INIS
ferroelectric materials
100%
transistors
60%
power
50%
capacitance
40%
speed
40%
polarization
30%
voltage
30%
hafnium oxides
20%
operation
20%
volatility
20%
strains
20%
engineering
20%
leakage
10%
leakage current
10%
passivation
10%
defects
10%
simulation
10%
increasing
10%
plasma
10%
investigations
10%
applications
10%
performance
10%
pulses
10%
doped materials
10%
reliability
10%
market
10%
scaling
10%
density
10%
solutions
10%
internet
10%
Engineering
Field Effect Transistor
100%
Engineering
66%
Nonvolatile Memory
33%
Polarization Effect
33%
Experimental Investigation
33%
Crystallinity
33%
Wearable Electronics
33%
Mobile Communication
33%
Passivation
33%
Switching Speed
33%
Performance Improvement
33%
Flash Memory
33%
Theoretical Investigation
33%
Dopants
33%
Internet-Of-Things
33%
Material Science
Ferroelectric Material
100%
Transistor
60%
Capacitance
40%
Field Effect Transistor
30%
Hafnium
20%
Oxide Compound
20%
Doping (Additives)
10%
Density
10%