3R堆疊二維鐵電材料之合成及其關鍵元件開發(3/3)

The goal of this project is to develop a synthesis method for stable growth of two-dimensional materials with interfacial ferroelectricity and to develop ferroelectric devices based on rhombohedral-stacked (3R) stacking van der Waals materials. The research outcomes of the three-year project have achieved an understanding of the material growth mechanism and successfully demonstrated non-volatile ferroelectric memory devices based on 3R bilayer MoS2. These results were also published in Nature Electronics (7, 29–38, 2024). This is extended to large area growth of 3R MoS2 and expected to connect to the industry.