• 633 Citations
  • 14 h-Index
19972019

Research output per year

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Research Output

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 Dec 1, In : IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

Research output: Contribution to journalArticle

3 Citations (Scopus)

A case study of design and usability evaluation of the Collaborative Problem Solving Instructional Platform system

Chao, J. Y., Chao, S. J., Yao, L. Y. & Liu, C. H., 2016 Jan 1, In : Eurasia Journal of Mathematics, Science and Technology Education. 12, 10, p. 2647-2655 9 p.

Research output: Contribution to journalArticle

Open Access
3 Citations (Scopus)
Open Access
3 Citations (Scopus)

Adaptive Fuzzy Cerebellar Model Articulation Controller for two-wheeled robot

Chen, J. Y., Lin, K. C., Tsai, P. S., Liu, C-H. & Ouyang, J. M., 2012 Apr 4, In : Advanced Materials Research. 482-484, p. 1025-1036 12 p.

Research output: Contribution to journalConference article

Adaptive fuzzy control of two-wheeled balancing vehicle

Chen, J. Y., Liu, C. H., Chen, C. C. & Lin, K. C., 2011 Dec 1, Proceedings - 2011 International Conference on Instrumentation, Measurement, Computer, Communication and Control, IMCCC 2011. p. 341-344 4 p. 6154070. (Proceedings - 2011 International Conference on Instrumentation, Measurement, Computer, Communication and Control, IMCCC 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A genome-wide quantitative trait loci scan of neurocognitive performances in families with schizophrenia

Lien, Y. J., Liu, C. M., Faraone, S. V., Tsuang, M. T., Hwu, H. G., Hsiao, P. C. & Chen, W. J., 2010 Oct 1, In : Genes, Brain and Behavior. 9, 7, p. 695-702 8 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

Ameliorated particle swarm optimization by integrating Taguchi methods

Liu, C-H., Chen, Y. L. & Chen, J. Y., 2010 Nov 15, 2010 International Conference on Machine Learning and Cybernetics, ICMLC 2010. p. 1823-1828 6 p. 5580960. (2010 International Conference on Machine Learning and Cybernetics, ICMLC 2010; vol. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

An adaptive PID controller

Chen, J. Y., Liu, C. H., Fan, C. W., Shin, H. Y. & Yen, M. H., 2010 Nov 15, 2010 International Conference on Machine Learning and Cybernetics, ICMLC 2010. p. 884-889 6 p. 5580596. (2010 International Conference on Machine Learning and Cybernetics, ICMLC 2010; vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Analysis of hot-carrier degradation in 0.25-μm surface-channel pMOSFET devices

Liu, C. H., Chen, M. G., Huang-Lu, S., Chang, Y. J. & Fu, K. Y., 1999 Jan 1, In : International Symposium on VLSI Technology, Systems, and Applications, Proceedings. p. 82-85 4 p.

Research output: Contribution to journalConference article

4 Citations (Scopus)

Analysis of promising copper wire bonding in assembly consideration

Wang, M. C., Hsieh, Z. Y., Huang, K. S., Liu, C. H. & Lin, C. R., 2009, IMPACT Conference 2009 International 3D IC Conference - Proceedings. p. 108-111 4 p. 5382168

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
Open Access

A novel design of P-N staggered face-tunneling TFET targeting for low power and appropriate performance applications

Hsieh, E. R., Fan, Y. C., Chang, K. Y., Liu, C. H., Chien, C. H. & Chung, S. S., 2017 Jun 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942487. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

Cheng, H. W., Hsieh, E. R., Huang, Z. H., Chuang, C. H., Chen, C. H., Li, F. L., Lo, Y. M., Liu, C. H. & Chung, S. S., 2018 Jul 3, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A resultant stress effect of contact etching stop layer and geometrical designs of poly gate on Nanoscaled nMOSFETs with a Si1-xGex channel

Lee, C. C., Liu, C. H., Chen, Z. H. & Tzeng, T. L., 2015 Jan 1, In : Journal of Nanoscience and Nanotechnology. 15, 3, p. 2173-2178 6 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

A study of characteristics of halogen-free prevented solder materials

Wang, M. C., Shih, T. T., Lin, B. Y., Yang, H. C., Wu, Y. D. & Liu, C-H., 2012 Dec 1, ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging. p. 101-104 4 p. 6474579. (ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A study to performance of electroplating solder bump in assembly

Wang, M. C., Huang, K. S., Hsieh, Z. Y., Yang, H. C., Liu, C-H. & Lin, C. R., 2010 Nov 24, Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010. p. 794-797 4 p. 5582692. (Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Augmented Reality in design and implementation of interactive recycling game

Chen, J. Y., Liu, C. H. & Wang, W. K., 2014 Mar 10, Environment, Energy and Sustainable Development - Proceedings of the 2013 International Conference on Frontier of Energy and Environment Engineering, ICFEEE 2013. p. 805-808 4 p. (Environment, Energy and Sustainable Development - Proceedings of the 2013 International Conference on Frontier of Energy and Environment Engineering, ICFEEE 2013; vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Body effect of SiGe and CESL strained nano-node NMOSFETs on (100) silicon substrate

Wang, M. C., Wu, G. W., Wang, S. J., Yang, H. C., Liao, W. S., Lu, M. F., Jhang, J. Z. & Liu, C. H., 2013 May 27, p. 379-382. 4 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Breakdown model and lifetime projection for thin gate oxide MOS devices

Liu, C-H., Grondin, R. O., DeMassa, T. A. & Sanchez, J. J., 1997 Dec 1, In : Biennial University/Government/Industry Microelectronics Symposium - Proceedings. p. 78-82 5 p.

Research output: Contribution to journalConference article

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Wang, M. C., Wang, S. J., Huang, H. S., Chen, S. Y., Peng, M. R., Ji, L. R., Lu, M. F., Liao, W. S. & Liu, C. H., 2014 Jan 1, In : International Journal of Nanotechnology. 11, 1-4, p. 62-74 13 p.

Research output: Contribution to journalArticle

Comparison and correlation of ESD HBM (Human Body Model) obtained between TLPG, wafer-level, and package-level tests

Lee, M. T., Liu, C. H., Lin, C. C., Chou, J. T., Tang, H. T. H., Chang, Y. J. & Fu, K. Y., 2000 Dec 1, In : Electrical Overstress/Electrostatic Discharge Symposium Proceedings. p. 105-110 6 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)

Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Pan, T. M., Lin, H. S., Chen, M. G., Liu, C. H. & Chang, Y. J., 2002 Jul, In : IEEE Electron Device Letters. 23, 7, p. 416-418 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

Hsu, H. W., Huang, H. S., Lee, C. C., Chen, S. Y., Teng, H. H., Peng, M. R., Wang, M. C. & Liu, C-H., 2013 Dec 1, In : Journal of Nanoscience and Nanotechnology. 13, 12, p. 8127-8132 6 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

Chen, H. W., Hsu, H. W., Chen, S. Y., Huang, H. S., Wang, M. C. & Liu, C. H., 2011 Sep 26, 4th IEEE International NanoElectronics Conference, INEC 2011. 5991686. (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO 2 stacked gate dielectrics

Liu, C. H., Chen, H. W., Chen, S. Y., Huang, H. S. & Cheng, L. W., 2009 Jul 20, In : Applied Physics Letters. 95, 1, 012103.

Research output: Contribution to journalArticle

34 Citations (Scopus)

Degradation mechanism for continuous-wave green laser-crystallized polycrystalline silicon n-channel thin-film transistors under low vertical-field hot-carrier stress with different laser annealing powers

Wang, M. C., Yang, H. C., Hsu, H. W., Hsieh, Z. Y., Chen, S. Y., Chang, S. Y. & Liu, C. H., 2011 Apr 1, In : Japanese Journal of Applied Physics. 50, 4 PART 2, 04DH16.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Depth profiles and chemical bonding states of graded doping and ultra-thin HfLaO high-k dielectrics deposited on silicon substrate

Juan, P. C., Liu, C-H., Jou, M., Chen, Y. K., Liu, Y. W., Hsu, C. W., Chou, Y. H. & Lin, J. Y., 2010 May 5, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. p. 672-673 2 p. 5424647. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Design of complementary tilt-gate TFETs with SiGe/Si and III-V integrations feasible for ultra-low-power applications

Hsieh, E. R., Lin, Y. S., Zhao, Y. B., Liu, C. H., Chien, C. H. & Chung, S. S., 2015 Sep 24, 2015 Silicon Nanoelectronics Workshop, SNW 2015. Institute of Electrical and Electronics Engineers Inc., 7275322. (2015 Silicon Nanoelectronics Workshop, SNW 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Editorial: IEDMS 2016

Liu, C. H., Cheng, C. H., Cheng, C. P. & Liou, J. J., 2018 Apr, In : Microelectronics Reliability. 83, 1 p.

Research output: Contribution to journalEditorial

Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 Apr 1, In : Microelectronics Reliability. 83, p. 230-234 5 p.

Research output: Contribution to journalArticle

Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

Samanta, P., Huang, H. S., Chen, S. Y. & Liu, C. H., 2014 Mar 13, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 7061072. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Lee, C. C., Liu, C. H., Hsu, H. W. & Hung, M. H., 2014 Apr 30, In : Thin Solid Films. 557, p. 311-315 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P. C., Sun, C. L., Liu, C. H., Lin, C. L., Mong, F. C., Huang, J. H. & Chang, H. S., 2013 May 1, In : Microelectronic Engineering. 109, p. 142-147 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Efficiency improvement of organic light emitting diodes with co-deposited hole blocking layer

Liu, C. H., Tseng, C. H. & Cheng, C. P., 2010 Jan 1, Diffusion in Solids and Liquids V. Trans Tech Publications Ltd, Vol. 297-301. p. 561-566 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Efficiency of dispenser with nozzle technology in assembly

Wang, M. C., Huang, K. S., Chen, S. Y., Hsieh, Z. Y., Yang, H. C., Liu, C-H. & Lin, C. R., 2010 Nov 24, Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010. p. 476-479 4 p. 5583781. (Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electrical and reliability characteristics in strained-Si mOSFETs

Yang, C. C., Pan, T. M., Chen, K. M. & Liu, C. H., 2008 Nov 17, ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 ed. p. 271-277 7 p. (ECS Transactions; vol. 13, no. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics

Liu, C. H. & Chen, H. W., 2010 May 1, In : Microelectronics Reliability. 50, 5, p. 599-602 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Chen, H. W., Chen, S. Y., Chen, K. C., Huang, H. S., Liu, C. H., Chiu, F. C., Liu, K. W., Lin, K. C., Cheng, L. W., Lin, C. T., Ma, G. H. & Sun, S. W., 2008 Jul 30, In : Applied Surface Science. 254, 19, p. 6127-6130 4 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric

Juan, P. C., Liu, C-H., Lin, C. L., Ju, S. C., Chen, M. G., Chanf, I. Y. K. & Lu, J. H., 2009 May 1, In : Japanese Journal of Applied Physics. 48, 5 PART 2

Research output: Contribution to journalArticle

11 Citations (Scopus)

Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Liu, C. H. & Chiu, F. C., 2007 Jan 1, In : IEEE Electron Device Letters. 28, 1, p. 62-64 3 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Wang, S. J., Peng, S. H., Hu, Y. M., Chen, S. Y., Huang, H. S., Wang, M. C., Yang, H. C. & Liu, C. H., 2013 May 27, p. 309-312. 4 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Huang, H. S., Samanta, P., Tzeng, T. J., Chen, S. Y. & Liu, C. H., 2012 Jan 9, In : Applied Physics Letters. 100, 2, 023501.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era

Hsieh, E. R., Wang, H. W., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2019 Jun, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T118-T119 8776515. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

ESD protection for the tolerant I/O circuits using PESD implantation

Tang, H. T. H., Chen, S. S., Liu, S., Lee, M. T., Liu, C. H., Wang, M. C. & Jeng, M. C., 2002 Mar 1, In : Journal of Electrostatics. 54, 3-4, p. 293-300 8 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Exploring the spatial concepts and abilities of indigenous Atayal elementary school students in Taiwan

Chao, J. Y., Liu, C. H. & Yao, L. Y., 2017 Feb 2, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Meen, T-H., Prior, S. D. & Lam, A. D. K-T. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 65-67 3 p. 7840233. (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., Chien, S. C. & 3 others, Loh, Y. T., Chang, Y. J. & Liou, F. T., 2002 Jan 1, 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc., p. 268-271 4 p. 996646. (IEEE International Reliability Physics Symposium Proceedings; vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., Chien, S. C. & 3 others, Loh, Y. T., Chang, Y. J. & Liou, F. T., 2002 Jan 1, In : Annual Proceedings - Reliability Physics (Symposium). p. 268-271 4 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J. & Cheng, O., 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T72-T73 7998204. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Forward gated-diode measurement of filled traps in high-field stressed thin oxides

Chen, M. J., Kang, T. K., Huang, H. T., Liu, C. H., Chang, Y. J. & Fu, K. Y., 2000 Aug 1, In : IEEE Transactions on Electron Devices. 47, 8, p. 1682-1683 2 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)