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INIS
gallium arsenides
100%
spectra
63%
quantum wells
55%
layers
43%
energy
36%
photoluminescence
34%
electric fields
34%
optical properties
33%
quantum dots
30%
barriers
28%
oscillations
27%
interfaces
24%
strains
21%
modulation
18%
doped materials
17%
spectroscopy
17%
zinc selenides
17%
investigations
17%
peaks
15%
microstructure
15%
learning
15%
quantum states
14%
comparative evaluations
11%
wave functions
11%
surfaces
11%
space charge
11%
resonance
10%
values
10%
buffers
10%
growth
9%
energy gap
9%
energy-level transitions
9%
temperature dependence
8%
thin films
8%
range
8%
pentacene
7%
cladding
7%
concentration dependence
7%
excitons
7%
silver
7%
tunneling
7%
substrates
7%
cadmium selenides
7%
liquid phase epitaxy
7%
asymmetry
7%
molecular beam epitaxy
7%
nanocrystals
7%
crystal growth
7%
education
7%
pulses
7%
Engineering
Gallium Arsenide
50%
Quantum Well
38%
Photoreflectance
26%
Low-Temperature
15%
Internal Electric Field
14%
Energy Transition
13%
Quantum State
12%
Buffer Layer
10%
Optical Transition
9%
Cylindrical Rod
7%
Cladding Layer
7%
Electric Field
7%
Effective Mass Approximation
7%
Superlattice
7%
Harmonic Component
7%
Growth Temperature
7%
Gaas Substrate
7%
Boil-off
7%
Substrate Interface
7%
Doped Gaas
7%
Quantum Dot
7%
Space Charge Region
7%
Spectral Feature
7%
Internal Field
6%
Band Gap Energy
6%