INIS
transistors
100%
metals
79%
devices
78%
performance
76%
ferroelectric materials
74%
thin films
72%
dielectrics
71%
voltage
69%
capacitors
66%
capacitance
65%
layers
63%
power
50%
tantalum nitrides
48%
applications
45%
titanium oxides
44%
oxides
43%
electrodes
38%
oxygen
37%
plasma
36%
mobility
33%
substrates
31%
hafnium
29%
leakage current
28%
interfaces
27%
energy
27%
investigations
27%
density
26%
films
25%
randomness
24%
doped materials
24%
traps
23%
thickness
23%
polarization
22%
tin oxides
21%
hafnium oxides
21%
defects
20%
retention
20%
operation
20%
vacancies
19%
distribution
19%
leakage
19%
annealing
19%
field effect transistors
17%
engineering
17%
mosfet
16%
semiconductor materials
16%
high temperature
16%
work functions
16%
reliability
15%
speed
14%
Material Science
Dielectric Material
76%
Ferroelectric Material
72%
Capacitance
71%
Capacitor
64%
Thin-Film Transistor
58%
Hafnium
50%
Oxide Compound
49%
Density
40%
Transistor
29%
Resistive Random-Access Memory
29%
Titanium Dioxide
28%
Oxygen Vacancy
26%
Field Effect Transistor
25%
Film
21%
Aluminum Oxide
18%
Titanium Oxide
17%
Tin Oxide
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Metal Oxide
15%
Indium
13%
Zirconia
13%
Magnetic Property
12%
Annealing
11%
Nitride Compound
9%
Electronic Circuit
9%
Zinc Oxide
9%
Gallium
9%
Thin Films
8%
Aluminum
8%
Tantalum
8%
Oxide Semiconductor
7%
Defect Passivation
7%
Ferroelectricity
7%
Covalent Bond
6%
Silicon
6%
Polyimide
6%
Electron Mobility
5%
Buffer Layer
5%
Thermoelectrics
5%
Percolation
5%
Doping (Additives)
5%
Engineering
Thin film transistors
49%
Gate Dielectric
28%
Dielectrics
26%
Resistive
20%
Plasma Treatment
18%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Resistive Random Access Memory
16%
Current Ratio
13%
Field-Effect Transistor
12%
Metal-Insulator-Metal
12%
Experimental Result
11%
Engineering
11%
Gate Stack
10%
Oxide Thickness
10%
Room Temperature
10%
Low-Temperature
10%
Capping Layer
9%
Flexible Substrate
9%
Silicon Dioxide
8%
Oxygen Vacancy
8%
Device Performance
7%
Oxide Semiconductor
7%
Field Effect Transistor
7%
Current Distribution
7%
Band Gap
7%
Operating Voltage
6%
Passivation
6%
Monoclinic
6%
Nonvolatile Memory
6%
Channel Layer
5%
Interface Trap
5%
Barrier Layer
5%