3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx
- Y. D. Lin
- , Y. T. Tang
- , S. S. Sheu
- , T. H. Hou
- , W. C. Lo
- , M. H. Lee
- , M. F. Chang
- , Y. C. King
- , C. J. Lin
- , H. Y. Lee
- , P. C. Yeh
- , H. Y. Yang
- , P. S. Yeh
- , C. Y. Wang
- , J. W. Su
- , S. H. Li
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
23
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(Scopus)