3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Y. D. Lin, Y. T. Tang, S. S. Sheu, T. H. Hou, W. C. Lo, M. H. Lee, M. F. Chang, Y. C. King, C. J. Lin, H. Y. Lee, P. C. Yeh, H. Y. Yang, P. S. Yeh, C. Y. Wang, J. W. Su, S. H. Li

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    4 Citations (Scopus)

    Fingerprint

    Dive into the research topics of '3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO<sub>x</sub>'. Together they form a unique fingerprint.

    Physics & Astronomy

    Chemical Compounds

    Engineering & Materials Science