• 209 Citations
  • 9 h-Index
20052020

Research output per year

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Research Output

  • 209 Citations
  • 9 h-Index
  • 25 Article
  • 2 Conference contribution
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Conference contribution
2020

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

Chen, K. T., Lo, C., Lin, Y. Y., Chueh, C. Y., Chang, C., Siang, G. Y., Tseng, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. H., Liang, H., Chiang, S. H., Liu, J. H., Lin, Y. Y., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Liao, M. H., Chang, S. T. & 2 others, Tseng, Y. Y. & Lee, M. H., 2020 Apr, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9129088. (IEEE International Reliability Physics Symposium Proceedings; vol. 2020-April).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2019

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution