Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
-
SDG 7 Affordable and Clean Energy
Fingerprint
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Projects
- 5 Finished
-
彷生應用之可高密度堆疊鐵電穿隧接面記憶體陣列開發
Lee, M.-H. (PI)
2022/08/01 → 2025/07/31
Project: Government Ministry › Ministry of Science and Technology
-
子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
Lee, M.-H. (PI)
2021/05/01 → 2022/04/30
Project: Government Ministry › Ministry of Science and Technology
-
子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
Lee, M.-H. (PI)
2020/05/01 → 2021/10/31
Project: Government Ministry › Ministry of Science and Technology
-
子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
Lee, M.-H. (PI)
2019/05/01 → 2020/10/31
Project: Government Ministry › Ministry of Science and Technology
-
子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
Lee, M.-H. (PI)
2018/05/01 → 2019/04/30
Project: Government Ministry › Ministry of Science and Technology
-
High Dielectric Constant of HfO2 Technology for Memory Applications
Lee, M. H., Luo, Z. F., Liao, C. Y., Hsiang, K. Y., Lee, J. Y., Chang, F. S., Chang, Y. T., Liu, C. H. & Cheng, C. C., 2025, 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025. Institute of Electrical and Electronics Engineers Inc., (9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
-
Nonvolatile and Volatile Memory Fusion of Antiferroelectric-like Hafnium-Zirconium Oxide for Multi-Bit Access and Endurance >1012 Cycles by Alternating Polarity Cycling Recovery and Spatially Resolved Evolution
Liu, C. H., Hsiang, K. Y., Li, Z. X., Chang, F. S., Lou, Z. F., Lee, J. Y., Liu, C. W., Su, P., Hou, T. H. & Lee, M. H., 2025 Mar 5, In: ACS Applied Materials and Interfaces. 17, 9, p. 14342-14349 8 p.Research output: Contribution to journal › Article › peer-review
Open Access4 Link opens in a new tab Citations (Scopus) -
Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide
Yang, T. H., Liang, B. W., Hu, H. C., Chen, F. X., Ho, S. Z., Chang, W. H., Yang, L., Lo, H. C., Kuo, T. H., Chen, J. H., Lin, P. Y., Simbulan, K. B., Luo, Z. F., Chang, A. C., Kuo, Y. H., Ku, Y. S., Chen, Y. C., Huang, Y. J., Chang, Y. C. & Chiang, Y. F. & 7 others, , 2024 Jan, In: Nature Electronics. 7, 1, p. 29-38 10 p.Research output: Contribution to journal › Article › peer-review
88 Link opens in a new tab Citations (Scopus) -
Highly Reliable and High-Yield 1.2V HfZrOx FRAM and its Physical Origin via Micrometer-Scale Nanocrystalline Domain Analysis
Lin, Y. D., Cho, C. Y., Su, J. W., Wei, Y. H., Hung, L. Y., Chang, P. H., Hsu, C. C., Yeh, P. C., Lee, M. H., Hou, T. H., Sheu, S. S., Lo, W. C. & Chang, S. C., 2024, 2024 IEEE International Electron Devices Meeting, IEDM 2024. Institute of Electrical and Electronics Engineers Inc., (Technical Digest - International Electron Devices Meeting, IEDM).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
-
Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2by Optimizing TiNxInterfacial Capping Layer and Its Fatigue Mechanism
Senapati, A., Lou, Z. F., Lee, J. Y., Chen, Y. P., Huang, S. Y., Maikap, S., Lee, M. H. & Liu, C. W., 2024 Apr 1, In: IEEE Electron Device Letters. 45, 4, p. 673-676 4 p.Research output: Contribution to journal › Article › peer-review
6 Link opens in a new tab Citations (Scopus)