• 1646 Citations
  • 21 h-Index
20072020

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2019

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

Lee, Y. T., Chen, H. H., Tung, Y. C., Shih, B. Y., Hsiung, S. Y., Lee, T. M., Hsu, C. C., Liu, C., Hsu, H. H., Chang, C. Y., Lan, Y. P. & Cheng, C. H., 2019 Jun, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8753958. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

Liu, K. W., Chen, H. H., Huang, Z. Y., Wang, W. C., Fan, Y. C., Lin, C. L., Hsu, C. C., Fan, C. C., Hsu, H. H., Chang, C. Y., Lin, C. C. & Cheng, C. H., 2019 Jun, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8754036. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

Liu, C., Chen, H. H., Hsu, C. C., Fan, C. C., Hsu, H. H. & Cheng, C. H., 2019 Jun, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T224-T225 8776482. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

Shang, Z. W., Ma, J., Liu, W. D., Zheng, Z. W. & Cheng, C. H., 2019 Oct, 2019 8th International Symposium on Next Generation Electronics, ISNE 2019. Institute of Electrical and Electronics Engineers Inc., 8896500. (2019 8th International Symposium on Next Generation Electronics, ISNE 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2018

Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain

Fan, C. C., Cheng, C. H., Tu, C. Y., Liu, C., Chen, W. H., Chang, T. J. & Chang, C. Y., 2018 Oct 25, 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., p. 139-140 2 p. 8510640. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage

Fan, C. C., Cheng, C. H., Chen, Y. R., Liu, C. & Chang, C. Y., 2018 Jan 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., p. 23.2.1-23.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

High speed negative capacitance ferroelectric memory

Chang, C. Y., Fan, C. C., Liu, C., Chiu, Y. C. & Cheng, C. H., 2018 Jan 8, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Tang, T-A. & Hong, Z. (eds.). IEEE Computer Society, p. 1-5 5 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

Fan, C. C., Tu, C. Y., Lin, M. H., Chang, C. Y., Cheng, C. H., Chen, Y. L., Liou, G. L., Liu, C., Chou, W. C. & Hsu, H. H., 2018 May 25, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PTX.81-PTX.85 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

Liu, C., Fan, C. C., Tseng, C. Y., Hsu, H. H., Cheng, C. H., Chen, Y. L., Chang, C. Y., Chou, W. C., Lin, C. L., Fan, Y. C. & Lee, T. M., 2018 Dec 5, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Tang, T-A., Ye, F. & Jiang, Y-L. (eds.). Institute of Electrical and Electronics Engineers Inc., 8565049. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

Fan, C. C., Chiu, Y. C., Liu, C., Lai, W. W., Tu, C. Y., Lin, M. H., Chang, T. J., Chang, C. Y., Liou, G. L., Hsu, H. H., Tang, C. Y. & Cheng, C. H., 2018 Jul 26, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 280-282 3 p. 8421478. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2017

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J. & Cheng, O., 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T72-T73 7998204. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., Cheng, C. H. & Chang, C. Y., 2017 Jun 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 224-225 2 p. 7947573. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Improved electrical characteristics and reliability of multi-stacking PNPN junctionless transistors using channel depletion effect

Lin, M. H., Shih, Y. J., Liu, C., Chiu, Y. C., Fan, C. C., Liou, G. L., Cheng, C. H. & Chang, C. Y., 2017 Dec 29, 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., p. 47-48 2 p. 8242290. (2017 Silicon Nanoelectronics Workshop, SNW 2017; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

Liou, G. L., Cheng, C. H. & Chiu, Y. C., 2017 Dec 1, EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Program/erase speed and data retention trade-off in negative capacitance versatile memory

Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., Chang, T. J., Chen, W. H., Cheng, C. H. & Chang, C. Y., 2017 Dec 29, 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., p. 101-102 2 p. 8242317. (2017 Silicon Nanoelectronics Workshop, SNW 2017; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

A highly scalable poly-Si junctionless FETs featuring a novel multi-stacking hybrid P/N layer and vertical gate with very high Ion/Ioff for 3D stacked ICs

Cheng, Y. C., Chen, H. B., Chang, C. Y., Cheng, C. H., Shih, Y. J. & Wu, Y. C., 2016 Sep 21, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573429. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

One-Transistor ferroelectric versatile memory: Strained-gate engineering for realizing energy-efficient switching and fast negative-capacitance operation

Chiu, Y. C., Cheng, C. H., Chang, C. Y., Tang, Y. T. & Chen, M. C., 2016 Sep 21, 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 7573414. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

On the variability of threshold voltage window in gate-injection versatile memories with Sub-60mV/dec subthreshold swing and 1012-cycling endurance

Chiu, Y. C., Chang, C. Y., Yen, S. S., Fan, C. C., Hsu, H. H., Cheng, C. H., Chen, P. C., Chen, P. W., Liou, G. L., Lee, M. H., Liu, C. & Chou, W. C., 2016 Sep 22, 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., p. MY71-MY75 7574623. (IEEE International Reliability Physics Symposium Proceedings; vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2015

Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms

Chiu, Y. C., Chang, C. Y., Hsu, H. H., Cheng, C-H. & Lee, M-H., 2015 Jan 1, 2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc., Vol. 2015-May. p. MY31-MY35 7112817

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

Chiu, Y. C., Cheng, C-H., Fan, C. C., Chen, P. C., Chang, C. Y., Lee, M-H., Liu, C., Yen, S. S. & Hsu, H. H., 2015 Aug 3, 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., p. 41-42 2 p. 7175543. (Device Research Conference - Conference Digest, DRC; vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance

Chiu, Y. C., Cheng, C. H., Chang, C. Y., Lee, M-H., Hsu, H. H. & Yen, S. S., 2015 Aug 25, 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T184-T185 7223671. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

29 Citations (Scopus)
2014

Design of self-alignment devices with fluidic self-assembly for flip chip packages in batch processing

Chang, T. L., Chang, C. F., Lee, Y. W., Cheng, C. H., Chou, C. Y. & Huang, M. C., 2014 Jan 1, Micro Nano Devices, Structure and Computing Systems III. Trans Tech Publications, p. 79-83 5 p. (Advanced Materials Research; vol. 918).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer

Hsu, H. H., Chiou, P., Chiu, Y. C., Yen, S. S., Chang, C. Y. & Cheng, C-H., 2014 Jan 1, 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., p. 107-108 2 p. 6872320. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2013

A low operating voltage IGZO TFT using LaLuO3 gate dielectric

Chou, K. I., Hsu, H. H., Cheng, C-H., Lee, K. Y., Li, S. R. & Chin, A., 2013 Dec 23, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628219. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Current uniformity improvement in flexible resistive memory

Zheng, Z. W., Cheng, C. H., Chou, K. I., Liu, M. & Chin, A., 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628193. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Flexible InGaZnO TFTs with stacked GeO2/TiO2 gate dielectrics

Hsu, H. H., Chang, C. Y., Cheng, C. H., Yu, S. H. & Su, C. Y., 2013 Dec 23, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628218

Research output: Chapter in Book/Report/Conference proceedingConference contribution

GeO2/PZT resistive random access memory devices with Ni electrode

Chou, K. I., Cheng, C. H. & Chin, A., 2013 Dec 23, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 6628194. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tantalum nitride for copper diffusion blocking on thin film (BiSb) 2Te3

Hsu, H. H., Cheng, C-H., Lin, C. K., Chen, K. Y. & Lin, Y. L., 2013 Nov 26, Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration. p. 145-150 6 p. (Materials Research Society Symposium Proceedings; vol. 1490).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2012

High-κ gate dielectrics for Ge CMOS and related memory devices

Chin, A., Chen, P. C., Cheng, C. H., Wu, Y. H., Liu, X. Y. & Kang, J. F., 2012 Jul 30, 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. p. 64-65 2 p. 6222459. (2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermoelectric characteristics of annealed N-type BiTe thin film

Hsu, H. H., Cheng, C. H., Chen, P. C., Yeh, C. H., Chen, Y. R., Chou, Y. W., Lin, Y. L. & Yang, C. C., 2012 Dec 1, Solid State Topics (General) - 220th ECS Meeting. 34 ed. p. 27-36 10 p. (ECS Transactions; vol. 41, no. 34).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ultra-low switching power rram using hopping conduction mechanism

Chin, A., Cheng, C. H., Chiu, Y. C., Zheng, Z. W. & Liu, M., 2012, Dielectric Materials and Metals for Nanoelectronics and Photonics 10. 4 ed. p. 3-8 6 p. (ECS Transactions; vol. 50, no. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
2011

Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Wu, T. L., Huang, C. F. & Cheng, C. H., 2011 Aug 1, Wide Bandgap Semiconductor Materials and Devices 12. 6 ed. p. 173-183 11 p. (ECS Transactions; vol. 35, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Size-dependent trapping effect in nano-dot non-volatile memory

Tsai, C. Y., Cheng, C. H., Chang, T. Y., Chou, K. Y., Chin, A. & Yeh, F. S., 2011 Dec 1, Physics and Technology of High-k Materials 9. 3 ed. p. 121-132 12 p. (ECS Transactions; vol. 41, no. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

The reliability study and device modeling for p-HEMT microwave power transistors

Liu, S. L., Chang, H. M., Chang, T., Kao, H. L., Cheng, C. H. & Chin, A., 2011 Dec 1, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 ed. p. 175-187 13 p. (ECS Transactions; vol. 41, no. 6).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance

Tsai, C. Y., Lee, T. H., Chin, A., Wang, H., Cheng, C. H. & Yeh, F. S., 2010 Dec 1, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 5.4.1-5.4.4 5703302. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

High performance ultra-low energy RRAM with good retention and endurance

Cheng, C. H., Tsai, C. Y., Chin, A. & Yeh, F. S., 2010 Dec 1, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 19.4.1-19.4.4 5703392. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Citations (Scopus)

Metal-gate/high-κ CMOS scaling from Si to Ge at small EOT

Chin, A., Chen, W. B., Shie, B. S., Hsu, K. C., Chen, P. C., Cheng, C. H., Chi, C. C., Wu, Y. H., Chaing-Liaoc, K. S., Wang, S. J., Kuan, C. H. & Yeh, F. S., 2010 Dec 1, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 836-839 4 p. 5667443. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Novel ultra-low power RRAM with good endurance and retention

Cheng, C. H., Chin, A. & Yeh, F. S., 2010 Oct 19, 2010 Symposium on VLSI Technology, VLSIT 2010. p. 85-86 2 p. 5556180. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

69 Citations (Scopus)

Very high performance non-volatile memory on flexible plastic substrate

Cheng, C. H., Chou, K. Y., Chin, A. & Yeh, F. S., 2010 Dec 1, 2010 IEEE International Electron Devices Meeting, IEDM 2010. p. 21.5.1-21.5.4 5703408. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
2009

High performance metal/insulator/metal capacitors using HfTiO as dielectric

Hsu, H. H., Cheng, C. H. & Tsui, B. Y., 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. p. 67-68 2 p. 5159294

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2008

High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

Huang, C. C., Cheng, C. H., Chin, A. & Chou, C. P., 2008 Dec 1, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 ed. p. 341-352 12 p. (ECS Transactions; vol. 16, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Improved lower electrode oxidation of high-k TiCeO metal-insulator-metal capacitors by using a novel plasma treatment

Cheng, C. H., Hsu, H. H., Deng, C. K., Chin, A. & Chou, C. P., 2008 Dec 1, ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 ed. p. 323-333 11 p. (ECS Transactions; vol. 16, no. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution