Engineering & Materials Science
Ferroelectric materials
100%
Field effect transistors
65%
Substrates
45%
Capacitance
38%
Metals
27%
Gate dielectrics
27%
Oxides
27%
Data storage equipment
24%
Durability
23%
Polarization
21%
Silicon
20%
Thin film transistors
18%
Leakage currents
18%
Hole mobility
17%
Nanocrystalline silicon
17%
Electric potential
16%
Annealing
16%
Diodes
16%
Electroluminescence
16%
Carbon
15%
Threshold voltage
14%
Tunnel field effect transistors
14%
Ferroelectricity
13%
Temperature
13%
Drain current
13%
Flexible displays
13%
Oxide semiconductors
13%
Heterojunctions
13%
Transistors
13%
Flexible electronics
13%
High electron mobility transistors
12%
Plasmas
12%
Energy gap
12%
Hot Temperature
12%
Capacitors
11%
Permittivity
11%
Demonstrations
11%
Buffer layers
10%
Electron mobility
10%
Silicon oxides
10%
Three dimensional integrated circuits
10%
Polysilicon
10%
Polyimides
10%
Surface roughness
10%
Hafnium
10%
FinFET
9%
Doping (additives)
9%
Hysteresis
9%
Nitridation
9%
MOSFET devices
9%
Chemical Compounds
Voltage
29%
Field Effect
28%
Tunneling
26%
Dielectric Material
26%
Antiferroelectricity
22%
Strain
20%
Polarization
18%
Oxide
18%
Leakage Current
18%
Capacitor
16%
Application
15%
Hysteresis
12%
Compound Mobility
11%
Annealing
11%
Electron Mobility
10%
Threading Dislocation
10%
Semiconductor
9%
Drain Current
9%
Multilayer
9%
Carbon Nanotube
9%
Metal
8%
Hole Mobility
8%
Electroluminescence
8%
Buffer Solution
8%
Metal Oxide
8%
Band Gap
7%
Nonconductor
7%
Alloy
7%
Epitaxial Growth
7%
Simulation
7%
Dielectric Constant
7%
Flicker Noise
6%
Laser Annealing
6%
Electrical Property
6%
Liquid Film
6%
Tetragonal Space Group
6%
Surface
6%
Carbon Atom
6%
Solidification
6%
Chemical Vapour Deposition
5%
Wavelength
5%
Plasma
5%
Charge Density Wave
5%
Resistance
5%
Hafnium Atom
5%
Physics & Astronomy
field effect transistors
42%
capacitance
27%
metal oxide semiconductors
20%
electroluminescence
18%
silicon
17%
metal oxides
16%
endurance
14%
diodes
13%
transistors
12%
electric potential
12%
oxides
11%
augmentation
9%
cycles
9%
carbon
9%
thin films
9%
hafnium oxides
9%
switches
9%
MIS (semiconductors)
8%
leakage
8%
hole mobility
8%
tunnels
7%
light emitting diodes
7%
performance
7%
annealing
6%
hysteresis
6%
traps
6%
ferroelectricity
6%
buffers
6%
permittivity
5%
vapor deposition
5%
threshold voltage
5%
high electron mobility transistors
5%
polarization
5%
current density
5%
nitrogen
5%
amorphous silicon
5%
room temperature
5%
ultrahigh vacuum
5%
fins
5%
capacitors
5%