Projects per year
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Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Dive into the research topics where Min-Hung Lee is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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彷生應用之可高密度堆疊鐵電穿隧接面記憶體陣列開發
2022/08/01 → 2025/07/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
2021/05/01 → 2022/04/30
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
2020/05/01 → 2021/10/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
2019/05/01 → 2020/10/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
2018/05/01 → 2019/04/30
Project: Government Ministry › Ministry of Science and Technology
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Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory
Lou, Z. F., Liao, C. Y., Hsiang, K. Y., Lin, C. Y., Lin, Y. D., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Hou, T. H., Tang, Y. T. & Lee, M. H., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Correlation between Access Polarization and High Endurance (~ 1012cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2
Hsiang, K. Y., Liao, C. Y., Lin, Y. Y., Lou, Z. F., Lin, C. Y., Lee, J. Y., Chang, F. S., Li, Z. X., Tseng, H. C., Wang, C. C., Ray, W. C., Hou, T. H., Chen, T. C., Chang, C. S. & Lee, M. H., 2022, 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. P91-P94 (IEEE International Reliability Physics Symposium Proceedings; vol. 2022-March).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2 Citations (Scopus) -
Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture
Hsiang, K. Y., Liao, C. Y., Liu, J. H., Lin, C. Y., Lee, J. Y., Lou, Z. F., Chang, F. S., Ray, W. C., Li, Z. X., Tseng, H. C., Wang, C. C., Liao, M. H., Hou, T. H. & Lee, M. H., 2022 Nov 1, In: IEEE Electron Device Letters. 43, 11, p. 1850-1853 4 p.Research output: Contribution to journal › Article › peer-review
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Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET
Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Ray, W. C., Chang, F. S., Wang, C. C., Li, Z. X., Tseng, H. C., Lee, J. Y., Chen, P. H., Tsai, J. H., Chen, P. G. & Lee, M. H., 2022, 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. Institute of Electrical and Electronics Engineers Inc., (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM
Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Tseng, H. C., Lin, C. Y., Li, Z. X., Hsieh, F. C., Wang, C. C., Chang, F. S., Ray, W. C., Tseng, Y. Y., Chang, S. T., Chen, T. C. & Lee, M. H., 2022, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., p. 393-394 2 p. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2022-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2 Citations (Scopus)