Projects per year
Personal profile
Expertise related to UN Sustainable Development Goals
In 2015, UN member states agreed to 17 global Sustainable Development Goals (SDGs) to end poverty, protect the planet and ensure prosperity for all. This person’s work contributes towards the following SDG(s):
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Collaborations and top research areas from the last five years
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彷生應用之可高密度堆疊鐵電穿隧接面記憶體陣列開發
2022/08/01 → 2025/07/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
2021/05/01 → 2022/04/30
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
2020/05/01 → 2021/10/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(2/2)
2019/05/01 → 2020/10/31
Project: Government Ministry › Ministry of Science and Technology
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子計畫二：鐵電鉿基氧化物之負電容特性研究及相關應用(1/2)
2018/05/01 → 2019/04/30
Project: Government Ministry › Ministry of Science and Technology
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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs
Lee, J. Y., Chang, F. S., Hsiang, K. Y., Chen, P. H., Luo, Z. F., Li, Z. X., Tsai, J. H., Liu, C. W. & Lee, M. H., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2023-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2 Citations (Scopus) -
Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO_2 for Quantum Computing Applications
Hsiang, K. Y., Lee, J. Y., Lou, Z. F., Chang, F. S., Li, Z. X., Liu, C. W., Hou, T. H., Su, P. & Lee, M. H., 2023, 2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., (IEEE International Reliability Physics Symposium Proceedings; vol. 2023-March).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2 Citations (Scopus) -
Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM
Hsiang, K. Y., Lee, J. Y., Lou, Z. F., Chang, F. S., Chen, Y. C., Li, Z. X., Liao, M. H., Liu, C. W., Hou, T. H., Su, P. & Lee, M. H., 2023 Apr 1, In: IEEE Transactions on Electron Devices. 70, 4, p. 2142-2146 5 p.Research output: Contribution to journal › Article › peer-review
Open Access4 Citations (Scopus) -
FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations
Hsiang, K. Y., Lee, J. Y., Chang, F. S., Lou, Z. F., Li, Z. X., Li, Z. H., Chen, J. H., Liu, C. W., Hou, T. H. & Lee, M. H., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2023-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
4 Citations (Scopus) -
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles
Chen, Y. R., Liu, Y. C., Zhao, Z., Hsieh, W. H., Lee, J. Y., Tu, C. T., Huang, B. W., Wang, J. F., Chueh, S. J., Xing, Y., Chen, G. H., Chou, H. C., Woo, D. S., Lee, M. H. & Liu, C. W., 2023, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2023-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
4 Citations (Scopus)