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INIS
oxides
100%
metals
73%
dielectrics
70%
semiconductor materials
62%
layers
61%
devices
61%
performance
48%
field effect transistors
42%
interfaces
34%
traps
33%
mosfet
33%
voltage
33%
reliability
32%
thickness
31%
films
29%
breakdown
28%
surfaces
26%
silicon
26%
comparative evaluations
25%
carriers
25%
power
24%
capacitors
24%
design
23%
leakage current
22%
germanium silicides
22%
plasma
21%
applications
21%
instability
19%
doped materials
18%
annealing
18%
simulation
16%
substrates
16%
transistors
16%
charges
16%
mobility
16%
electrical properties
15%
nitridation
14%
electrons
14%
schools
12%
silicon oxides
12%
control
12%
learning
11%
thin films
11%
quantum dots
11%
ferroelectric materials
10%
strains
10%
etching
10%
holes
10%
width
10%
length
10%
Material Science
Dielectric Material
61%
Metal-Oxide-Semiconductor Field-Effect Transistor
49%
Oxide Compound
32%
Film
26%
Capacitor
24%
Metal Oxide
20%
Oxide Semiconductor
20%
Electrical Property
19%
Density
18%
Silicon
18%
Oxide Thickness
18%
Hot Carrier
17%
Nitriding
14%
Transistor
13%
Silicate
13%
Ferroelectric Material
10%
Negative-Bias Temperature Instability
10%
Type Metal
10%
Annealing Temperature
10%
Hafnium
9%
Quantum Dot
9%
Electrical Breakdown
8%
Zirconia
8%
Field Effect Transistor
8%
Thin Films
8%
X-Ray Diffraction
8%
Annealing
8%
Permittivity
7%
Capacitance
7%
Electronic Circuit
7%
Interface Property
6%
Lanthanum
6%
Polystyrene
6%
Mechanical Property
6%
Carrier Mobility
6%
Germanium
5%
Alloy
5%
Surface Plasmon
5%
Silicon Substrate
5%
Engineering
Gate Dielectric
40%
Metal-Oxide-Semiconductor Field Effect Transistor (Mosfets)
30%
Metal-Oxide-Semiconductor Field-Effect Transistor
27%
Dielectrics
23%
Metal Oxide Semiconductor
19%
Interface Trap
16%
Nodes
13%
Tensiles
12%
Oxide Thickness
12%
Transistor
12%
Gate Oxide
11%
Induced Stress
11%
Negative bias temperature instability
10%
Device Performance
10%
Channel Length
9%
Experimental Result
9%
Current Drive
7%
Engineering Strain
7%
Silicon Dioxide
7%
Shallow Trench Isolation
7%
Interface State
6%
Gate Width
6%
Field-Effect Transistor
6%
Gate Voltage
6%
Current Drain
6%
Channel Region
5%
Temperature Dependence
5%
Layer Thickness
5%
Polysilicon
5%
Electrical Performance
5%
Carrier Mobility
5%
Atomic Layer Deposition
5%
