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Fingerprint Dive into the research topics where Chun-Hu Cheng is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 1 Similar Profiles
Thin film transistors Engineering & Materials Science
Data storage equipment Engineering & Materials Science
Capacitors Engineering & Materials Science
Capacitance Engineering & Materials Science
Metals Chemical Compounds
Ferroelectric materials Engineering & Materials Science
Gate dielectrics Engineering & Materials Science
capacitors Physics & Astronomy

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Research Output 2007 2019

  • 1471 Citations
  • 21 h-Index
  • 113 Article
  • 41 Conference contribution
  • 3 Letter

Effect of particle size of as-milled powders on microstructural and magnetic properties of Y 3 Mn x Al 0.8- x Fe 4.2 O 12 ferrites

Ching-Chien, H., Chih-Chieh, M., Yung-Hsiung, H., Wei-Zong, Z., Jing-Yi, H., Hsiao-Hsuan, H. & Chun-Hu, C., 2019 Jun, In : Journal of the American Ceramic Society. 102, 6, p. 3525-3534 10 p.

Research output: Contribution to journalArticle

Manganese Compounds
Aluminum Compounds
Manganese compounds
Grain size and shape
Aluminum compounds

Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation

Rajshekar, K., Hsu, H. H., Kumar, K. U. M., Sathyanarayanan, P., Velmurugan, V., Cheng, C-H. & Kannadassan, D., 2019 Mar 1, In : IEEE Transactions on Electron Devices. 66, 3, p. 1314-1321 8 p., 8636528.

Research output: Contribution to journalArticle

Fluorination
Thin film transistors
Plasmas
Experiments
Defects

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

Lee, Y. T., Chen, H. H., Tung, Y. C., Shih, B. Y., Hsiung, S. Y., Lee, T. M., Hsu, C. C., Liu, C., Hsu, H. H., Chang, C. Y., Lan, Y. P. & Cheng, C-H., 2019 Jun 1, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8753958. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hafnium oxides
hafnium oxides
Nitrogen plasma
nitrogen plasma
Ferroelectric materials
1 Citation (Scopus)

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Cheng, C-H., Lin, M. H., Chen, H. Y., Fan, C. C., Liu, C., Hsu, H. H. & Chang, C. Y., 2019 May 1, In : Physica Status Solidi - Rapid Research Letters. 13, 5, 1800573.

Research output: Contribution to journalLetter

Hafnium oxides
hafnium oxides
Zirconium
capacitance switches
Transistors
3 Citations (Scopus)

Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Cheng, C. H., Fan, C. C., Tu, C. Y., Hsu, H. H. & Chang, C. Y., 2019 Jan 1, In : IEEE Transactions on Electron Devices. 66, 1, p. 825-828 4 p., 8543493.

Research output: Contribution to journalArticle

Hafnium oxides
Field effect transistors
Transistors
Capacitance
Doping (additives)