The conventional transfer process includes coverage of graphene with polymerlayer etching of metal catalyst, etching solution replaced with deionized water,transferred to a target substrate, removal of polymer protective film, and so on.These steps are almost always completed by wet processes. But in addition to the disadvantages of time consuming, loss of metal substrate, and large amount of waste liquid, these process are also easy to cause drawbacks of graphene film damage, liquid impurities contamination, and polymer residue. Moreover, thewater vapor between graphene and target substrate is difficult to be removed completely. Aforementioned disadvantages make the performance of electronic and optoelectronic devices fabricated by wet transfer of graphene still unsatisfactory.This project will develop electrostatic transfer of patterned graphene films using an anode bonding method electrostatic transfer for patterned graphene by an anodic bonding technique. Its principle is that the graphene film is electrostatically adsorbed and transferred to the target substrate with the aid of electric field and temperature, which is expected to improve the above disadvantages induced by wet transfer process, and significantly improve
|Effective start/end date||2019/11/01 → 2020/10/31|
- patterned graphene
- image binarization analysis
- anodic bonding
- electrostatic transfer
- Raman mapping
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