Hsiu-Chuan Lee

Department of English

Emailhclee@ntnu.edu.tw

Source: Scopus
Calculated based on no. of publications stored in Pure and citations from Scopus

Research activity per year

If you made any changes in Pure these will be visible here soon.

Fingerprint

Dive into the research topics where Hsiu-Chuan Lee is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

6 Similar Profiles

Network

Recent external collaboration on country level. Dive into details by clicking on the dots or

7 Citations
1 h-Index
14 Article
5 Review article
1 Conference contribution
1 Comment/debate

CHIMPS2: Survey description and 12CO emission in the Galactic Centre
Eden, D. J., Moore, T. J. T., Currie, M. J., Rigby, A. J., Rosolowsky, E., Su, Y., Kim, K. T., Parsons, H., Morata, O., Chen, H. R., Minamidani, T., Park, G., Ragan, S. E., Urquhart, J. S., Rani, R., Tahani, K., Billington, S. J., Deb, S., Figura, C., Fujiyoshi, T. & 86 others, Joncas, G., Liao, L. W., Liu, T., Ma, H., Tuan-Anh, P., Yun, H. S., Zhang, S., Zhu, M., Henshaw, J. D., Longmore, S. N., Kobayashi, M. I. N., Thompson, M. A., Ao, Y., Campbell-White, J., Ching, T. C., Chung, E. J., Duarte-Cabral, A., Fich, M., Gao, Y., Graves, S. F., Jiang, X. J., Kemper, F., Kuan, Y. J., Kwon, W., Lee, C. W., Lee, J. E., Liu, M., Peñaloza, C. H., Peretto, N., Phuong, N. T., Pineda, J. E., Plume, R., Puspitaningrum, E., Samal, M. R., Soam, A., Sun, Y., Tang, X. D., Traficante, A., White, G. J., Yan, C. H., Yang, A. Y., Yuan, J., Yue, N., Bemis, A., Brunt, C. M., Chen, Z., Cho, J., Clark, P. C., Cyganowski, C. J., Friberg, P., Fuller, G. A., Han, I., Hoare, M. G., Izumi, N., Kim, H. J., Kim, J., Kim, S., Koch, E. W., Kuno, N., Lacialle, K. M., Lai, S. P., Lee, H., Lee, Y. H., Li, D. L., Liu, S. Y., Mairs, S., Pan, Z., Qian, L., Scicluna, P., Shi, C. S., Shi, H., Srinivasan, S., Tan, Q. H., Thomas, H. S., Torii, K., Trejo, A., Umemoto, T., Violino, G., Wallström, S., Wang, B., Wu, Y., Yuan, L., Zhang, C., Zhang, M., Zhou, C. & Zhou, J. J., 2020 Nov 1, In: Monthly Notices of the Royal Astronomical Society. 498, 4, p. 5936-5951 16 p.
Research output: Contribution to journal › Review article › peer-review
1 Citation (Scopus)
Diamonds at the margin of empires: ‘baseball complex’ in the Japanese American internment and colonized Taiwan
Lee, H. C., 2020, (Accepted/In press) In: Cultural Studies.
Research output: Contribution to journal › Article › peer-review
3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x
Lin, Y. D., Tang, Y. T., Sheu, S. S., Hou, T. H., Lo, W. C., Lee, M. H., Chang, M. F., King, Y. C., Lin, C. J., Lee, H. Y., Yeh, P. C., Yang, H. Y., Yeh, P. S., Wang, C. Y., Su, J. W. & Li, S. H., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993504. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
4 Citations (Scopus)
Feast of Splendor: Chinese American Literary Studies in Taiwan, edited by Shan Te-hsing
Lee, H. C., 2019 Jan 1, In: Sun Yat-sen Journal of Humanities. 46, 46, p. 145-151 7 p.
Research output: Contribution to journal › Review article › peer-review
Writing, history, and music in do not say we have nothing: A conversation with madeleine thien
Lee, H. C., 2019 Jan 1, In: Canadian Literature. 2019, 238, p. 13-28 16 p.
Research output: Contribution to journal › Comment/debate › peer-review

CHIMPS2: Survey description and 12CO emission in the Galactic Centre

Diamonds at the margin of empires: ‘baseball complex’ in the Japanese American internment and colonized Taiwan

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Feast of Splendor: Chinese American Literary Studies in Taiwan, edited by Shan Te-hsing

Writing, history, and music in do not say we have nothing: A conversation with madeleine thien

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrO_x