INIS
layers
79%
oxides
68%
mosfet
60%
simulation
54%
thickness
50%
metals
50%
finite element method
42%
films
40%
semiconductor materials
40%
field effect transistors
40%
substrates
40%
nitrides
38%
spacers
38%
devices
37%
length
27%
height
24%
deposition
23%
direct current
23%
sputtering
23%
performance
22%
impulse
20%
cutting
20%
muscles
20%
motion
20%
tungsten nitrides
20%
control
20%
dynamics
20%
exoskeleton
20%
titanium oxides
20%
modeling
20%
zirconium nitrides
20%
actuators
20%
chromium nitrides
20%
surveys
20%
carbon steels
20%
cables
20%
pneumatics
20%
shape
20%
power
20%
strains
18%
comparative evaluations
16%
surfaces
16%
limbs
15%
etching
14%
values
13%
plasma
13%
tools
13%
design
11%
residual stresses
10%
calculation methods
10%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
80%
Nitride Compound
56%
Oxide
30%
Taguchi Method
30%
Devices
25%
Type Metal
20%
Magnetron Sputtering
20%
Flexible Substrate
20%
Mechanical Testing
20%
Niobium
20%
Fatigue Behavior
20%
Medium-Carbon Steels
20%
Capacitor
20%
High Power Impulse Magnetron Sputtering
20%
Hot Carrier
20%
Temperature
16%
Fatigue of Materials
15%
Tungsten
13%
Film
13%
Surface Roughness
13%
Carbide
13%
Electrical Property
13%
Mechanical Property
13%
Hardness
11%
Coating
10%
X-Ray Diffraction
10%
Thin Films
10%
Gas
10%
Transistor
10%
Metal
10%
Dielectric Material
6%
Signal-to-Noise Ratio
6%
Surface
6%
Plasma Etching
6%
Polyethylene Terephthalate
6%
Glass
6%
Carrier Mobility
6%
Scanning Electron Microscopy
6%
Niobium Ion
6%
Cutting Tool
6%
Iron Ion
6%
Machining
6%
Annealing
6%
Elastic Moduli
6%
Transition Metal
6%
Transmission Electron Microscopy
6%
Stainless Steel
6%
Irradiation
6%
Solid State Physics
5%
Metallurgy
5%
Physics
Field Effect Transistor
100%
Simulation
66%
Performance
42%
Metal Oxide Semiconductor
40%
Oxide
27%
Taguchi Methods
20%
Laser
20%
Niobium
20%
Capacitor
20%
Steel
20%
Optimization
20%
Region
19%
Fatigue Life
15%
Electrical Properties
13%
Output
13%
Roll
13%
Etching
11%
Ion
10%
Memory
10%
Transistor
10%
Stress Distribution
9%
Width
6%
Carrier Mobility
6%
Images
6%
Physics
6%
Wear
6%
Microscopy
6%
Optical Device
6%
Electric Potential
6%
Threshold Voltage
6%
Solid State
6%
Photovoltage
6%
UV-vis Spectroscopy
6%
Fabrication
6%
Contrast
6%
Light
6%
Integrated Circuit
6%
Annealing
5%
Failure
5%
Fatigue Test
5%
