3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Y. D. Lin; Y. T. Tang; S. S. Sheu; T. H. Hou; W. C. Lo; M. H. Lee; M. F. Chang; Y. C. King; C. J. Lin; H. Y. Lee; P. C. Yeh; H. Y. Yang; P. S. Yeh; C. Y. Wang; J. W. Su; S. H. Li

doi:10.1109/IEDM19573.2019.8993504

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x

Y. D. Lin, Y. T. Tang, S. S. Sheu, T. H. Hou, W. C. Lo, M. H. Lee, M. F. Chang, Y. C. King, C. J. Lin, H. Y. Lee, P. C. Yeh, H. Y. Yang, P. S. Yeh, C. Y. Wang, J. W. Su, S. H. Li

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Citations (Scopus)

Abstract

The major challenge of FRAM scaling is to maintain high polarization density on the vertical sidewall of 3D ferroelectric capacitors. We reported a CMOS-compatible HfZrO_x FRAM technology that shows a wake-up free character, 10¹⁰/10⁹ endurance cycles, extrapolated 10-year retention at 105°C/85°C, and initial P_r = 25/18 μC/cm² for 2D/3D FRAM, respectively. The strain effect at atomic interfaces is considered by the density functional theory (DFT) simulation. Two simple yet effective methods, stress engineering and optimized interface orientation, are proposed to facilitate preferential transition from tetragonal to orthorhombic phase. The test chip of 2T2C 3D FRAM demonstrates a fast sensing speed of 17 MHz at V_DD of 4V.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993504
Publication status	Published - 2019 Dec
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 2019 Dec 7 → 2019 Dec 11

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN (Print)	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	2019/12/07 → 2019/12/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM19573.2019.8993504

Cite this

Lin, Y. D., Tang, Y. T., Sheu, S. S., Hou, T. H., Lo, W. C., Lee, M. H., Chang, M. F., King, Y. C., Lin, C. J., Lee, H. Y., Yeh, P. C., Yang, H. Y., Yeh, P. S., Wang, C. Y., Su, J. W., & Li, S. H. (2019). 3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993504 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993504

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x. / Lin, Y. D.; Tang, Y. T.; Sheu, S. S. et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8993504 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, YD, Tang, YT, Sheu, SS, Hou, TH, Lo, WC, Lee, MH, Chang, MF, King, YC, Lin, CJ, Lee, HY, Yeh, PC, Yang, HY, Yeh, PS, Wang, CY, Su, JW & Li, SH 2019, 3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993504, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 2019/12/07. https://doi.org/10.1109/IEDM19573.2019.8993504

Lin YD, Tang YT, Sheu SS, Hou TH, Lo WC, Lee MH et al. 3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x. In 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8993504. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19573.2019.8993504

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abstract = "The major challenge of FRAM scaling is to maintain high polarization density on the vertical sidewall of 3D ferroelectric capacitors. We reported a CMOS-compatible HfZrOx FRAM technology that shows a wake-up free character, 1010/109 endurance cycles, extrapolated 10-year retention at 105°C/85°C, and initial Pr = 25/18 μC/cm2 for 2D/3D FRAM, respectively. The strain effect at atomic interfaces is considered by the density functional theory (DFT) simulation. Two simple yet effective methods, stress engineering and optimized interface orientation, are proposed to facilitate preferential transition from tetragonal to orthorhombic phase. The test chip of 2T2C 3D FRAM demonstrates a fast sensing speed of 17 MHz at VDD of 4V.",

author = "Lin, {Y. D.} and Tang, {Y. T.} and Sheu, {S. S.} and Hou, {T. H.} and Lo, {W. C.} and Lee, {M. H.} and Chang, {M. F.} and King, {Y. C.} and Lin, {C. J.} and Lee, {H. Y.} and Yeh, {P. C.} and Yang, {H. Y.} and Yeh, {P. S.} and Wang, {C. Y.} and Su, {J. W.} and Li, {S. H.}",

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AU - Lo, W. C.

AU - Lee, M. H.

AU - Chang, M. F.

AU - King, Y. C.

AU - Lin, C. J.

AU - Lee, H. Y.

AU - Yeh, P. C.

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