INIS
annealing
18%
applications
66%
bending
21%
capacitance
47%
capacitors
15%
carbon
24%
comparative evaluations
25%
density
26%
deposition
15%
design
21%
devices
66%
dielectrics
35%
distribution
14%
electroluminescence
21%
emission
16%
ferroelectric materials
100%
field effect transistors
48%
gallium nitrides
16%
germanium silicides
26%
growth
19%
hysteresis
14%
interfaces
32%
junctions
19%
layers
91%
metals
73%
mobility
17%
modeling
19%
operation
25%
oxides
56%
performance
32%
polarization
29%
power
32%
reliability
44%
retention
13%
semiconductor materials
30%
silicon
52%
silicon oxides
37%
simulation
14%
stability
14%
stacks
34%
strains
44%
substrates
70%
surfaces
18%
thickness
34%
thin films
34%
transistors
44%
tunnel diodes
25%
tunneling
32%
voltage
53%
zirconium oxides
16%
Material Science
Aluminum Nitride
6%
Aluminum Oxide
5%
Amorphous Silicon
7%
Annealing
11%
Buffer Layer
9%
Capacitance
47%
Capacitor
11%
Carbon Nanotube
18%
Chemical Vapor Deposition
8%
Density
41%
Deuterium
8%
Dielectric Material
36%
Electroluminescence
18%
Electron Mobility
15%
Electronic Circuit
15%
Epitaxy
5%
Ferroelectric Material
80%
Ferroelectricity
7%
Field Effect Transistor
76%
Film
19%
Germanium
6%
Hafnium
14%
Heterojunction
11%
Hole Mobility
11%
Indium
7%
Light-Emitting Diode
8%
Metal Oxide
29%
Metal-Oxide-Semiconductor Field-Effect Transistor
26%
Nanocrystalline Silicon
10%
Nanosheet
6%
Nitriding
7%
Oxide Compound
40%
Oxide Semiconductor
12%
Permittivity
10%
Polyimide
7%
Quantum Dot
6%
Quantum Well
6%
Silicon
53%
Solar Cell
6%
Solidification
8%
Surface (Surface Science)
20%
Tensile Strain
6%
Thin Films
14%
Thin-Film Transistor
16%
Transistor
25%
Zirconia
8%
Engineering
Band Gap
10%
Carbon Incorporation
6%
Carbon Nanotube
14%
Chemical Vapor Deposition
6%
Current Drain
6%
Data Retention
5%
Dielectrics
9%
Field Effect Transistor
30%
Field-Effect Transistor
21%
Flexible Electronics
9%
Flexible Substrate
12%
Gate Dielectric
7%
Gate Stack
13%
Heterojunctions
6%
Hydrogenated Amorphous Silicon
6%
Interfacial Layer
5%
Light-Emitting Diode
10%
Low-Temperature
11%
Mechanical Strain
13%
Metal Oxide Semiconductor
6%
Metal-Oxide-Semiconductor Field Effect Transistor (Mosfets)
8%
Metal-Oxide-Semiconductor Field-Effect Transistor
7%
Mobility Enhancement
10%
Nanocrystalline
6%
Nonvolatile Memory
12%
Reciprocal Space
6%
Reliability Improvement
6%
Room Temperature
10%
Si Device
5%
Si Substrate
8%
Silicon Oxide
17%
Solar Cell
9%
Structural Reliability
9%
Thin film transistors
10%
Thin Layer
6%
Tunnel
6%
Tunnel Construction
27%
Tunnel field effect transistors
8%
Vapor Deposition
6%
