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Min-Hung Lee

  • 1414 Citations
  • 23 h-Index
19982018
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Substrates Engineering & Materials Science
Field effect transistors Engineering & Materials Science
field effect transistors Physics & Astronomy
Capacitance Engineering & Materials Science
Oxides Chemical Compounds
Gate dielectrics Engineering & Materials Science
electroluminescence Physics & Astronomy
metal oxide semiconductors Physics & Astronomy

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Research Output 1998 2018

1 Citation (Scopus)

Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices

Liao, M. H., Huang, K. C., Tsai, F. A., Liu, C. Y., Lien, C. & Lee, M-H., 2018 Jan 1, In : AIP Advances. 8, 1, 015020.

Research output: Contribution to journal › Article

bismuth tellurides
electric power
electrical resistivity
thin films
film thickness

Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

Lee, M-H., Liao, M. H., Tai, C. W. & Chang, S. T., 2017 Jan 17, FTC 2016 - Proceedings of Future Technologies Conference. Institute of Electrical and Electronics Engineers Inc., p. 1327-1330 4 p. 7821775. (FTC 2016 - Proceedings of Future Technologies Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

CAD
Heterojunctions
Computer aided design
Solar cells
energy
4 Citations (Scopus)

In 0.18 Al 0.82 N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

Chen, P. G., Tang, M., Liao, M. H. & Lee, M-H., 2017 Mar 1, In : Solid-State Electronics. 129, p. 206-209 4 p.

Research output: Contribution to journal › Letter

Management information systems
MIS (semiconductors)
High electron mobility transistors
high electron mobility transistors
Substrates

Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

Lee, M-H., Chen, P. G., Fan, S. T., Kuo, C. Y., Chen, H. H., Gu, S. S., Chou, Y. C., Tang, C. H., Hong, R. C., Wang, Z. Y., Liao, M. H., Li, K. S., Chen, M. C. & Liu, C. W., 2017 Jun 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942466. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Field effect transistors
Ferroelectric materials
Capacitance
Oxides
Hysteresis
35 Citations (Scopus)

Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

Lee, M-H., Fan, S. T., Tang, C. H., Chen, P. G., Chou, Y. C., Chen, H. H., Kuo, J. Y., Xie, M. J., Liu, S. N., Liao, M. H., Jong, C. A., Li, K. S., Chen, M. C. & Liu, C. W., 2017 Jan 31, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., p. 12.1.1-12.1.4 7838400. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Field effect transistors
Ferroelectric materials
Capacitance
field effect transistors
capacitance