INIS
asymmetry
9%
barriers
27%
buffers
9%
cadmium selenides
9%
cladding
9%
comparative evaluations
6%
concentration dependence
9%
crystal growth
9%
density
6%
doped materials
20%
education
9%
effective mass
7%
electric fields
37%
emission
6%
energy
39%
energy gap
11%
energy-level transitions
8%
excitation
7%
excitons
9%
gallium arsenides
100%
increasing
8%
interfaces
25%
investigations
9%
layers
29%
learning
9%
liquid phase epitaxy
9%
microstructure
18%
modulation
10%
molecular beam epitaxy
9%
nanocrystals
9%
optical properties
36%
oscillations
32%
peaks
18%
pentacene
9%
photoluminescence
29%
quantum dots
27%
quantum wells
56%
resonance
8%
silver
9%
space charge
10%
spectra
51%
spectroscopy
17%
strains
10%
substrates
9%
surfaces
13%
temperature dependence
8%
temperature range 0273-0400 k
7%
thin films
10%
tunneling
9%
zinc selenides
20%
Chemistry
Ambient Reaction Temperature
6%
Band Gap
10%
Buffer Solution
9%
Concentration
9%
Crystal Growth
9%
Density
10%
Doping
19%
Electric Field
37%
Electrolyte
9%
Energy
47%
Group
6%
Interband Transition
13%
Intrathoracic
9%
Lineshape
15%
Microstructure
18%
Optical Property
31%
Oscillation
27%
Pentacene
9%
Photoluminescence
20%
Photoluminescence Spectrum
7%
Quantum Dot
27%
Reaction Temperature
51%
Silver
9%
Space Charge
10%
Spectra
53%
Spectroscopy
15%
Strain
9%
Structure
43%
Subband
30%
Surface
13%
Thickness
6%
Thin Film Structure
9%
Wave Function
9%
Wetting
5%
Physics
Approximation
6%
Cladding
9%
Concentration Dependence
9%
Confinement
12%
Crystal Growth
9%
Electric Fields
35%
Electromagnetic Interaction
9%
Gaps
21%
Growth
9%
Model
11%
Multiple Quantum Well
9%
Nanocrystal
9%
Optical Properties
33%
Optical Transition
16%
Oscillation
23%
Photoluminescence
20%
Quantum Dot
18%
Quantum Wells
57%
Reflectance
7%
Region
15%
Resonant Tunneling
9%
Responses
12%
Ripples
6%
Room Temperature
6%
Sides
12%
Space Charge
14%
Spectra
45%
Spectrometer
20%
Spectroscopy
21%
Substrates
9%
Temperature
33%
Transferring
15%
Value
18%
Wave Function
13%
Wetting
5%
