Projects per year
Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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SDG 7 Affordable and Clean Energy
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Dive into the research topics where Min-Hung Lee is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Projects
- 5 Finished
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彷生應用之可高密度堆疊鐵電穿隧接面記憶體陣列開發
Lee, M.-H. (PI)
2022/08/01 → 2025/07/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
Lee, M.-H. (PI)
2021/05/01 → 2022/04/30
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
Lee, M.-H. (PI)
2020/05/01 → 2021/10/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
Lee, M.-H. (PI)
2019/05/01 → 2020/10/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
Lee, M.-H. (PI)
2018/05/01 → 2019/04/30
Project: Government Ministry › Ministry of Science and Technology
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3-D Vertical Ferroelectric FETs for Nonvolatile Memory Design With Prolonged Retention Mechanism and Triple-Level Cell (TLC) by Voltage/Width Modulation
Lee, J. Y., Lou, Z. F., Aich, A., Lin, Y. D., Maikap, S., Cheng, I. C., Chen, T. & Lee, M. H., 2026 Jun 1, In: IEEE Transactions on Electron Devices. 73, 6, p. 3551-3556 6 p.Research output: Contribution to journal › Article › peer-review
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A Compact Model for Charge-Based Voltage Readout in Multi-Level Capacitive Memories
Januar, M., Lou, Z. F. & Lee, M. H., 2026, 2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., (2026 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2026 - Proceedings of Technical Papers).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Angle-Dependent Conductivity in MoS2 Field-Effect Transistors with Bi Contacts
Lo, H. C., Yang, T. H., Alforja, E., Liu, M. H., Lee, M. H. & Lan, Y. W., 2026, 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Antiferroelectric-Based Memcapacitor and Strategy for Non-Destructive Read Operation by Endurance Recovery
Liu, C. H., Hsiang, K. Y., Chang, F. S., Januar, M., Chang, Y. T., Liu, C. W., Hou, T. H. & Lee, M. H., 2026 Jun 1, In: IEEE Electron Device Letters. 47, 6, p. 1101-1104 4 p.Research output: Contribution to journal › Article › peer-review
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Anti-ferroelectric HfO2 Perspective Higher-K for Memory and Logic Applications
Lee, M. H., Luo, Z. F., Lee, J. Y., Liu, C. H., Chang, F. S., Chang, Y. T. & Cheng, C. C., 2026, 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution