基於氫介導自旋電子網絡之多功能神經形態系統

Perpendicular magnetic anisotropy (PMA) thin films have attracted significant attention in ultra-high-density data storage devices due to their excellent thermal stability and reversal stability. These films can maintain their magnetization in high-temperature environments and exhibit a stable magnetic state under the influence of a reverse magnetic field. In this study, researchers deposited Co/Pd multilayers on Al2O3 (0001) substrates using electron beam thermal evaporation. To observe the magnetic and electrical properties generated under different hydrogen pressures, the experiment employed magneto-optical Kerr microscopy and anomalous Hall effect (AHE). By adjusting the hydrogen gas pressure, it was observed that the resistance of the Co/Pd multilayer films gradually increased with increasing hydrogen pressure, 3 while the coercive field and squareness ratio decreased. This phenomenon was primarily caused by the adsorption of hydrogen by the palladium element in the film. Based on the experimental results, it can be concluded that the Co/Pd multilayer films are conducive to detecting and measuring the presence and concentration of hydrogen, making them suitable for next-generation hydrogen sensors and magnetoelectric devices. Additionally, the unique properties of the PMA thin films make them critical elements in magnetic storage technology. Ultra-high-density data storage devices require smaller bit sizes, and PMA films can maintain stable magnetization in extremely small spaces, providing tremendous potential in next-generation magnetic storage devices, sensors, and other related applications. These research findings offer potential options for the development of new high-performance magnetoelectric components.