu, S. N., Lee, J. W., Huang, S. J., Liu, S., Chen, Y. S., Lee, H. Y., Liao, M. H., Chen, P. S. & Lee, M. H., 2016 Apr, In: Japanese Journal of Applied Physics. 55, 4, 04EB08.

  Research output: Contribution to journal › Article › peer-review

  • Tunnel field effect transistors
  • Ferroelectric materials
  • tunnels
  • Capacitance
  • capacitance
  14 Citations (Scopus)