3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Y. D. Lin, Y. T. Tang, S. S. Sheu, T. H. Hou, W. C. Lo, M. H. Lee, M. F. Chang, Y. C. King, C. J. Lin, H. Y. Lee, P. C. Yeh, H. Y. Yang, P. S. Yeh, C. Y. Wang, J. W. Su, S. H. Li

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The major challenge of FRAM scaling is to maintain high polarization density on the vertical sidewall of 3D ferroelectric capacitors. We reported a CMOS-compatible HfZrOx FRAM technology that shows a wake-up free character, 1010/109 endurance cycles, extrapolated 10-year retention at 105°C/85°C, and initial Pr = 25/18 μC/cm2 for 2D/3D FRAM, respectively. The strain effect at atomic interfaces is considered by the density functional theory (DFT) simulation. Two simple yet effective methods, stress engineering and optimized interface orientation, are proposed to facilitate preferential transition from tetragonal to orthorhombic phase. The test chip of 2T2C 3D FRAM demonstrates a fast sensing speed of 17 MHz at VDD of 4V.

    Original languageEnglish
    Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781728140315
    DOIs
    Publication statusPublished - 2019 Dec
    Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
    Duration: 2019 Dec 72019 Dec 11

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    Volume2019-December
    ISSN (Print)0163-1918

    Conference

    Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
    CountryUnited States
    CitySan Francisco
    Period19/12/719/12/11

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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