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Fingerprint Dive into the research topics where Min-Hung Lee is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

Substrates Engineering & Materials Science
Field effect transistors Engineering & Materials Science
field effect transistors Physics & Astronomy
Capacitance Engineering & Materials Science
Oxides Chemical Compounds
Gate dielectrics Engineering & Materials Science
electroluminescence Physics & Astronomy
metal oxide semiconductors Physics & Astronomy

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Research Output 1998 2018

1 Citation (Scopus)

Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices

Liao, M. H., Huang, K. C., Tsai, F. A., Liu, C. Y., Lien, C. & Lee, M-H., 2018 Jan 1, In : AIP Advances. 8, 1, 015020.

Research output: Contribution to journalArticle

bismuth tellurides
electric power
electrical resistivity
thin films
film thickness

Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

Lee, M-H., Liao, M. H., Tai, C. W. & Chang, S. T., 2017 Jan 17, FTC 2016 - Proceedings of Future Technologies Conference. Institute of Electrical and Electronics Engineers Inc., p. 1327-1330 4 p. 7821775. (FTC 2016 - Proceedings of Future Technologies Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

CAD
Heterojunctions
Computer aided design
Solar cells
energy
4 Citations (Scopus)

In 0.18 Al 0.82 N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

Chen, P. G., Tang, M., Liao, M. H. & Lee, M-H., 2017 Mar 1, In : Solid-State Electronics. 129, p. 206-209 4 p.

Research output: Contribution to journalLetter

Management information systems
MIS (semiconductors)
High electron mobility transistors
high electron mobility transistors
Substrates
1 Citation (Scopus)

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

Lee, M-H., Chen, P. G., Fan, S. T., Kuo, C. Y., Chen, H. H., Gu, S. S., Chou, Y. C., Tang, C. H., Hong, R. C., Wang, Z. Y., Liao, M. H., Li, K. S., Chen, M. C. & Liu, C. W., 2017 Jun 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942466. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Ferroelectric materials
Capacitance
Oxides
Hysteresis
37 Citations (Scopus)

Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

Lee, M-H., Fan, S. T., Tang, C. H., Chen, P. G., Chou, Y. C., Chen, H. H., Kuo, J. Y., Xie, M. J., Liu, S. N., Liao, M. H., Jong, C. A., Li, K. S., Chen, M. C. & Liu, C. W., 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 12.1.1-12.1.4 7838400. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Field effect transistors
Ferroelectric materials
Capacitance
field effect transistors
capacitance