Engineering
Nonvolatile Memory
100%
Dopants
100%
Reliability Availability and Maintainability (Reliability Engineering)
100%
Gate Stack
100%
Data Retention
66%
Flash Memory
66%
Polysilicon
33%
Interface Trap
33%
Early Work
33%
Switching State
33%
Plasma Treatment
33%
Design of Experiments
33%
Reliability Issue
33%
Floating Gate
33%
Material System
33%
Device Performance
33%
Resistive
33%
INIS
ferroelectric materials
100%
transistors
62%
devices
50%
defects
50%
doped materials
50%
stacks
37%
retention
25%
films
25%
energy
25%
applications
25%
trapping
25%
reliability
25%
data
25%
volatility
25%
memory devices
25%
scaling
25%
charges
25%
size
12%
leakage current
12%
budgets
12%
thickness
12%
traps
12%
polarization
12%
plasma
12%
fluorine
12%
compatibility
12%
nitrogen
12%
performance
12%
design
12%
power
12%
carriers
12%
interfaces
12%
speed
12%
density
12%
conferences
12%
solutions
12%
Material Science
Ferroelectric Material
100%
Transistor
62%
Doping (Additives)
37%
Charge Trapping
25%
Film
25%
Nanodevice
12%
Density
12%
Ferroelectricity
12%