The goal of this one-year project is the development of millimeter-wave (mm-Wave) high efficiency fully integrated power amplifiers and linearization techniques for 5G NR FR2 applications. The mm-Wave power amplifier (PA) integrated circuits will be designed and implemented on standard complementary metal–oxide–semiconductor (CMOS) and Gallium arsenide (GaAs) process. During this year, a 29.6 dBm 28-30 GHz power amplifier using 0.15 μm GaAs pHEMT has been developed successfully. A compact high efficiency 40.7% 27 GHz power amplifier using transformer power combining technique has been fabricated on 28 nm CMOS process. A 23.9 dBm 28 GHz power amplifier using current combining transformer technique has been fabricated on 0.18 μm CMOS process. A compact high power density 38 GHz power amplifier has been fabricated on 65 nm CMOS process. The measured results agree well with simulation. In addition, linearization techniques have been developed. A cold-mode cascode linearizer is proposed for 28 GHz and 38 GHz power amplifiers to improve the linearity. These chips were fabricated by TSMC and WIN Semiconductors Corporation through the Taiwan Semiconductor Research Institute (TSRI) and have been measured by the Taiwan Semiconductor Research Institute (TSRI). The experimental results have good agreement with simulated results. Some of the achievements have been published in SCI journal and EI international conference papers.
|Effective start/end date||2018/08/01 → 2019/10/31|
- 28 GHz
- Power Amplifier
- High Efficiency
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