TY - GEN
T1 - 300 GHz On-Chip Horn Antenna with WR-03 to SIW Transition Using Integrated Passive Device
AU - Chen, Wei Hung
AU - Ma, Tzyh Ghuang
AU - Tsai, Jeng Han
AU - Cheng, Yu Hsiang
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In this paper, an on-chip H-plane horn antenna operating at 300 GHz is proposed and simulated. The antenna is realized on the integrated passive device (IPD) process, fed from a WR03-to-substrate integrated waveguide (SIW) transition. The transition comprises a stepped waveguide section, a coupling aperture, and a substrate integrated waveguide section. The integrated passive device (IPD) process selects the intrinsic Gallium arsenide (GaAs) as the carrier substrate. The chip is integrated with an aluminum split-block for measurement purpose using a standard WR-03 waveguide. The simulated Sparameter reveals a reflection coefficient of -12.4 dB at 300 GHz. The antenna achieves a realized gain of 6.4 dBi and a radiation efficiency of 62%. The aluminum housing significantly suppresses the broadside/back radiation and fulfills the desired end-fire pattern with front to back ratio of 11.5 dB.
AB - In this paper, an on-chip H-plane horn antenna operating at 300 GHz is proposed and simulated. The antenna is realized on the integrated passive device (IPD) process, fed from a WR03-to-substrate integrated waveguide (SIW) transition. The transition comprises a stepped waveguide section, a coupling aperture, and a substrate integrated waveguide section. The integrated passive device (IPD) process selects the intrinsic Gallium arsenide (GaAs) as the carrier substrate. The chip is integrated with an aluminum split-block for measurement purpose using a standard WR-03 waveguide. The simulated Sparameter reveals a reflection coefficient of -12.4 dB at 300 GHz. The antenna achieves a realized gain of 6.4 dBi and a radiation efficiency of 62%. The aluminum housing significantly suppresses the broadside/back radiation and fulfills the desired end-fire pattern with front to back ratio of 11.5 dB.
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U2 - 10.1109/USNC-URSI52151.2023.10237793
DO - 10.1109/USNC-URSI52151.2023.10237793
M3 - Conference contribution
AN - SCOPUS:85172422955
T3 - IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
SP - 429
EP - 430
BT - 2023 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, AP-S/URSI 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting, AP-S/URSI 2023
Y2 - 23 July 2023 through 28 July 2023
ER -