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Fingerprint Dive into the research topics where Pei-hsun Jiang is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 10 Similar Profiles
Thin film transistors Engineering & Materials Science
tunnel junctions Physics & Astronomy
Graphite Chemical Compounds
Amorphous films Engineering & Materials Science
Graphene Engineering & Materials Science
Electric potential Engineering & Materials Science
transistors Physics & Astronomy
gallium oxides Physics & Astronomy

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Research Output 2006 2019

  • 99 Citations
  • 6 h-Index
  • 13 Article
  • 1 Conference contribution

Magnetic patterning through graphene protection against oxidation and interlayer diffusion

Liu, C. M., Wang, W. H., Jiang, P. H. & Lin, W. C., 2019 Aug 21, In : Nanotechnology. 30, 45, 455301.

Research output: Contribution to journalArticle

Graphite
Graphene
Oxidation
Metallic films
Magnetoelectronics
1 Citation (Scopus)

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wang, W. H., Heredia, E., Lyu, S. R., Liu, S. H., Liao, P. Y., Chang, T. C. & Jiang, P., 2018 Feb 1, In : IEEE Electron Device Letters. 39, 2, p. 212-215 4 p., 8234569.

Research output: Contribution to journalArticle

Amorphous films
Thin film transistors
Electric potential
8 Citations (Scopus)

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wang, W. H., Lyu, S. R., Heredia, E., Liu, S. H., Jiang, P. H., Liao, P. Y., Chang, T. C. & Chen, H. M., 2017 Jan 9, In : Applied Physics Letters. 110, 2, 022106.

Research output: Contribution to journalArticle

gallium oxides
zinc oxides
indium
transistors
electric potential

Controllable quantum interference in amorphous in GaZnO thin-film transistors

Wang, W. H., Lyu, S. R., Heredia, E., Liu, S. H., Jiang, P., Liao, P. Y., Chang, T. C. & Chen, H. M., 2017 Jan 1, 24th International Display Workshops, IDW 2017. International Display Workshops, p. 308-311 4 p. (Proceedings of the International Display Workshops; vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thin film transistors
Transistors
Electrons
Temperature
Electric potential
1 Citation (Scopus)

Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO4 thin-film transistors

Wang, W. H., Lyu, S. R., Heredia, E., Liu, S. H., Jiang, P. H., Liao, P. Y. & Chang, T. C., 2017 May, In : Applied Physics Express. 10, 5, 051103.

Research output: Contribution to journalArticle

Amorphous films
Thin film transistors
transistors
conductivity
thin films