3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

J. Y. Lee; F. S. Chang; K. Y. Hsiang; P. H. Chen; Z. F. Luo; Z. X. Li; J. H. Tsai; C. W. Liu; M. H. Lee

doi:10.23919/VLSITechnologyandCir57934.2023.10185163

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

J. Y. Lee^*, F. S. Chang, K. Y. Hsiang, P. H. Chen, Z. F. Luo, Z. X. Li, J. H. Tsai, C. W. Liu, M. H. Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A 1500x ILRS/IHRS with a high cell current of 100 nA/ cell (J = 83 A/cm2) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 109 cycles at |4V| and stable nonvolatile data retention > 104 sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.

Original language	English
Title of host publication	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863488069
DOIs	https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185163
Publication status	Published - 2023
Event	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan Duration: 2023 Jun 11 → 2023 Jun 16

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2023-June
ISSN (Print)	0743-1562

Conference

Conference	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Country/Territory	Japan
City	Kyoto
Period	2023/06/11 → 2023/06/16

Keywords

3D
ferroelectric
ferroelectric tunneling junction (FTJ)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.23919/VLSITechnologyandCir57934.2023.10185163

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Lee, J. Y., Chang, F. S., Hsiang, K. Y., Chen, P. H., Luo, Z. F., Li, Z. X., Tsai, J. H., Liu, C. W., & Lee, M. H. (2023). 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. In 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185163

3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. / Lee, J. Y.; Chang, F. S.; Hsiang, K. Y. et al.
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2023-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, JY, Chang, FS, Hsiang, KY, Chen, PH, Luo, ZF, Li, ZX, Tsai, JH, Liu, CW & Lee, MH 2023, 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. in 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2023-June, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Kyoto, Japan, 2023/06/11. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185163

Lee JY, Chang FS, Hsiang KY, Chen PH, Luo ZF, Li ZX et al. 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. In 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSITechnologyandCir57934.2023.10185163

Lee, J. Y. ; Chang, F. S. ; Hsiang, K. Y. et al. / 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs",

abstract = "A 1500x ILRS/IHRS with a high cell current of 100 nA/ cell (J = 83 A/cm2) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 109 cycles at |4V| and stable nonvolatile data retention > 104 sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.",

keywords = "3D, ferroelectric, ferroelectric tunneling junction (FTJ)",

author = "Lee, {J. Y.} and Chang, {F. S.} and Hsiang, {K. Y.} and Chen, {P. H.} and Luo, {Z. F.} and Li, {Z. X.} and Tsai, {J. H.} and Liu, {C. W.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.23919/VLSITechnologyandCir57934.2023.10185163",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

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AU - Lee, J. Y.

AU - Chang, F. S.

AU - Hsiang, K. Y.

AU - Chen, P. H.

AU - Luo, Z. F.

AU - Li, Z. X.

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AU - Lee, M. H.

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AB - A 1500x ILRS/IHRS with a high cell current of 100 nA/ cell (J = 83 A/cm2) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 109 cycles at |4V| and stable nonvolatile data retention > 104 sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.

KW - 3D

KW - ferroelectric

KW - ferroelectric tunneling junction (FTJ)

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