• 1819 Citations
  • 25 h-Index
19982020

Research output per year

If you made any changes in Pure these will be visible here soon.

Fingerprint Dive into the research topics where Min-Hung Lee is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 1 Similar Profiles

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output

The Demonstration of 3-D Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 Thermoelectric Devices by Ionized Sputter System

Liao, M. H., Huang, K. C., Su, W. J., Chen, S. C. & Lee, M. H., 2020 Jan, In : IEEE Transactions on Electron Devices. 67, 1, p. 406-408 3 p., 8906168.

Research output: Contribution to journalArticle

  • Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

    Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs

    Chen, K. T., Chou, Y. C., Siang, G. Y., Chen, H. Y., Lo, C., Liao, C. Y., Chang, S. T. & Lee, M. H., 2019 Jul 1, In : Applied Physics Express. 12, 7, 071003.

    Research output: Contribution to journalArticle

  • Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

    Lee, M. H., Chen, K. T., Liao, C. Y., Gu, S. S., Siang, G. Y., Chou, Y. C., Chen, H. Y., Le, J., Hong, R. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Tang, M., Lin, Y. D., Lee, H. Y., Li, K. S. & Liu, C. W., 2019 Jan 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 31.8.1-31.8.4 8614510. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2018-December).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • 6 Citations (Scopus)

    Ferroelectric HfZrO2 FETs for steep switch onset

    Chen, K. T., Liao, C. Y., Chen, H. Y., Lo, C., Siang, G. Y., Lin, Y. Y., Tseng, Y. J., Chang, C., Chueh, C. Y., Yang, Y. J., Liao, M. H., Li, K. S., Chang, S. T. & Lee, M. H., 2019 Jul 15, In : Microelectronic Engineering. 215, 110991.

    Research output: Contribution to journalArticle