• 633 Citations
  • 14 h-Index
19972019

Research output per year

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Research Output

Article

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 Dec 1, In : IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

Research output: Contribution to journalArticle

3 Citations (Scopus)

A case study of design and usability evaluation of the Collaborative Problem Solving Instructional Platform system

Chao, J. Y., Chao, S. J., Yao, L. Y. & Liu, C. H., 2016 Jan 1, In : Eurasia Journal of Mathematics, Science and Technology Education. 12, 10, p. 2647-2655 9 p.

Research output: Contribution to journalArticle

Open Access
3 Citations (Scopus)
Open Access
3 Citations (Scopus)

A genome-wide quantitative trait loci scan of neurocognitive performances in families with schizophrenia

Lien, Y. J., Liu, C. M., Faraone, S. V., Tsuang, M. T., Hwu, H. G., Hsiao, P. C. & Chen, W. J., 2010 Oct 1, In : Genes, Brain and Behavior. 9, 7, p. 695-702 8 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)
Open Access

A resultant stress effect of contact etching stop layer and geometrical designs of poly gate on Nanoscaled nMOSFETs with a Si1-xGex channel

Lee, C. C., Liu, C. H., Chen, Z. H. & Tzeng, T. L., 2015 Jan 1, In : Journal of Nanoscience and Nanotechnology. 15, 3, p. 2173-2178 6 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Wang, M. C., Wang, S. J., Huang, H. S., Chen, S. Y., Peng, M. R., Ji, L. R., Lu, M. F., Liao, W. S. & Liu, C. H., 2014 Jan 1, In : International Journal of Nanotechnology. 11, 1-4, p. 62-74 13 p.

Research output: Contribution to journalArticle

Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Pan, T. M., Lin, H. S., Chen, M. G., Liu, C. H. & Chang, Y. J., 2002 Jul, In : IEEE Electron Device Letters. 23, 7, p. 416-418 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

Hsu, H. W., Huang, H. S., Lee, C. C., Chen, S. Y., Teng, H. H., Peng, M. R., Wang, M. C. & Liu, C-H., 2013 Dec 1, In : Journal of Nanoscience and Nanotechnology. 13, 12, p. 8127-8132 6 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Liu, C. H., Chen, H. W., Chen, S. Y., Huang, H. S. & Cheng, L. W., 2009 Jul 20, In : Applied Physics Letters. 95, 1, 012103.

Research output: Contribution to journalArticle

34 Citations (Scopus)

Degradation mechanism for continuous-wave green laser-crystallized polycrystalline silicon n-channel thin-film transistors under low vertical-field hot-carrier stress with different laser annealing powers

Wang, M. C., Yang, H. C., Hsu, H. W., Hsieh, Z. Y., Chen, S. Y., Chang, S. Y. & Liu, C. H., 2011 Apr 1, In : Japanese Journal of Applied Physics. 50, 4 PART 2, 04DH16.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 Apr 1, In : Microelectronics Reliability. 83, p. 230-234 5 p.

Research output: Contribution to journalArticle

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Lee, C. C., Liu, C. H., Hsu, H. W. & Hung, M. H., 2014 Apr 30, In : Thin Solid Films. 557, p. 311-315 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P. C., Sun, C. L., Liu, C. H., Lin, C. L., Mong, F. C., Huang, J. H. & Chang, H. S., 2013 May 1, In : Microelectronic Engineering. 109, p. 142-147 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics

Liu, C. H. & Chen, H. W., 2010 May 1, In : Microelectronics Reliability. 50, 5, p. 599-602 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Chen, H. W., Chen, S. Y., Chen, K. C., Huang, H. S., Liu, C. H., Chiu, F. C., Liu, K. W., Lin, K. C., Cheng, L. W., Lin, C. T., Ma, G. H. & Sun, S. W., 2008 Jul 30, In : Applied Surface Science. 254, 19, p. 6127-6130 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric

Juan, P. C., Liu, C-H., Lin, C. L., Ju, S. C., Chen, M. G., Chanf, I. Y. K. & Lu, J. H., 2009 May 1, In : Japanese Journal of Applied Physics. 48, 5 PART 2

Research output: Contribution to journalArticle

11 Citations (Scopus)

Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Liu, C. H. & Chiu, F. C., 2007 Jan 1, In : IEEE Electron Device Letters. 28, 1, p. 62-64 3 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Huang, H. S., Samanta, P., Tzeng, T. J., Chen, S. Y. & Liu, C. H., 2012 Jan 9, In : Applied Physics Letters. 100, 2, 023501.

Research output: Contribution to journalArticle

5 Citations (Scopus)

ESD protection for the tolerant I/O circuits using PESD implantation

Tang, H. T. H., Chen, S. S., Liu, S., Lee, M. T., Liu, C. H., Wang, M. C. & Jeng, M. C., 2002 Mar 1, In : Journal of Electrostatics. 54, 3-4, p. 293-300 8 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Chen, M. J., Kang, T. K., Huang, H. T., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2000 Aug 1, In : IEEE Transactions on Electron Devices. 47, 8, p. 1682-1683 2 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Wang, S. J., Wang, M. C., Chen, S. Y., Lan, W. H., Yang, B. W., Huang, L. S. & Liu, C. H., 2015 Jan 1, In : Microelectronics Reliability. 55, 11, p. 2203-2207 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

High performance 50 nm CMOS devices for microprocessor and embedded processor core applications

Huang, S. F., Lin, C. Y., Huang, Y. S., Schafbauer, T., Eller, M., Cheng, Y. C., Cheng, S. M., Sportouch, S., Jin, W., Rovedo, N., Grassmann, A., Huang, Y., Brighten, J., Liu, C. H., Von Ehrenwall, B., Chen, N., Chen, J., Park, O. S., Commons, M., Thomas, A. & 8 others, Lee, M. T., Rauch, S., Clevenger, L., Kaltalioglu, E., Leung, P., Chen, J., Schiml, T. & Wann, C., 2001 Jan 1, In : Technical Digest-International Electron Devices Meeting. p. 237-240 4 p.

Research output: Contribution to journalArticle

39 Citations (Scopus)

Hot carrier and negative-bias temperature instability reliabilities of strained-Si MOSFETs

Liu, C. H. & Pan, T. M., 2007 Jul 1, In : IEEE Transactions on Electron Devices. 54, 7, p. 1799-1803 5 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics

Chen, H. W. & Liu, C-H., 2010 May 1, In : Microelectronics Reliability. 50, 5, p. 614-617 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Lin, K. C., Twu, M. J., Juan, P. C., Hsu, H. W., Huang, H. S., Wang, M. C. & Liu, C. H., 2014 Jan 1, In : International Journal of Nanotechnology. 11, 1-4, p. 27-39 13 p.

Research output: Contribution to journalArticle

Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

Juan, P. C., Hsu, C. W., Liu, C. H., Wang, M. T. & Yeh, L. Y., 2011 Jul 1, In : Microelectronic Engineering. 88, 7, p. 1217-1220 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Integration of ARCS motivational model and it to enhance students learning in the context of atayal culture

Chao, J., Jiang, T. W., Yeh, Y. H., Liu, C. H. & Lin, C. M., 2019 Jan 1, In : Eurasia Journal of Mathematics, Science and Technology Education. 15, 11, em1771.

Research output: Contribution to journalArticle

Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs

Lee, C. C., Kuo, Y. T. & Liu, C. H., 2017 Nov 1, In : Materials Science in Semiconductor Processing. 70, p. 254-259 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Interface characterization and current conduction in HfO 2 -gated MOS capacitors

Chen, H. W., Chiu, F. C., Liu, C. H., Chen, S. Y., Huang, H. S., Juan, P. C. & Hwang, H. L., 2008 Jul 30, In : Applied Surface Science. 254, 19, p. 6112-6115 4 p.

Research output: Contribution to journalArticle

30 Citations (Scopus)

Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern

Lee, C. C., Liu, C. H., Deng, R. H., Hsu, H. W. & Chiang, K. N., 2014 Apr 30, In : Thin Solid Films. 557, p. 323-328 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures

Wang, S. J., Wang, M. C., Lee, W. D., Chen, W. S., Huang, H. S., Chen, S. Y., Huang Ms, L. S. & Liu, C. H., 2015 Jan 1, In : International Journal of Nanotechnology. 12, 1-2, p. 59-73 15 p.

Research output: Contribution to journalArticle

Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics

Lin, K. C., Chen, J. Y., Hsu, H. W., Chen, H. W. & Liu, C-H., 2012 Nov 1, In : Solid-State Electronics. 77, p. 7-11 5 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

Lin, K. C., Juan, P. C., Liu, C. H., Wang, M. C. & Chou, C. H., 2015 Jan 1, In : Microelectronics Reliability. 55, 11, p. 2198-2202 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Low-frequency noise in n-channel metal-oxide-semiconductor field-effect transistors undergoing soft breakdown

Chen, M. J., Kang, T. K., Lee, Y. H., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2001 Jan 1, In : Journal of Applied Physics. 89, 1, p. 648-653 6 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Magnetic relaxation measurement in immunoassay using high-transition- temperature superconducting quantum interference device system

Yang, H-C., Yang, S-Y., Fang, G. L., Huang, W. H., Liu, C-H., Liao, S-H., Horng, H-E. & Hong, C. Y., 2006 Jul 11, In : Journal of Applied Physics. 99, 12, 124701.

Research output: Contribution to journalArticle

27 Citations (Scopus)

Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors

Lee, C. C., Cheng, H. C., Hsu, H. W., Chen, Z. H., Teng, H. H. & Liu, C. H., 2014 Apr 30, In : Thin Solid Films. 557, p. 316-322 7 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Schruefer, K., Brighten, J., Rovedo, N., Hook, T. B., Khare, M. V., Huang, S. F., Wann, C., Chen, T. C. & Ning, T. H., 2001 Jan 1, In : Technical Digest-International Electron Devices Meeting. p. 861-864 4 p.

Research output: Contribution to journalArticle

44 Citations (Scopus)
4 Citations (Scopus)

Mechanism of threshold voltage shift (Δ Vth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

Liu, C. H., Lee, M. T., Lin, C. Y., Chen, J., Loh, Y. T., Liou, F. T., Schruefer, K., Katsetos, A. A., Yang, Z., Rovedo, N., Hook, T. B., Wann, C. & Chen, T. C., 2002 Apr, In : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41, 4 B, p. 2423-2425 3 p.

Research output: Contribution to journalArticle

51 Citations (Scopus)

Motion estimation using two-stage predictive search algorithms based on joint spatio-temporal correlation information

Hsieh, L., Chen, W. S. & Liu, C. H., 2011 Sep, In : Expert Systems with Applications. 38, 9, p. 11608-11623 16 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

National project on 45 to 32 nm metal oxide semiconductor field effect transistors for next century IC fabrications

Hwang, H. L., Wang, C. W., Chang, K. H., Tsai, C. H., Leou, K. C., Chang-Liao, K. S., Lu, C. C., Chang, S. C., Liu, C. H., Chin, A., Chang, K. M. & Chen, B. N., 2009 Apr 4, In : e-Journal of Surface Science and Nanotechnology. 7, p. 507-512 6 p.

Research output: Contribution to journalArticle

Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanism

Kang, T. K., Chen, M. J., Liu, C. H., Chang, Y. J. & Fan, S. K., 2001 Oct 1, In : IEEE Transactions on Electron Devices. 48, 10, p. 2317-2322 6 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

ONO側壁與CESL對MOSFET通道應力影響之分析

楊煌偉(Huang-Wei Y, 鄧榮皓(Rong-Hou D, 蔡旻琦(Ming-Chi T, 屠名正(Ming-Jenq T & 劉傳璽(Chuan-Hsi L, 2012, In : 真空科技. 25, 3, p. 22-27 6 p.

Research output: Contribution to journalArticle

On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs

Chen, S. Y., Tu, C. H., Lin, J. C., Chen, Y. T., Zhuang, S. J., Huang, H. S., Liu, C. H., Chou, S. & Ko, J., 2007 Jan 1, In : Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an. 30, 5, p. 847-853 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides

Chen, M. J., Kang, T. K., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2000 Jul 24, In : Applied Physics Letters. 77, 4, p. 555-557 3 p.

Research output: Contribution to journalArticle

23 Citations (Scopus)

Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

Hsu, H. W., Lin, K. C., Lee, C. C., Twu, M-J., Huang, H. S., Chen, S. Y., Peng, M. R., Teng, H. H. & Liu, C-H., 2013 Oct 1, In : Thin Solid Films. 544, p. 120-124 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Liu, C. H., Pan, T. M., Shu, W. H. & Huang, K. C., 2007 Jun 20, In : Electrochemical and Solid-State Letters. 10, 8, p. G54-G57

Research output: Contribution to journalArticle

10 Citations (Scopus)

Positive bias temperature instability in p -type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Samanta, P., Huang, H. S., Chen, S. Y., Liu, C. H. & Cheng, L. W., 2014 Feb 21, In : Journal of Applied Physics. 115, 7, 074502.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process

Wang, M. C., Liu, C-H., Huang, K. S., Hsieh, Z. Y., Chen, S. Y., Yang, H. C. & Lin, C. R., 2010 Jun 1, In : Microelectronics Reliability. 50, 6, p. 839-846 8 p.

Research output: Contribution to journalArticle