1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

E. Ray Hsieh; Yu Ming Luo; Yi Xiang Huang; Huan Shiang Su; Rui Qi Lin; Yu Hsien Lin; Kai Hsiang Chang; Ting Ho Shen; Chuan Hsi Liu

doi:10.1109/LED.2023.3237626

1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

E. Ray Hsieh^*
, Yu Ming Luo
, Yi Xiang Huang
, Huan Shiang Su
, Rui Qi Lin
, Yu Hsien Lin
, Kai Hsiang Chang
, Ting Ho Shen
, Chuan Hsi Liu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.

Original language	English
Pages (from-to)	404-407
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/LED.2023.3237626
Publication status	Published - 2023 Mar 1

Keywords

One-time-programmable (OTP) memory
avalanche-breakdown
embedded memory
impact-ionization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2023.3237626

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@article{4f9e04a01e1d48ac9eed73e1241cd44c,

title = "1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET",

abstract = "We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.",

keywords = "One-time-programmable (OTP) memory, avalanche-breakdown, embedded memory, impact-ionization",

author = "Hsieh, \{E. Ray\} and Luo, \{Yu Ming\} and Huang, \{Yi Xiang\} and Su, \{Huan Shiang\} and Lin, \{Rui Qi\} and Lin, \{Yu Hsien\} and Chang, \{Kai Hsiang\} and Shen, \{Ting Ho\} and Liu, \{Chuan Hsi\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

month = mar,

day = "1",

doi = "10.1109/LED.2023.3237626",

language = "English",

volume = "44",

pages = "404--407",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - 1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

AU - Hsieh, E. Ray

AU - Luo, Yu Ming

AU - Huang, Yi Xiang

AU - Su, Huan Shiang

AU - Lin, Rui Qi

AU - Lin, Yu Hsien

AU - Chang, Kai Hsiang

AU - Shen, Ting Ho

AU - Liu, Chuan Hsi

PY - 2023/3/1

Y1 - 2023/3/1

N2 - We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.

AB - We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.

KW - One-time-programmable (OTP) memory

KW - avalanche-breakdown

KW - embedded memory

KW - impact-ionization

UR - https://www.scopus.com/pages/publications/85147297904

UR - https://www.scopus.com/pages/publications/85147297904#tab=citedBy

U2 - 10.1109/LED.2023.3237626

DO - 10.1109/LED.2023.3237626

M3 - Article

AN - SCOPUS:85147297904

SN - 0741-3106

VL - 44

SP - 404

EP - 407

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

Abstract

Keywords

ASJC Scopus subject areas

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