Abstract
A 5.3 GHz high-efficiency and low-cost class-E power amplifier (PA) implemented in a 180 nm CMOS process is presented. Cascode con- figuration is utilised in the class-E PA to achieve high efficiency due to its high gain property and low drain-to-source parasitic capacitor. Through the trade-off between inductance and inductor loss, an optimised RF choke inductor for fully integrated class-E PA design can be selected to achieve high efficiency while maintaining compact circuit size. The class-E CMOS PA demonstrates the highest Power Added Efficiency (PAE) of 42% and greatest power area density of 532 mW/mm2 in 0.263 mm2 chip area to date.
Original language | English |
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Pages (from-to) | 1338-1340 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 52 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2016 Jul 21 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering