Projects per year
Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Dive into the research topics where Min-Hung Lee is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Projects
- 4 Finished
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
2021/05/01 → 2022/04/30
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
2020/05/01 → 2021/10/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
2019/05/01 → 2020/10/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
2018/05/01 → 2019/04/30
Project: Government Ministry › Ministry of Science and Technology
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Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory
Lou, Z. F., Liao, C. Y., Hsiang, K. Y., Lin, C. Y., Lin, Y. D., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Hou, T. H., Tang, Y. T. & Lee, M. H., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Correlation between Access Polarization and High Endurance (~ 1012cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2
Hsiang, K. Y., Liao, C. Y., Lin, Y. Y., Lou, Z. F., Lin, C. Y., Lee, J. Y., Chang, F. S., Li, Z. X., Tseng, H. C., Wang, C. C., Ray, W. C., Hou, T. H., Chen, T. C., Chang, C. S. & Lee, M. H., 2022, 2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. P91-P94 (IEEE International Reliability Physics Symposium Proceedings; vol. 2022-March).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)
Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Tseng, Y. J., Tseng, H. C., Li, Z. X., Ray, W. C., Chang, F. S., Wang, C. C., Chen, T. C., Chang, C. S. & Lee, M. H., 2022 Jun 1, In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 69, 6, p. 2214-2221 8 p.Research output: Contribution to journal › Article › peer-review
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The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology
Yen, C. M., Chang, S. Y., Chen, K. C., Feng, Y. J., Chen, L. H., Liao, B. Z., Lee, M. H., Chen, S. C. & Liao, M. H., 2022 Mar 1, In: IEEE Transactions on Electron Devices. 69, 3, p. 1600-1603 4 p.Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus) -
Atomic Layer Deposition Plasma-Based Undoped-HfO2Ferroelectric FETs for Non-Volatile Memory
Luo, J. D., Lai, Y. Y., Hsiang, K. Y., Wu, C. F., Chung, H. T., Li, W. S., Liao, C. Y., Chen, P. G., Chen, K. N., Lee, M. H. & Cheng, H. C., 2021 Aug, In: IEEE Electron Device Letters. 42, 8, p. 1152-1155 4 p., 9465799.Research output: Contribution to journal › Article › peer-review
2 Citations (Scopus)