INIS
films
100%
graphene
100%
applications
75%
layers
75%
silicides
75%
interfaces
75%
particles
50%
atoms
25%
temperature range 0273-0400 k
25%
state government
25%
electrons
25%
thickness
25%
devices
25%
enthalpy of formation
25%
morphology
25%
concentration
25%
surfaces
25%
magnetic materials
25%
l-s coupling
25%
nickel silicides
25%
output
25%
chemical shift
25%
energy
25%
transport
25%
probes
25%
taiwan
25%
proposals
25%
anisotropy
25%
information
25%
hysteresis
25%
interactions
25%
roughness
25%
organic semiconductors
25%
switches
25%
annealing
25%
Engineering
Graphene
100%
Si Particle
50%
Magnetoelectronics
50%
Future Application
25%
Anisotropy Energy
25%
Hysteresis Loop
25%
Organic Semiconductor
25%
Spontaneous Formation
25%
Room Temperature
25%
Surface Layers
25%
Modulus of Elasticity
25%
Heterostructures
25%
Probe Point
25%
Resistive
25%
Material Science
Graphene
100%
Silicide
75%
Film
75%
Heterojunction
25%
Anisotropy
25%
Film Thickness
25%
Elastic Moduli
25%
Magnetic Material
25%
Surface (Surface Science)
25%