• 639 Citations
  • 14 h-Index
19972019

Research output per year

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Research Output

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y. & Chang, C., 2019 Dec, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993581. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era

    Hsieh, E. R., Wang, H. W., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Cheng, O., 2019 Jun, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T118-T119 8776515. (Digest of Technical Papers - Symposium on VLSI Technology; vol. 2019-June).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • Integration of ARCS motivational model and it to enhance students learning in the context of atayal culture

    Chao, J., Jiang, T. W., Yeh, Y. H., Liu, C. H. & Lin, C. M., 2019 Jan 1, In : Eurasia Journal of Mathematics, Science and Technology Education. 15, 11, em1771.

    Research output: Contribution to journalArticle

  • The guideline on designing a high performance nc mosfet by matching the gate capacitance and mobility enhancement

    Luo, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J. & Chenz, O., 2019 Apr, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804688. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • The understanding of gate capacitance matching on achieving a high performance NC MOSFET with sufficient mobility

    Chiang, C. K., Husan, P., Lou, Y. C., Li, F. L., Hsieh, E. R., Liu, C. H. & Chung, S. S., 2019 Jun, 2019 Silicon Nanoelectronics Workshop, SNW 2019. Institute of Electrical and Electronics Engineers Inc., 8782951. (2019 Silicon Nanoelectronics Workshop, SNW 2019).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution