Min-Hung Lee

Undergraduate Program of Electro-Optical Engineering

Emailmhlee@ntnu.edu.tw

Source: Scopus
Calculated based on no. of publications stored in Pure and citations from Scopus

Research output per year

If you made any changes in Pure these will be visible here soon.

Fingerprint

Dive into the research topics where Min-Hung Lee is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

1 Similar Profiles

Network

Recent external collaboration on country level. Dive into details by clicking on the dots.

1946 Citations
25 h-Index
117 Article
47 Conference contribution
7 Conference article
6 Paper
More
- 2 Review article
- 1 Letter

Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films
Luo, J. D., Yeh, Y. T., Lai, Y. Y., Wu, C. F., Chung, H. T., Li, Y. S., Chuang, K. C., Li, W. S., Chen, P. G., Lee, M. H. & Cheng, H. C., 2020 Jun, In: Vacuum. 176, 109317.
Research output: Contribution to journal › Article › peer-review
Double Layers Omega FETs with Ferroelectric HfZrO₂ for One-Transistor Memory
Chen, K. T., Lo, C., Lin, Y. Y., Chueh, C. Y., Chang, C., Siang, G. Y., Tseng, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. H., Liang, H., Chiang, S. H., Liu, J. H., Lin, Y. Y., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Liao, M. H., Chang, S. T. & 2 others, Tseng, Y. Y. & Lee, M. H., 2020 Apr, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9129088. (IEEE International Reliability Physics Symposium Proceedings; vol. 2020-April).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
1 Citation (Scopus)
Ferroelectric HfZrO₂with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training
Hsiang, K. Y., Liao, C. Y., Chen, K. T., Lin, Y. Y., Chueh, C. Y., Chang, C., Tseng, Y. J., Yang, Y. J., Chang, S. T., Liao, M. H., Hou, T. H., Wu, C. H., Ho, C. C., Chiu, J. P., Chang, C. & Lee, M. H., 2020 Oct, In: IEEE Transactions on Electron Devices. 67, 10, p. 4201-4207 7 p., 9180313.
Research output: Contribution to journal › Article › peer-review
Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂
Chen, K. T., Liao, C. Y., Hsiang, K. Y., Chang, S. H., Hsieh, F. J., Liang, H., Chiang, S. H., Liu, J. H., Li, K. S., Chang, S. T. & Lee, M. H., 2020 Oct, In: Semiconductor Science and Technology. 35, 12, 125011.
Research output: Contribution to journal › Article › peer-review
The Demonstration of 3-D Bi_2.0Te_2.7Se_0.3/Bi_0.4Te_3.0Sb_1.6 Thermoelectric Devices by Ionized Sputter System
Liao, M. H., Huang, K. C., Su, W. J., Chen, S. C. & Lee, M. H., 2020 Jan, In: IEEE Transactions on Electron Devices. 67, 1, p. 406-408 3 p., 8906168.
Research output: Contribution to journal › Article › peer-review

Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

Ferroelectric HfZrO2with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2

The Demonstration of 3-D Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 Thermoelectric Devices by Ionized Sputter System

Double Layers Omega FETs with Ferroelectric HfZrO₂ for One-Transistor Memory

Ferroelectric HfZrO₂with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO₂

The Demonstration of 3-D Bi_2.0Te_2.7Se_0.3/Bi_0.4Te_3.0Sb_1.6 Thermoelectric Devices by Ionized Sputter System