• 639 Citations
  • 14 h-Index
19972019

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Article
2019

Integration of ARCS motivational model and it to enhance students learning in the context of atayal culture

Chao, J., Jiang, T. W., Yeh, Y. H., Liu, C. H. & Lin, C. M., 2019 Jan 1, In : Eurasia Journal of Mathematics, Science and Technology Education. 15, 11, em1771.

Research output: Contribution to journalArticle

2018
Open Access

Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 Apr 1, In : Microelectronics Reliability. 83, p. 230-234 5 p.

Research output: Contribution to journalArticle

On the electrical characteristics of ferroelectric FinFET using hafnium zirconium oxide with optimized gate stack

Lin, M. H., Fan, C. C., Hsu, H. H., Liu, C-H., Chen, K. M., Cheng, C. H. & Chang, C. Y., 2018, In : ECS Journal of Solid State Science and Technology. 7, 11, p. P640-P646

Research output: Contribution to journalArticle

1 Citation (Scopus)
2017

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 Dec 1, In : IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

Research output: Contribution to journalArticle

3 Citations (Scopus)
Open Access
6 Citations (Scopus)

Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs

Lee, C. C., Kuo, Y. T. & Liu, C. H., 2017 Nov 1, In : Materials Science in Semiconductor Processing. 70, p. 254-259 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2016

A case study of design and usability evaluation of the Collaborative Problem Solving Instructional Platform system

Chao, J. Y., Chao, S. J., Yao, L. Y. & Liu, C. H., 2016, In : Eurasia Journal of Mathematics, Science and Technology Education. 12, 10, p. 2647-2655 9 p.

Research output: Contribution to journalArticle

Open Access
3 Citations (Scopus)
2015

A resultant stress effect of contact etching stop layer and geometrical designs of poly gate on Nanoscaled nMOSFETs with a Si1-xGex channel

Lee, C. C., Liu, C. H., Chen, Z. H. & Tzeng, T. L., 2015 Jan 1, In : Journal of Nanoscience and Nanotechnology. 15, 3, p. 2173-2178 6 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Wang, S. J., Wang, M. C., Chen, S. Y., Lan, W. H., Yang, B. W., Huang, L. S. & Liu, C. H., 2015, In : Microelectronics Reliability. 55, 11, p. 2203-2207 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures

Wang, S. J., Wang, M. C., Lee, W. D., Chen, W. S., Huang, H. S., Chen, S. Y., Huang Ms, L. S. & Liu, C. H., 2015, In : International Journal of Nanotechnology. 12, 1-2, p. 59-73 15 p.

Research output: Contribution to journalArticle

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

Lin, K. C., Juan, P. C., Liu, C. H., Wang, M. C. & Chou, C. H., 2015 Jan 1, In : Microelectronics Reliability. 55, 11, p. 2198-2202 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Structural optimizations of silicon based NMOSFETs with a sunken STI pattern by using a robust stress simulation methodology

Lee, C. C., Liu, C-H., Cheng, H. C. & Deng, R. H., 2015 Jan 1, In : Journal of Nanoscience and Nanotechnology. 15, 3, p. 2179-2184 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2014

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Wang, M. C., Wang, S. J., Huang, H. S., Chen, S. Y., Peng, M. R., Ji, L. R., Lu, M. F., Liao, W. S. & Liu, C. H., 2014, In : International Journal of Nanotechnology. 11, 1-4, p. 62-74 13 p.

Research output: Contribution to journalArticle

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Lee, C. C., Liu, C. H., Hsu, H. W. & Hung, M. H., 2014 Apr 30, In : Thin Solid Films. 557, p. 311-315 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Lin, K. C., Twu, M. J., Juan, P. C., Hsu, H. W., Huang, H. S., Wang, M. C. & Liu, C. H., 2014, In : International Journal of Nanotechnology. 11, 1-4, p. 27-39 13 p.

Research output: Contribution to journalArticle

Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern

Lee, C. C., Liu, C. H., Deng, R. H., Hsu, H. W. & Chiang, K. N., 2014 Apr 30, In : Thin Solid Films. 557, p. 323-328 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors

Lee, C. C., Cheng, H. C., Hsu, H. W., Chen, Z. H., Teng, H. H. & Liu, C. H., 2014 Apr 30, In : Thin Solid Films. 557, p. 316-322 7 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Positive bias temperature instability in p -type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Samanta, P., Huang, H. S., Chen, S. Y., Liu, C. H. & Cheng, L. W., 2014 Feb 21, In : Journal of Applied Physics. 115, 7, 074502.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers

Wang, M. C., Huang, H. S., Peng, M. R., Wang, S. J., Chen, T. Y., Liao, W. S., Yang, H. C. & Liu, C. H., 2014, In : International Journal of Materials and Product Technology. 49, 1, p. 25-40 16 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2013

Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

Hsu, H. W., Huang, H. S., Lee, C. C., Chen, S. Y., Teng, H. H., Peng, M. R., Wang, M. C. & Liu, C-H., 2013 Dec 1, In : Journal of Nanoscience and Nanotechnology. 13, 12, p. 8127-8132 6 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P. C., Sun, C. L., Liu, C. H., Lin, C. L., Mong, F. C., Huang, J. H. & Chang, H. S., 2013 May 1, In : Microelectronic Engineering. 109, p. 142-147 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

Hsu, H. W., Lin, K. C., Lee, C. C., Twu, M-J., Huang, H. S., Chen, S. Y., Peng, M. R., Teng, H. H. & Liu, C-H., 2013 Oct 1, In : Thin Solid Films. 544, p. 120-124 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Temperature-dependent current conduction of metal-ferroelectric (BiFeO 3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications

Juan, P. C., Lin, C. L., Liu, C. H., Chen, C. H., Chang, Y. K. & Yeh, L. Y., 2013 Jul 31, In : Thin Solid Films. 539, p. 360-364 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

Juan, P. C., Liu, C. H., Lin, C. L., Mong, F. C. & Huang, J. H., 2013 Apr 30, In : Microelectronic Engineering. 109, p. 172-176 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2012

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Huang, H. S., Samanta, P., Tzeng, T. J., Chen, S. Y. & Liu, C. H., 2012 Jan 9, In : Applied Physics Letters. 100, 2, 023501.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics

Lin, K. C., Chen, J. Y., Hsu, H. W., Chen, H. W. & Liu, C-H., 2012 Nov 1, In : Solid-State Electronics. 77, p. 7-11 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

ONO側壁與CESL對MOSFET通道應力影響之分析

楊煌偉(Huang-Wei Y, 鄧榮皓(Rong-Hou D, 蔡旻琦(Ming-Chi T, 屠名正(Ming-Jenq T & 劉傳璽(Chuan-Hsi L, 2012, In : 真空科技. 25, 3, p. 22-27 6 p.

Research output: Contribution to journalArticle

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Liu, C-H., Hsu, H. W., Chen, H. W., Juan, P. C., Wang, M. C., Cheng, C-P. & Huang, H. S., 2012 Jan 1, In : Microelectronic Engineering. 89, 1, p. 15-18 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

Liu, C. H., Juan, P. C., Chou, Y. H. & Hsu, H. W., 2012 Jan 1, In : Microelectronic Engineering. 89, 1, p. 2-5 4 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Hsu, H. W., Huang, H. S., Chen, H. W., Cheng, C-P., Lin, K. C., Chen, S. Y., Wang, M. C. & Liu, C-H., 2012 Nov 1, In : Solid-State Electronics. 77, p. 2-6 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
2011

Degradation mechanism for continuous-wave green laser-crystallized polycrystalline silicon n-channel thin-film transistors under low vertical-field hot-carrier stress with different laser annealing powers

Wang, M. C., Yang, H. C., Hsu, H. W., Hsieh, Z. Y., Chen, S. Y., Chang, S. Y. & Liu, C. H., 2011 Apr 1, In : Japanese Journal of Applied Physics. 50, 4 PART 2, 04DH16.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

Juan, P. C., Hsu, C. W., Liu, C. H., Wang, M. T. & Yeh, L. Y., 2011 Jul 1, In : Microelectronic Engineering. 88, 7, p. 1217-1220 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Motion estimation using two-stage predictive search algorithms based on joint spatio-temporal correlation information

Hsieh, L., Chen, W. S. & Liu, C. H., 2011 Sep, In : Expert Systems with Applications. 38, 9, p. 11608-11623 16 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Temperature dependence of substrate currents of MOSFETs under different drain and gate biases

Liu, C. H., Chen, S. Y., Tu, C. H., Huang, H. S., Chou, S. & Ko, J., 2011 Apr, In : Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A. 34, 3, p. 441-448 8 p.

Research output: Contribution to journalArticle

2010

A genome-wide quantitative trait loci scan of neurocognitive performances in families with schizophrenia

Lien, Y. J., Liu, C. M., Faraone, S. V., Tsuang, M. T., Hwu, H. G., Hsiao, P. C. & Chen, W. J., 2010 Oct 1, In : Genes, Brain and Behavior. 9, 7, p. 695-702 8 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics

Liu, C. H. & Chen, H. W., 2010 May 1, In : Microelectronics Reliability. 50, 5, p. 599-602 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Chen, H. W. & Liu, C-H., 2010 May 1, In : Microelectronics Reliability. 50, 5, p. 614-617 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process

Wang, M. C., Liu, C-H., Huang, K. S., Hsieh, Z. Y., Chen, S. Y., Yang, H. C. & Lin, C. R., 2010 Jun 1, In : Microelectronics Reliability. 50, 6, p. 839-846 8 p.

Research output: Contribution to journalArticle

Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs

Huang, H. S., Wang, M. C., Hsieh, Z. Y., Chen, S. Y., Chuang, A. E. & Liu, C-H., 2010 May 1, In : Solid-State Electronics. 54, 5, p. 527-529 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

Liu, C-H., Juan, P. C. & Lin, J. Y., 2010 Oct 1, In : Thin Solid Films. 518, 24, p. 7455-7459 5 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)
9 Citations (Scopus)
2009

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Liu, C. H., Chen, H. W., Chen, S. Y., Huang, H. S. & Cheng, L. W., 2009, In : Applied Physics Letters. 95, 1, 012103.

Research output: Contribution to journalArticle

34 Citations (Scopus)

Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric

Juan, P. C., Liu, C-H., Lin, C. L., Ju, S. C., Chen, M. G., Chanf, I. Y. K. & Lu, J. H., 2009 May 1, In : Japanese Journal of Applied Physics. 48, 5 PART 2

Research output: Contribution to journalArticle

11 Citations (Scopus)

National project on 45 to 32 nm metal oxide semiconductor field effect transistors for next century IC fabrications

Hwang, H. L., Wang, C. W., Chang, K. H., Tsai, C. H., Leou, K. C., Chang-Liao, K. S., Lu, C. C., Chang, S. C., Liu, C. H., Chin, A., Chang, K. M. & Chen, B. N., 2009 Apr 4, In : e-Journal of Surface Science and Nanotechnology. 7, p. 507-512 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2008

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Chen, H. W., Chen, S. Y., Chen, K. C., Huang, H. S., Liu, C. H., Chiu, F. C., Liu, K. W., Lin, K. C., Cheng, L. W., Lin, C. T., Ma, G. H. & Sun, S. W., 2008 Jul 30, In : Applied Surface Science. 254, 19, p. 6127-6130 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Interface characterization and current conduction in HfO 2 -gated MOS capacitors

Chen, H. W., Chiu, F. C., Liu, C. H., Chen, S. Y., Huang, H. S., Juan, P. C. & Hwang, H. L., 2008 Jul 30, In : Applied Surface Science. 254, 19, p. 6112-6115 4 p.

Research output: Contribution to journalArticle

30 Citations (Scopus)