• 1646 Citations
  • 21 h-Index
20072020

Research output per year

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Research Output

2020

A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

Lee, T. M., Lin, C. L., Fan, Y. C., Lee, S., Liu, W. D., Liu, H. M., Huang, Z. Y., Zheng, Z. W., Wang, S. A., Cheng, C. H. & Hsu, H. H., 2020 May 1, In : Thin Solid Films. 701, 137927.

Research output: Contribution to journalArticle

Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Ma, J., Liu, C., Liu, W. D., Hung, Y. W., Fan, Y. C., Hsu, H. H., Zheng, Z. W. & Cheng, C. H., 2020 Jan 1, In : IEEE Transactions on Nanotechnology. 19, p. 89-93 5 p., 8946883.

Research output: Contribution to journalArticle

High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec-1 swing

Liu, C., Chen, H. H., Tung, Y. C., Wang, W. C., Huang, Z. Y., Shih, B. Y., Hsiung, S. Y., Wang, S. A., Fan, Y. C., Lee, T. M., Lin, C. L., Huang, Z. Y., Liu, H. M., Lee, S., Chou, W. C., Cheng, C. H. & Hsu, H. H., 2020 Apr 1, In : Japanese Journal of Applied Physics. 59, SG, SGGA01.

Research output: Contribution to journalArticle

Open Access

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Shang, Z. W., Ma, J., Liu, W. D., Fan, Y. C., Hsu, H. H., Zheng, Z. W. & Cheng, C. H., 2020, In : IEEE Journal of the Electron Devices Society. 8, p. 485-489 5 p., 9060932.

Research output: Contribution to journalArticle

Open Access
2019

Effect of particle size of as-milled powders on microstructural and magnetic properties of Y 3 Mn x Al 0.8- x Fe 4.2 O 12 ferrites

Ching-Chien, H., Chih-Chieh, M., Yung-Hsiung, H., Wei-Zong, Z., Jing-Yi, H., Hsiao-Hsuan, H. & Chun-Hu, C., 2019 Jun, In : Journal of the American Ceramic Society. 102, 6, p. 3525-3534 10 p.

Research output: Contribution to journalArticle

Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation

Rajshekar, K., Hsu, H. H., Kumar, K. U. M., Sathyanarayanan, P., Velmurugan, V., Cheng, C. H. & Kannadassan, D., 2019 Mar, In : IEEE Transactions on Electron Devices. 66, 3, p. 1314-1321 8 p., 8636528.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

Lee, Y. T., Chen, H. H., Tung, Y. C., Shih, B. Y., Hsiung, S. Y., Lee, T. M., Hsu, C. C., Liu, C., Hsu, H. H., Chang, C. Y., Lan, Y. P. & Cheng, C. H., 2019 Jun, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8753958. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gamma-Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Liu, C., Tung, Y. C., Wu, T. L., Cheng, C. H., Tseng, C. Y., Chen, H. H., Chen, H. H., Ma, J., Lin, C. L., Zheng, Z. W., Chou, W. C. & Hsu, H. H., 2019 Dec 1, In : Physica Status Solidi - Rapid Research Letters. 13, 12, 1900414.

Research output: Contribution to journalArticle

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Cheng, C. H., Lin, M. H., Chen, H. Y., Fan, C. C., Liu, C., Hsu, H. H. & Chang, C. Y., 2019 May, In : Physica Status Solidi - Rapid Research Letters. 13, 5, 1800573.

Research output: Contribution to journalLetter

2 Citations (Scopus)

Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Cheng, C. H., Fan, C. C., Tu, C. Y., Hsu, H. H. & Chang, C. Y., 2019 Jan 1, In : IEEE Transactions on Electron Devices. 66, 1, p. 825-828 4 p., 8543493.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Cheng, C. H., Fan, C. C., Hsu, H. H., Wang, S. A. & Chang, C. Y., 2019 Feb 1, In : Physica Status Solidi - Rapid Research Letters. 13, 2, 1800493.

Research output: Contribution to journalLetter

Investigation of gate-stress engineering in negative capacitance FETs using ferroelectric hafnium aluminum oxides

Cheng, C. H., Fan, C. C., Liu, C., Hsu, H. H., Chen, H. H., Hsu, C. C., Wang, S. A. & Chang, C. Y., 2019 Feb, In : IEEE Transactions on Electron Devices. 66, 2, p. 1082-1086 5 p., 8598996.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer

Liu, K. W., Chen, H. H., Huang, Z. Y., Wang, W. C., Fan, Y. C., Lin, C. L., Hsu, C. C., Fan, C. C., Hsu, H. H., Chang, C. Y., Lin, C. C. & Cheng, C. H., 2019 Jun, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8754036. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Chang, T. J., Liu, C., Fan, C. C., Hsu, H. H., Chen, H. H., Chen, W. H., Fan, Y. C., Lee, T. M., Lin, C. L., Ma, J., Zheng, Z. W., Cheng, C. H., Wang, S. A. & Chang, C. Y., 2019 Aug, In : Vacuum. 166, p. 11-14 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

Liu, C., Chen, H. H., Hsu, C. C., Fan, C. C., Hsu, H. H. & Cheng, C. H., 2019 Jun, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T224-T225 8776482. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Progress and challenges in p-type oxide-based thin film transistors

Shang, Z. W., Hsu, H. H., Zheng, Z. W. & Cheng, C. H., 2019 Jan 1, In : Nanotechnology Reviews. 8, 1, p. 422-443 22 p.

Research output: Contribution to journalArticle

Open Access

Simulation of Poly-Silicon Thin Film Transistors with Negative Capacitance Effect

Shang, Z. W., Ma, J., Liu, W. D., Zheng, Z. W. & Cheng, C. H., 2019 Oct, 2019 8th International Symposium on Next Generation Electronics, ISNE 2019. Institute of Electrical and Electronics Engineers Inc., 8896500. (2019 8th International Symposium on Next Generation Electronics, ISNE 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Liu, C., Tung, Y. C., Tseng, C. Y., Wang, W. C., Chen, H. H., Lee, T. M., Chou, W. C., Zheng, Z. W., Cheng, C. H. & Hsu, H. H., 2019 Jan 1, In : ECS Journal of Solid State Science and Technology. 8, 10, p. P553-P556

Research output: Contribution to journalArticle

2018

Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain

Fan, C. C., Cheng, C. H., Tu, C. Y., Liu, C., Chen, W. H., Chang, T. J. & Chang, C. Y., 2018 Oct 25, 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., p. 139-140 2 p. 8510640. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors

Cho, C. L., Kao, H. L., Wu, Y. H., Chang, L. C. & Cheng, C. H., 2018 Jan 1, In : Journal of Electronic Materials. 47, 1, p. 677-683 7 p.

Research output: Contribution to journalArticle

Editorial: IEDMS 2016

Liu, C. H., Cheng, C. H., Cheng, C. P. & Liou, J. J., 2018 Apr, In : Microelectronics Reliability. 83, 1 p.

Research output: Contribution to journalEditorial

Effect of specific surface area of raw material Fe2O3 on magnetic properties of YIG

Huang, C. C., Zuo, W. Z., Hung, Y. H., Huang, J. Y., Kuo, M. F. & Cheng, C. H., 2018 Mar 1, In : Journal of Magnetism and Magnetic Materials. 449, p. 157-164 8 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Energy-efficient HfAlOx NCFET: Using gate strain and defect passivation to realize nearly hysteresis-free sub-25mV/dec switch with ultralow leakage

Fan, C. C., Cheng, C. H., Chen, Y. R., Liu, C. & Chang, C. Y., 2018 Jan 23, 2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., p. 23.2.1-23.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

High speed negative capacitance ferroelectric memory

Chang, C. Y., Fan, C. C., Liu, C., Chiu, Y. C. & Cheng, C. H., 2018 Jan 8, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Qin, Y., Tang, T-A. & Hong, Z. (eds.). IEEE Computer Society, p. 1-5 5 p. (Proceedings of International Conference on ASIC; vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

Liu, C., Cheng, C. H., Lin, M. H., Shih, Y. J., Hung, Y. W., Fan, C. C., Chen, H. H., Chen, W. H., Hsu, C. C., Shih, B. Y., Chiu, Y. C., Chou, W. C., Hsu, H. H. & Chang, C. Y., 2018 Jan, In : ECS Journal of Solid State Science and Technology. 7, 12, p. Q242-Q245

Research output: Contribution to journalArticle

1 Citation (Scopus)

Influence of CaCO3 and SiO2 additives on magnetic properties of M-type Sr ferrites

Huang, C. C., Jiang, A. H., Hung, Y. H., Liou, C. H., Wang, Y. C., Lee, C. P., Hung, T. Y., Shaw, C. C., Kuo, M. F. & Cheng, C. H., 2018 Apr 1, In : Journal of Magnetism and Magnetic Materials. 451, p. 288-294 7 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

Fan, C. C., Tu, C. Y., Lin, M. H., Chang, C. Y., Cheng, C. H., Chen, Y. L., Liou, G. L., Liu, C., Chou, W. C. & Hsu, H. H., 2018 May 25, 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., p. PTX.81-PTX.85 (IEEE International Reliability Physics Symposium Proceedings; vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides

Liu, C., Fan, C. C., Tseng, C. Y., Hsu, H. H., Cheng, C. H., Chen, Y. L., Chang, C. Y., Chou, W. C., Lin, C. L., Fan, Y. C. & Lee, T. M., 2018 Dec 5, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings. Tang, T-A., Ye, F. & Jiang, Y-L. (eds.). Institute of Electrical and Electronics Engineers Inc., 8565049. (2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

On the electrical characteristics of ferroelectric FinFET using hafnium zirconium oxide with optimized gate stack

Lin, M. H., Fan, C. C., Hsu, H. H., Liu, C., Chen, K. M., Cheng, C. H. & Chang, C. Y., 2018 Jan 1, In : ECS Journal of Solid State Science and Technology. 7, 11, p. P640-P646

Research output: Contribution to journalArticle

Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

Fan, C. C., Chiu, Y. C., Liu, C., Lai, W. W., Tu, C. Y., Lin, M. H., Chang, T. J., Chang, C. Y., Liou, G. L., Hsu, H. H., Tang, C. Y. & Cheng, C. H., 2018 Jul 26, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 280-282 3 p. 8421478. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2017

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors

Kao, H. L., Yeh, C. S., Chiu, H. C., Cho, C. L. & Cheng, C. H., 2017 Nov 1, In : International Journal of Circuit Theory and Applications. 45, 11, p. 1621-1636 16 p.

Research output: Contribution to journalArticle

Channel modification engineering by plasma processing in tin-oxide thin film transistor: Experimental results and first-principles calculation

Chiu, Y. C., Chen, P. C., Chang, S. L., Zheng, Z. W., Cheng, C. H., Liou, G. L., Kao, H. L., Wu, Y. H. & Chang, C. Y., 2017 Jan 1, In : ECS Journal of Solid State Science and Technology. 6, 4, p. Q53-Q57

Research output: Contribution to journalArticle

1 Citation (Scopus)

Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs

Chiu, H. C., Chou, M. L., Cheng, C. H., Kao, H. L. & Cho, C. L., 2017 Nov 1, In : Microelectronics Reliability. 78, p. 267-271 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

Chiu, Y. C., Zheng, Z. W., Cheng, C. H., Chen, P. C., Yen, S. S., Fan, C. C., Hsu, H. H., Kao, H. L. & Chang, C. Y., 2017 Mar 1, In : Applied Physics A: Materials Science and Processing. 123, 3, 188.

Research output: Contribution to journalArticle

Energy-Efficient Versatile Memories with Ferroelectric Negative Capacitance by Gate-Strain Enhancement

Chiu, Y. C., Cheng, C. H., Liou, G. L. & Chang, C. Y., 2017 Aug, In : IEEE Transactions on Electron Devices. 64, 8, p. 3498-3501 4 p., 7949049.

Research output: Contribution to journalArticle

18 Citations (Scopus)
14 Citations (Scopus)

Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

Chen, P. C., Chiu, Y. C., Zheng, Z. W., Lin, M. H., Cheng, C. H., Liou, G. L., Hsu, H. H. & Kao, H. L., 2017 Sep 1, In : IEEE Transactions on Nanotechnology. 16, 5, p. 876-879 4 p., 7959132.

Research output: Contribution to journalArticle

6 Citations (Scopus)

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J. & Cheng, O., 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T72-T73 7998204. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Impact of ferroelectric domain switching in nonvolatile charge-trapping memory

Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., Cheng, C. H. & Chang, C. Y., 2017 Jun 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 224-225 2 p. 7947573. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Improved electrical characteristics and reliability of multi-stacking PNPN junctionless transistors using channel depletion effect

Lin, M. H., Shih, Y. J., Liu, C., Chiu, Y. C., Fan, C. C., Liou, G. L., Cheng, C. H. & Chang, C. Y., 2017 Dec 29, 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., p. 47-48 2 p. 8242290. (2017 Silicon Nanoelectronics Workshop, SNW 2017; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Influence of plasma fluorination on p-type channel tin-oxide thin film transistors

Chen, P. C., Chiu, Y. C., Zheng, Z. W., Cheng, C. H. & Wu, Y. H., 2017 Jan 1, In : Journal of Alloys and Compounds. 707, p. 162-166 5 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure

Yen, S. S., Cheng, C. H., Fan, C. C., Chiu, Y. C., Hsu, H. H., Lan, Y. P. & Chang, C. Y., 2017 Oct 1, In : IEEE Transactions on Electron Devices. 64, 10, p. 4200-4205 6 p., 8010910.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Investigation of electrical characteristics on 25-nm InGaAs channel FinFET Using InAlAs back barrier and Al2O3 gate dielectric

Lin, M. H., Lin, Y. C., Lin, Y. S., Sun, W. J., Chen, S. H., Chiu, Y. C., Cheng, C. H. & Chang, C. Y., 2017 Jan 1, In : ECS Journal of Solid State Science and Technology. 6, 4, p. Q58-Q62

Research output: Contribution to journalArticle

1 Citation (Scopus)

Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode

Chiu, Y. C., Cheng, C. H., Chang, C. Y., Tang, Y. T. & Chen, M. C., 2017 Mar 1, In : Physica Status Solidi - Rapid Research Letters. 11, 3, 1600368.

Research output: Contribution to journalArticle

21 Citations (Scopus)

Magnetic property enhancement of cobalt-free M-type strontium hexagonal ferrites by CaCO3 and SiO2 addition

Huang, C. C., Jiang, A. H., Liou, C. H., Wang, Y. C., Lee, C. P., Hung, T. Y., Shaw, C. C., Hung, Y. H., Kuo, M. F. & Cheng, C. H., 2017 Oct, In : Intermetallics. 89, p. 111-117 7 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment

Chen, P. C., Chiu, Y. C., Liou, G. L., Zheng, Z. W., Cheng, C. H. & Wu, Y. H., 2017 Feb, In : IEEE Electron Device Letters. 38, 2, p. 210-212 3 p., 7801931.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

Liou, G. L., Cheng, C. H. & Chiu, Y. C., 2017 Dec 1, EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Program/erase speed and data retention trade-off in negative capacitance versatile memory

Fan, C. C., Chiu, Y. C., Liu, C., Liou, G. L., Lai, W. W., Chen, Y. R., Chang, T. J., Chen, W. H., Cheng, C. H. & Chang, C. Y., 2017 Dec 29, 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., p. 101-102 2 p. 8242317. (2017 Silicon Nanoelectronics Workshop, SNW 2017; vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The new FCL with HTS for the high-speed communication system

Cheng, K. H., Chiou, H. K., Chiu, T. H., Cheng, C. H., Shih, C. F. & Huang, T. W., 2017 Apr 1, In : Microwave and Optical Technology Letters. 59, 4, p. 964-966 3 p.

Research output: Contribution to journalArticle

Ultrasonic dissimilar joining of aluminum alloy and polymer with the composite material of ABS polymer doping carbonized rice husk

Cheng, C. P., Cheng, C. H., Yu-Chen Chen, L. W. W. & You, Y. S., 2017 Oct 25, In : MATEC Web of Conferences. 130, 06001.

Research output: Contribution to journalConference article

1 Citation (Scopus)