• 575 Citations
  • 13 h-Index
19972019

Research output per year

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Research Output

2019

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era

Hsieh, E. R., Wang, H. W., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2019 Jun, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T118-T119 8776515. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Integration of ARCS motivational model and it to enhance students learning in the context of atayal culture

Chao, J., Jiang, T. W., Yeh, Y. H., Liu, C. H. & Lin, C. M., 2019 Jan 1, In : Eurasia Journal of Mathematics, Science and Technology Education. 15, 11, em1771.

Research output: Contribution to journalArticle

The guideline on designing a high performance nc mosfet by matching the gate capacitance and mobility enhancement

Luo, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Chenz, O., 2019 Apr, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804688. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The understanding of gate capacitance matching on achieving a high performance NC MOSFET with sufficient mobility

Chiang, C. K., Husan, P., Lou, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H. & Chung, S. S., 2019 Jun, 2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 8782951. (2019 Silicon Nanoelectronics Workshop, SNW 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2018
Open Access

A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

Cheng, H. W., Hsieh, E. R., Huang, Z. H., Chuang, C. H., Chen, C. H., Li, F. L., Lo, Y. M., Liu, C. H. & Chung, S. S., 2018 Jul 3, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Editorial: IEDMS 2016

Liu, C. H., Cheng, C. H., Cheng, C. P. & Liou, J. J., 2018 Apr, In : Microelectronics Reliability. 83, 1 p.

Research output: Contribution to journalEditorial

Effect of contact-etch-stop-layer and Si1-xGex channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

Lee, C. C., Liu, C. H., Li, D. Y. & Hsieh, C. P., 2018 Apr 1, In : Microelectronics Reliability. 83, p. 230-234 5 p.

Research output: Contribution to journalArticle

Wide Bandgap Materials for Semiconductor Devices

Lee, K. W., Liu, C. H. & Misra, D., 2018 Dec 1, In : Microelectronics Reliability. 91, 1 p.

Research output: Contribution to journalEditorial

2017

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash with Excellent Immunity to Sneak Path

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Chen, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2017 Dec 1, In : IEEE Transactions on Electron Devices. 64, 12, p. 4910-4918 9 p., 8089812.

Research output: Contribution to journalArticle

3 Citations (Scopus)
Open Access
2 Citations (Scopus)

A novel design of P-N staggered face-tunneling TFET targeting for low power and appropriate performance applications

Hsieh, E. R., Fan, Y. C., Chang, K. Y., Liu, C. H., Chien, C. H. & Chung, S. S., 2017 Jun 7, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 7942487. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Exploring the spatial concepts and abilities of indigenous Atayal elementary school students in Taiwan

Chao, J. Y., Liu, C. H. & Yao, L. Y., 2017 Feb 2, Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Meen, T-H., Prior, S. D. & Lam, A. D. K-T. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 65-67 3 p. 7840233. (Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

First demonstration of flash RRAM on pure CMOS logic 14nm FinFET platform featuring excellent immunity to sneak-path and MLC capability

Hsieh, E. R., Kuo, Y. C., Cheng, C. H., Kuo, J. L., Jiang, M. R., Lin, J. L., Cheng, H. W., Chung, S. S., Liu, C. H., Chen, T. P., Yeah, Y. H., Chen, T. J. & Cheng, O., 2017 Jul 31, 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., p. T72-T73 7998204. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs

Hsieh, E. R., Fan, Y. C., Liu, C. H., Chung, S. S., Huang, R. M., Tsai, C. T. & Yew, T. R., 2017 Jun 13, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 130-131 2 p. 7947549. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs

Lee, C. C., Kuo, Y. T. & Liu, C. H., 2017 Nov 1, In : Materials Science in Semiconductor Processing. 70, p. 254-259 6 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Kinect augmented reality gear game design

Chen, J. Y., Liu, C. H., Hsieh, C. H., Huang, S. Y., Wang, W. K. & Nien, B. H., 2017 Jul 21, Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017. Meen, T-H., Lam, A. D. K-T. & Prior, S. D. (eds.). Institute of Electrical and Electronics Engineers Inc., p. 373-375 3 p. 7988429. (Proceedings of the 2017 IEEE International Conference on Applied System Innovation: Applied System Innovation for Modern Technology, ICASI 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2016

A case study of design and usability evaluation of the Collaborative Problem Solving Instructional Platform system

Chao, J. Y., Chao, S. J., Yao, L. Y. & Liu, C. H., 2016 Jan 1, In : Eurasia Journal of Mathematics, Science and Technology Education. 12, 10, p. 2647-2655 9 p.

Research output: Contribution to journalArticle

Open Access
3 Citations (Scopus)

Study on CPS spatial concept course and assessments for aboriginal children: With “rotation” and “mapping” as examples

Chao, J. Y., Yao, L. Y., Liu, C. H. & Chen, J. Y., 2016 Jan 1, Applied System Innovation - Proceedings of the International Conference on Applied System Innovation, ICASI 2015. Lam, A. D. K-T., Prior, S. D. & Meen, T-H. (eds.). CRC Press/Balkema, p. 735-740 6 p. (Applied System Innovation - Proceedings of the International Conference on Applied System Innovation, ICASI 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2015

A resultant stress effect of contact etching stop layer and geometrical designs of poly gate on Nanoscaled nMOSFETs with a Si1-xGex channel

Lee, C. C., Liu, C. H., Chen, Z. H. & Tzeng, T. L., 2015 Jan 1, In : Journal of Nanoscience and Nanotechnology. 15, 3, p. 2173-2178 6 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Design of complementary tilt-gate TFETs with SiGe/Si and III-V integrations feasible for ultra-low-power applications

Hsieh, E. R., Lin, Y. S., Zhao, Y. B., Liu, C. H., Chien, C. H. & Chung, S. S., 2015 Sep 24, 2015 Silicon Nanoelectronics Workshop, SNW 2015. Institute of Electrical and Electronics Engineers Inc., 7275322. (2015 Silicon Nanoelectronics Workshop, SNW 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Heat stress exposing performance of deep-nano HK/MG nMOSFETs using DPN or PDA treatment

Wang, S. J., Wang, M. C., Chen, S. Y., Lan, W. H., Yang, B. W., Huang, L. S. & Liu, C. H., 2015 Jan 1, In : Microelectronics Reliability. 55, 11, p. 2203-2207 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures

Wang, S. J., Wang, M. C., Lee, W. D., Chen, W. S., Huang, H. S., Chen, S. Y., Huang Ms, L. S. & Liu, C-H., 2015 Jan 1, In : International Journal of Nanotechnology. 12, 1-2, p. 59-73 15 p.

Research output: Contribution to journalArticle

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

Lin, K. C., Juan, P. C., Liu, C. H., Wang, M. C. & Chou, C. H., 2015 Jan 1, In : Microelectronics Reliability. 55, 11, p. 2198-2202 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Structural optimizations of silicon based NMOSFETs with a sunken STI pattern by using a robust stress simulation methodology

Lee, C. C., Liu, C-H., Cheng, H. C. & Deng, R. H., 2015 Jan 1, In : Journal of Nanoscience and Nanotechnology. 15, 3, p. 2179-2184 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)
2014

Augmented Reality in design and implementation of interactive recycling game

Chen, J. Y., Liu, C. H. & Wang, W. K., 2014 Mar 10, Environment, Energy and Sustainable Development - Proceedings of the 2013 International Conference on Frontier of Energy and Environment Engineering, ICFEEE 2013. p. 805-808 4 p. (Environment, Energy and Sustainable Development - Proceedings of the 2013 International Conference on Frontier of Energy and Environment Engineering, ICFEEE 2013; vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Wang, M. C., Wang, S. J., Huang, H. S., Chen, S. Y., Peng, M. R., Ji, L. R., Lu, M. F., Liao, W. S. & Liu, C. H., 2014 Jan 1, In : International Journal of Nanotechnology. 11, 1-4, p. 62-74 13 p.

Research output: Contribution to journalArticle

Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

Samanta, P., Huang, H. S., Chen, S. Y. & Liu, C. H., 2014 Mar 13, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 7061072. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Lee, C. C., Liu, C. H., Hsu, H. W. & Hung, M. H., 2014 Apr 30, In : Thin Solid Films. 557, p. 311-315 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Lin, K. C., Twu, M-J., Juan, P. C., Hsu, H. W., Huang, H. S., Wang, M. C. & Liu, C-H., 2014 Jan 1, In : International Journal of Nanotechnology. 11, 1-4, p. 27-39 13 p.

Research output: Contribution to journalArticle

Interactive game design of axles upon augmented reality

Chao, J. Y., Chen, J. Y., Liu, C-H., Yang, C. K. & Lu, K. F., 2014 Jan 1, p. 721-724. 4 p.

Research output: Contribution to conferencePaper

Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern

Lee, C. C., Liu, C. H., Deng, R. H., Hsu, H. W. & Chiang, K. N., 2014 Apr 30, In : Thin Solid Films. 557, p. 323-328 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Mechanical property effects of Si1 - XGex channel and stressed contact etching stop layer on nano-scaled n-type metal-oxide- semiconductor field effect transistors

Lee, C. C., Cheng, H. C., Hsu, H. W., Chen, Z. H., Teng, H. H. & Liu, C. H., 2014 Apr 30, In : Thin Solid Films. 557, p. 316-322 7 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Physically based modeling for stress assessment in MOS devices

Lee, C. C., Lin, K. C., Lin, Y. H., Lai, Y. C. & Liu, C-H., 2014 Mar 13, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 7061231

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Positive bias temperature instability in p -type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Samanta, P., Huang, H. S., Chen, S. Y., Liu, C. H. & Cheng, L. W., 2014 Feb 21, In : Journal of Applied Physics. 115, 7, 074502.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers

Wang, M. C., Huang, H. S., Peng, M. R., Wang, S. J., Chen, T. Y., Liao, W. S., Yang, H. C. & Liu, C-H., 2014 Jan 1, In : International Journal of Materials and Product Technology. 49, 1, p. 25-40 16 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

The analysis of channel stress induced by CESL in N-MOSFET

Twu, M-J., Kao, W-C., Lin, K. C., Chen, K. D., Kua, Y. T. & Liu, C-H., 2014 Jan 16, Quantum, Nano, Micro Technologies and Applied Researches. p. 235-240 6 p. (Applied Mechanics and Materials; vol. 481).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C. H., Ke, J. C., Yang, C. W. & Tsai, C. T., 2014 Sep 8, Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 6894389. (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO 2 high-k metal gate 28nm CMOS devices

Wu, P. C., Hsieh, E. R., Lu, P. Y., Chung, S. S., Chang, K. Y., Liu, C-H., Ke, J. C., Yang, C. W. & Tsai, C. T., 2014 Jan 1, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 6839679. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)
2013

Body effect of SiGe and CESL strained nano-node NMOSFETs on (100) silicon substrate

Wang, M. C., Wu, G. W., Wang, S. J., Yang, H. C., Liao, W. S., Lu, M. F., Jhang, J. Z. & Liu, C. H., 2013 May 27, p. 379-382. 4 p.

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel

Hsu, H. W., Huang, H. S., Lee, C. C., Chen, S. Y., Teng, H. H., Peng, M. R., Wang, M. C. & Liu, C-H., 2013 Dec 1, In : Journal of Nanoscience and Nanotechnology. 13, 12, p. 8127-8132 6 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

Juan, P. C., Sun, C. L., Liu, C. H., Lin, C. L., Mong, F. C., Huang, J. H. & Chang, H. S., 2013 May 1, In : Microelectronic Engineering. 109, p. 142-147 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Wang, S. J., Peng, S. H., Hu, Y. M., Chen, S. Y., Huang, H. S., Wang, M. C., Yang, H. C. & Liu, C. H., 2013 May 27, p. 309-312. 4 p.

Research output: Contribution to conferencePaper

3 Citations (Scopus)

High Quality of 0.18μm CMOS 5.2GHz cascode LNA for RFID tag applications

Yang, H. C., Peng, S. H., Wang, S. J., Wang, M. C., Lian, C. W., Yang, J. M., Chin, H. I. & Liu, C-H., 2013 May 27, p. 313-316. 4 p.

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

Hsu, H. W., Huang, H. S., Chen, S. Y., Wang, M. C., Li, K. C., Lin, K. C. & Liu, C-H., 2013 Mar 13, Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. p. 89-90 2 p. 6465962. (Proceedings - Winter Simulation Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths

Hsu, H. W., Lin, K. C., Lee, C. C., Twu, M-J., Huang, H. S., Chen, S. Y., Peng, M. R., Teng, H. H. & Liu, C-H., 2013 Oct 1, In : Thin Solid Films. 544, p. 120-124 5 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Wang, M. C., Jhang, J. Z., Wang, S. J., Yang, H. C., Liao, W. S., Lu, M. F., Wu, G. W. & Liu, C. H., 2013 May 27, ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013. p. 375-378 4 p. 6512371

Research output: Chapter in Book/Report/Conference proceedingConference contribution