Min-Hung Lee

Undergraduate Program of Electro-Optical Engineering

Emailmhlee@ntnu.edu.tw

Source: Scopus
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2003 Citations
25 h-Index
120 Article
48 Conference contribution
7 Conference article
6 Paper
More
- 2 Review article
- 1 Letter

Ferroelectric undoped HfO_xcapacitor with symmetric synaptic for neural network accelerator
Luo, J. D., Lai, Y. Y., Hsiang, K. Y., Wu, C. F., Yeh, Y. T., Chung, H. T., Li, Y. S., Chuang, K. C., Li, W. S., Liao, C. Y., Chen, P. G., Chen, K. N., Lee, M. H. & Cheng, H. C., 2021 Mar, In: IEEE Transactions on Electron Devices. 68, 3, p. 1374-1377 4 p., 9339849.
Research output: Contribution to journal › Article › peer-review
Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory
Liao, C. Y., Hsiang, K. Y., Hsieh, F. C., Chiang, S. H., Chang, S. H., Liu, J. H., Lou, C. F., Lin, C. Y., Chen, T. C., Changa, C. S. & Lee, M. H., 2021, (Accepted/In press) In: IEEE Electron Device Letters. 42, 4, p. 617-620 4 p., 9358194.
Research output: Contribution to journal › Article › peer-review
Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films
Luo, J. D., Yeh, Y. T., Lai, Y. Y., Wu, C. F., Chung, H. T., Li, Y. S., Chuang, K. C., Li, W. S., Chen, P. G., Lee, M. H. & Cheng, H. C., 2020 Jun, In: Vacuum. 176, 109317.
Research output: Contribution to journal › Article › peer-review
Double Layers Omega FETs with Ferroelectric HfZrO₂ for One-Transistor Memory
Chen, K. T., Lo, C., Lin, Y. Y., Chueh, C. Y., Chang, C., Siang, G. Y., Tseng, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. H., Liang, H., Chiang, S. H., Liu, J. H., Lin, Y. Y., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Liao, M. H., Chang, S. T. & 2 others, Tseng, Y. Y. & Lee, M. H., 2020 Apr, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9129088. (IEEE International Reliability Physics Symposium Proceedings; vol. 2020-April).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
2 Citations (Scopus)
Ferroelectric HfZrO₂with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training
Hsiang, K. Y., Liao, C. Y., Chen, K. T., Lin, Y. Y., Chueh, C. Y., Chang, C., Tseng, Y. J., Yang, Y. J., Chang, S. T., Liao, M. H., Hou, T. H., Wu, C. H., Ho, C. C., Chiu, J. P., Chang, C. & Lee, M. H., 2020 Oct, In: IEEE Transactions on Electron Devices. 67, 10, p. 4201-4207 7 p., 9180313.
Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus)

Ferroelectric undoped HfOxcapacitor with symmetric synaptic for neural network accelerator

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films

Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

Ferroelectric HfZrO2with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

Ferroelectric undoped HfO_xcapacitor with symmetric synaptic for neural network accelerator

Double Layers Omega FETs with Ferroelectric HfZrO₂ for One-Transistor Memory

Ferroelectric HfZrO₂with Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training