1-Transistor 1-Source/Channel/Drain-Diode (1T1D) One-Time-Programmable Memory in 14-nm FinFET

E. Ray Hsieh*, Yu Ming Luo, Yi Xiang Huang, Huan Shiang Su, Rui Qi Lin, Yu Hsien Lin, Kai Hsiang Chang, Ting Ho Shen, Chuan Hsi Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We present the 1-control-transistor and 1-source/channel/drain-diode(1T1D) one-time-programm- able (OTP) memory cells implemented in 14-nm complementary fin Field-effect-transistors (FinFETs). The OTP cells are fully integrable in the complementary-metal-oxide-semiconductor (CMOS) process without extra litho-masks. The feature size of a unit-cell is 14 F2 ( 0.0502μ2 ), which can be continually shrunk to 3-nm technology. The programming mechanism of the OTP is through the chain-effect induced by the impact-ionization between the channel-drain junction such that the junction structure is destructive, and the diode becomes blown, in terms of an effective open circuit. The pFinFET OTP can be programmed at -2.9 V; 3.1 V for the n-one. Moreover, programmed data can be retained in 200 °C for one month.

Original languageEnglish
Pages (from-to)404-407
Number of pages4
JournalIEEE Electron Device Letters
Volume44
Issue number3
DOIs
Publication statusPublished - 2023 Mar 1

Keywords

  • One-time-programmable (OTP) memory
  • avalanche-breakdown
  • embedded memory
  • impact-ionization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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