INIS
annealing
15%
applications
59%
bending
21%
capacitance
47%
capacitors
14%
carbon
21%
comparative evaluations
23%
density
24%
deposition
16%
design
15%
devices
61%
dielectrics
33%
distribution
14%
electroluminescence
20%
emission
15%
ferroelectric materials
100%
field effect transistors
51%
gallium nitrides
18%
germanium silicides
25%
growth
19%
hysteresis
14%
interfaces
30%
junctions
18%
layers
86%
metals
71%
mobility
16%
modeling
20%
operation
25%
oxides
49%
performance
26%
polarization
29%
power
29%
reliability
43%
retention
14%
semiconductor materials
28%
silicon
49%
silicon oxides
37%
speed
14%
stability
14%
stacks
35%
strains
43%
substrates
69%
surfaces
14%
thickness
26%
thin films
32%
transistors
43%
tunnel diodes
24%
tunneling
30%
voltage
55%
zirconium oxides
17%
Material Science
Alloy
14%
Aluminum Nitride
7%
Amorphous Silicon
7%
Bending
23%
Buffer Layer
7%
Capacitance
49%
Capacitor
16%
Carbon Nanotube
15%
Characterization
10%
Chemical Vapor Deposition
8%
Crystalline Material
8%
Density
42%
Devices
56%
Dielectric Material
33%
Diode
32%
Durability
37%
Electrical Property
19%
Electrode
9%
Electroluminescence
22%
Electron Mobility
15%
Electronic Circuit
15%
Electronics
9%
Ferroelectric Material
97%
Ferroelectricity
11%
Field Effect Transistor
78%
Film
12%
Flexible Substrate
18%
Hafnium
9%
Heterojunction
10%
Hole Mobility
8%
Indium
7%
Laser
10%
Light-Emitting Diode
10%
Material
17%
Metal
27%
Metal Oxide
33%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%
Nanocrystalline Silicon
10%
Oxide
37%
Oxide Semiconductor
14%
Polyimide
10%
Silicon
38%
Solidification
8%
Strain
36%
Surface
17%
Switch
14%
Temperature
45%
Thin Films
13%
Thin-Film Transistor
17%
Transistor
25%
Physics
Alloy
9%
Arrays
5%
Capacitance
23%
Capacitor
5%
Cycles
10%
Dielectrics
15%
Diode
9%
Domains
8%
Electric Potential
19%
Emission
6%
Ferroelectricity
49%
Field Effect Transistor
41%
Flexible Electronics
6%
Gaps
5%
Growth
7%
Laser
5%
Light Emitting Diode
8%
Memory
18%
Metal
15%
Metal Oxide Semiconductor
12%
Model
17%
Oxide
13%
Performance
8%
Quantum Dot
6%
Ratios
11%
Region
6%
Semiconductor
5%
Silicon
14%
Silicon Oxide
6%
Simulation
10%
Solidification
6%
Speed
7%
Stacking
8%
Substrates
25%
Technology
12%
Temperature
16%
Thin Films
6%
Tunnel
10%
Ultrahigh Vacuum
5%
Value
5%
Wafer
6%