1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

E. Ray Hsieh; Yu Ming Luo; Yi Xiang Huang; Huan Shiang Su; Rui Qi Lin; Yu Hsien Lin; Kai Hsiang Chang; Ting Ho Shen; Chuan Hsi Liu

doi:10.1109/LED.2023.3237626

1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

E. Ray Hsieh^*, Yu Ming Luo, Yi Xiang Huang, Huan Shiang Su, Rui Qi Lin, Yu Hsien Lin, Kai Hsiang Chang, Ting Ho Shen, Chuan Hsi Liu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.

Original language	English
Pages (from-to)	404-407
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/LED.2023.3237626
Publication status	Published - 2023 Mar 1

Keywords

One-time-programmable (OTP) memory
avalanche-breakdown
embedded memory
impact-ionization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2023.3237626

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title = "1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET",

abstract = "We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.",

keywords = "One-time-programmable (OTP) memory, avalanche-breakdown, embedded memory, impact-ionization",

author = "Hsieh, {E. Ray} and Luo, {Yu Ming} and Huang, {Yi Xiang} and Su, {Huan Shiang} and Lin, {Rui Qi} and Lin, {Yu Hsien} and Chang, {Kai Hsiang} and Shen, {Ting Ho} and Liu, {Chuan Hsi}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2023",

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doi = "10.1109/LED.2023.3237626",

language = "English",

volume = "44",

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AU - Hsieh, E. Ray

AU - Luo, Yu Ming

AU - Huang, Yi Xiang

AU - Su, Huan Shiang

AU - Lin, Rui Qi

AU - Lin, Yu Hsien

AU - Chang, Kai Hsiang

AU - Shen, Ting Ho

AU - Liu, Chuan Hsi

PY - 2023/3/1

Y1 - 2023/3/1

N2 - We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.

AB - We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.

KW - One-time-programmable (OTP) memory

KW - avalanche-breakdown

KW - embedded memory

KW - impact-ionization

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1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

Abstract

Keywords

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