INIS
atoms
11%
capacitance
77%
defects
11%
density
11%
devices
44%
doped materials
100%
dynamics
11%
engineering
11%
fabrication
11%
ferroelectric materials
55%
field effect transistors
55%
films
11%
hysteresis
11%
industry
22%
interfaces
22%
layers
11%
leakage
11%
leakage current
33%
nanostructures
22%
operation
22%
orthorhombic lattices
11%
passivation
11%
performance
11%
plasma
22%
power
11%
reduction
11%
reliability
22%
scaling
44%
semiconductor materials
22%
solutions
11%
stability
11%
stacks
11%
supply
11%
surface treatments
11%
switches
22%
thickness
22%
thin films
11%
transistors
33%
voltage
11%
Material Science
Capacitance
77%
Defect Density
11%
Doping (Additives)
100%
Ferroelectric Material
44%
Ferroelectric Thin Films
11%
Ferroelectricity
11%
Field Effect Transistor
55%
Film Thickness
11%
Surface Treatment
11%
Thermal Stability
11%
Transistor
33%
Engineering
Crystallinity
11%
Defect Density
11%
Device Scaling
11%
Dopants
100%
Engineering
11%
Experimental Result
11%
Field-Effect Transistor
55%
Gate Stack
11%
Improving Device
11%
Interfacial Layer
11%
Internet-Of-Things
11%
Low Power Operation
11%
Nanoscale
22%
Nodes
11%
Passivation
11%
Promising Candidate
11%
Steep Turn
11%
Supply Voltage
11%
Thin Films
11%