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INIS
transistors
100%
devices
79%
metals
79%
ferroelectric materials
78%
performance
77%
thin films
72%
dielectrics
71%
voltage
69%
capacitors
66%
layers
65%
capacitance
65%
power
50%
tantalum nitrides
48%
applications
45%
titanium oxides
44%
oxides
43%
electrodes
38%
oxygen
37%
plasma
36%
mobility
33%
hafnium
31%
substrates
31%
leakage current
28%
interfaces
28%
energy
27%
investigations
27%
density
26%
films
25%
polarization
25%
randomness
24%
doped materials
24%
traps
24%
thickness
23%
tin oxides
21%
hafnium oxides
21%
defects
20%
retention
20%
operation
20%
field effect transistors
19%
vacancies
19%
distribution
19%
leakage
19%
annealing
19%
engineering
19%
semiconductor materials
17%
mosfet
16%
aluminium oxides
16%
reliability
16%
high temperature
16%
work functions
16%
Material Science
Ferroelectric Material
78%
Dielectric Material
76%
Capacitance
71%
Capacitor
68%
Thin-Film Transistor
60%
Hafnium
52%
Oxide Compound
43%
Density
41%
Transistor
37%
Resistive Random-Access Memory
30%
Field Effect Transistor
29%
Oxygen Vacancy
28%
Titanium Dioxide
27%
Film
25%
Titanium Oxide
21%
Aluminum Oxide
20%
Metal Oxide
19%
Zirconia
17%
Tin Oxide
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Indium
12%
Oxide Semiconductor
12%
Magnetic Property
11%
Ferrite
11%
Annealing
10%
Electron Mobility
9%
Nitride Compound
9%
Electronic Circuit
9%
Oxide Thickness
9%
Thin Films
8%
Zinc Oxide
8%
Gallium
8%
Tantalum
8%
Silicon
7%
Defect Passivation
7%
Covalent Bond
7%
Electrical Property
7%
Aluminum
7%
Ferroelectricity
7%
Thermoelectrics
7%
Percolation
7%
Display Device
6%
Electrochromics
6%
Charge Trapping
6%
Thermal Stability
5%
Buffer Layer
5%
Doping (Additives)
5%
Engineering
Thin film transistors
29%
Transistor
23%
Dielectrics
21%
Gate Dielectric
18%
Resistive
16%
Plasma Treatment
14%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Oxygen Vacancy
11%
Low-Temperature
11%
Capping Layer
10%
Experimental Result
10%
Metal-Insulator-Metal
10%
Resistive Random Access Memory
9%
Current Ratio
9%
Oxide Thickness
8%
Aluminum Oxide
8%
Field-Effect Transistor
8%
Nonvolatile Memory
8%
Oxide Semiconductor
7%
Operating Voltage
7%
Field Effect Transistor
7%
Nitrogen
7%
Power Set
6%
Engineering
6%
Switching Time
5%
Covalent
5%
Device Performance
5%