The goal of this two-year project is to develop the millimeter-wave (mmWave) phased-array transceiver integrated circuits for 5G FR2 applications. The essential components of the phased-array transceiver including phase shifter (PS), variable gain amplifier (VGA), low noise amplifier (LNA), and power amplifier (PA) will be developed using CMOS and GaAs process in the first phase. Then, the key techniques for mmWave phased-array transceiver system including high gain control range low phase variation VGA technique, low insertion loss low phase and amplitude error phase shifter technique, and compact size low dc power consumption circuit technique will be investigated. In these two years, a 28 GHz low RMS phase error phase shifter, a 27-42 GHz broadband and low RMS phase error phase shifter, a 28 GHz low phase variation VGA, a 39 GHz low phase variation VGA, 28 GHz LNAs, and 28 GHz PAs have been designed, simulated, and implemented successfully on CMOS or GaAs process. These chips were be fabricated by TSMC or WIN through the Taiwan Semiconductor Research Institute (TSRI) and have been be measured. The experimental results have good agreement with simulated results. Some of the achievements have be submitted and accepted by SCI journal and EI international conference paper.
|Effective start/end date||2018/08/01 → 2020/10/31|
- Fifth generation mobile communication
- phased-array transceiver
- phase shifter
- variable gain amplifier
- power amplifier
- low noise amplifier
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.